Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

MEMS压力传感器上柔性化凸点制备方法

介绍了一种适用于MEMS压力传感器的低成本、柔性化凸点下金属层(Under Bump Metal,UBM)和凸点(Bump)的制备工艺。其中凸点下金属层分为Ni-P/Cu两层,使用化学镀的方法沉积在Al焊盘表面;凸点通过焊膏印刷回流预制于陶瓷基片上,再通过转移工艺移植到焊盘上。为了检验此套工艺制出的凸点结构是否具有足够的强度,对凸点进行了剪切破坏试验。结果表明,凸点与凸点下金属层、凸点下金属层与Al焊盘均结合牢固,破坏主要发生在焊料凸点内最薄弱的金属间化合物层(Intermetallic Compound,IMC)。     

化学镀Ni-P在纯锡凸点的应用及界面研究

采用化学镀Ni-P作UBM阻挡层,利用电镀的方法制备了面阵列和周边排布的无铅纯锡凸点,凸点高度为85±2μm,一致性良好。研究了不同回流温度下纯锡焊球的剪切强度、断裂模式和与Ni-P层反应生成的金属间化合物。结果表明,纯锡凸点回流时与Ni-P生成针状Ni3Sn4,凸点剪切强度达到92MPa以上。剪切断裂为韧性断裂,随着回流温度提高及回流时间延长,Ni3Sn4相由针状向块状转变,Ni-P层与Ni3Sn4层间生成层状Ni3P相,粗化的Ni3Sn4相受压应力向焊球内部脱落。     

圆片级封装的凸点制作技术

圆片级封装是一种先进的电子封装技术,近年来,圆片级封装技术的发展速度很快,主要应用于系统级芯片、光电器件和MEMS等.凸点制作是圆片级封装工艺的关键工序,目前凸点制作工艺方法有多种,重点介绍常用的电镀法、植球法和蒸发沉积法凸点工艺,分别介绍这三种凸点制作技术的工艺流程、关键技术.     

Novel Maskless Bumping for 3D Integration

A novel, maskless, low‐volume bumping material, called solder bump maker, which is composed of a resin and low‐melting‐point solder powder, has been developed. The resin features no distinct chemical reactions preventing the rheological coalescence of the solder, a deoxidation of the oxide layer on the solder powder for wetting on the pad at the solder melting point, and no major weight loss caused by out‐gassing. With these characteristics, the solder was successfully wetted onto a metal pad and formed a uniform solder bump array with pitches of 120 µm and 150 µm.     

波箔气体轴承温度场计算与动静态性能分析

为计算波箔轴承的温度场分布,研究轴承的热特性,推导了考虑外部冷却条件时的平箔片内表面等效对流换热系数,将箔片一侧的导热换热模型耦合到气膜三维能量传递模型中.建立轴承套、转子的导热与对流换热模型,耦合求解非等温Reynolds方程、气膜能量传递方程、箔片变形方程.计算并分析轴承转速、载荷、外部冷却气流等因素对轴承温度的影响,分析了轴承的静动态性能.结果表明:转速对轴承温度影响很大,温度随载荷变化不大,冷却空气的冷却效率随流量增大逐渐降低.与等温条件相比,非等温模型的轴承承载能力较大,且具有较大的动态刚度与阻尼.     

深井高应力难采煤层上行卸压开采的研究与实践

以新汶矿区为工程背景,深入研究了采动覆岩裂隙亚分带特征、覆岩运动与结构分带特征、上行卸压开采作用效应,建立了上行卸压开采可行程度的评价方法,论证了深井复合顶板煤层上行卸压开采的可行程度,通过应用实践根除了深井高应力难采煤层的多重障碍,为上行卸压开采的可行程度判别、区域划分、开采部署提供了决策依据.     

波箔动压气体轴承建模中典型摩擦模型的对比分析

波箔动压气体轴承箔片结构中的摩擦直接决定了其等效刚度和阻尼特性,进而影响轴承性能。对比分析了全耦合求解框架系统建模中常用的LuGre动态摩擦模型和平滑近似代数摩擦模型在程序实现、稳态特性以及性能预测方面的差异,结果表明：LuGre动态摩擦模型可以准确地表征黏着状态,预测结果准确,且计算效率较高,但会增加系统自由度,导致程序实现复杂;平滑近似代数摩擦模型不会增加系统自由度,程序实现简单,且在低速准静态或低摩擦因数、大扰动等以滑移为主的工况下预测结果准确,但由于无法准确表征黏着状态,在高摩擦因数、小扰动等以黏着为主的工况下预测结果偏差较大,且计算效率较低。     

煤矿深部开采煤岩动力灾害防控理论基础与关键技术

煤岩层赋存条件决定了煤矿深部开采条件下煤岩动力灾害的发生机理更趋复杂、防控难度显著增大,如何解决煤矿深部开采煤岩动力灾害防控问题,直接影响我国煤矿的安全生产和能源的有效供给。 针对“煤矿深部开采煤岩动力灾害防控技术研究”这一科学命题,基于冲击地压“三因素”机理和煤与瓦斯突出的综合作用假说,从煤岩动力灾害防控理论基础、关键技术和防控实践等3个方面,梳理澄清了煤矿煤岩动力灾害防控中的一些模糊概念,建立了用于统一描述冲击地压和煤与瓦斯突出发生机理的广义“三因素”(“物性因素”、“应力因素”及“结构因素”)理论,确定了我国煤矿典型冲击地压的4种类型(煤层材料失稳型、煤层结构失稳型、顶板断裂型、断层滑移错动型),分析了影响冲击地压和煤与瓦斯突出的主要因素,从思想认知、原则方法及技术核心等方面凝练了煤岩动力灾害多尺度分源防控技术,提出了深部开采冲击地压巷道“3级”吸能支护思想与成套技术,开发了煤与瓦斯突出井上下联合抽采防控技术和超高压水射流“横切纵断”防治复合煤岩动力灾害技术,并在现场开展了应用试验。 煤矿深部开采煤岩动力灾害防控理论与关键技术的建立与完善,为我国今后煤矿煤岩动力灾害的防治提供了科学依据。     

Electrochemical analysis of zincate treatments for Al and Al alloy films

Electrochemical behavior of Al and Al alloy films in zincate solution was investigated to elucidate the effect of the zincate pretreatment for electroless NiP deposition, which is used for under bump metallization for LSI interconnects. The immersion potential for AlCu and AlSiCu, immediately reached to constant, which was almost equal potential to zinc reference electrode. The corrosion current for the AlCu and AlSiCu films was larger than that of the Al and AlSi films in the zincate solution. It was also confirmed that the deposited Zn at the surface of AlCu and AlSiCu films possessed smaller grain size and larger amount of nucleation, resulted in the formation of flat NiP films.