化学镀Ni-P在纯锡凸点的应用及界面研究

采用化学镀Ni-P作UBM阻挡层,利用电镀的方法制备了面阵列和周边排布的无铅纯锡凸点,凸点高度为85±2μm,一致性良好。研究了不同回流温度下纯锡焊球的剪切强度、断裂模式和与Ni-P层反应生成的金属间化合物。结果表明,纯锡凸点回流时与Ni-P生成针状Ni3Sn4,凸点剪切强度达到92MPa以上。剪切断裂为韧性断裂,随着回流温度提高及回流时间延长,Ni3Sn4相由针状向块状转变,Ni-P层与Ni3Sn4层间生成层状Ni3P相,粗化的Ni3Sn4相受压应力向焊球内部脱落。     

圆片级封装的凸点制作技术

圆片级封装是一种先进的电子封装技术,近年来,圆片级封装技术的发展速度很快,主要应用于系统级芯片、光电器件和MEMS等.凸点制作是圆片级封装工艺的关键工序,目前凸点制作工艺方法有多种,重点介绍常用的电镀法、植球法和蒸发沉积法凸点工艺,分别介绍这三种凸点制作技术的工艺流程、关键技术.     

Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

MEMS压力传感器上柔性化凸点制备方法

介绍了一种适用于MEMS压力传感器的低成本、柔性化凸点下金属层(Under Bump Metal,UBM)和凸点(Bump)的制备工艺。其中凸点下金属层分为Ni-P/Cu两层,使用化学镀的方法沉积在Al焊盘表面;凸点通过焊膏印刷回流预制于陶瓷基片上,再通过转移工艺移植到焊盘上。为了检验此套工艺制出的凸点结构是否具有足够的强度,对凸点进行了剪切破坏试验。结果表明,凸点与凸点下金属层、凸点下金属层与Al焊盘均结合牢固,破坏主要发生在焊料凸点内最薄弱的金属间化合物层(Intermetallic Compound,IMC)。     

一种用于MEMS器件的Au-In倒装焊技术

介绍了Au-In键合在MEMS芯片封装中的应用.根据现有的工艺设备和实验条件对制备铟凸点阵列进行工艺设计,对铟凸点制备技术进行了研究,最终在硅圆片上制备了6 μm高的铟凸点阵列.在150～300℃下成功的进行了Au-In倒装键合实验.在300℃,0.3 MPa压力下键合的剪切强度达到了5 MPa.     

热超声倒装焊在制作大功率GaN基LED中的应用

设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上.测试结果表明获得的大面积金凸点连接的剪切力最高达53.93 g/bump,焊接后的GaN基绿光LED在350 mA工作电流下正向电压为3.0 V.将热超声倒装焊接技术用于制作大功率GaN基LED器件,能起到良好的机械互连和电气互连.     

Thermosonic bonding of lead-free solder with metal bump for flip-chip bonding

While extensive research on the lead-free solder has been conducted, the high melting temperature of the lead-free solder has detrimental effects on the packages. Thermosonic bonding between metal bumps and lead-free solder using the longitudinal ultrasonic is investigated through numerical analysis and experiments for low-temperature soldering. The results of numerical calculation and measured viscoelastic properties show that a substantial amount of heat is generated in the solder bump due to viscoelastic heating. When the Au bump is thermosonically bonded to the lead-free solder bump (Sn-3%Ag-0.5%Cu), the entire Au bump is dissolved rapidly into the solder within 1 sec, which is caused by the scrubbing action of the ultrasonic. More reliable solder joints are obtained using the Cu/Ni/Au bump, which can be applied to flip-chip bonding.     

现代微光电子封装中的倒装焊技术

结合我们设计制作的倒装焊光电子器件—智能像素面阵 ,对倒装焊的工艺过程作了简要的介绍。该面阵采用铟做凸点材料 ,制作了输入输出数达 6 4× 6 4的凸点电极阵列 ,并采用回流焊的方式 ,将光电调制器面阵与对应的处理电路芯片对准后加热回流实现焊接 ,形成输入输出引线间距只有 80 μm的面阵器件     

Novel Maskless Bumping for 3D Integration

A novel, maskless, low‐volume bumping material, called solder bump maker, which is composed of a resin and low‐melting‐point solder powder, has been developed. The resin features no distinct chemical reactions preventing the rheological coalescence of the solder, a deoxidation of the oxide layer on the solder powder for wetting on the pad at the solder melting point, and no major weight loss caused by out‐gassing. With these characteristics, the solder was successfully wetted onto a metal pad and formed a uniform solder bump array with pitches of 120 µm and 150 µm.     

机床液压系统中泵站的CAD研究

介绍了机床液压系统泵站计算机辅助设计的实现方法,包括元件选择、生成装配图、变参零件图及明细表等．