水量还原方法及合理性检查

文中详细地阐述了取河水、井水、水库水、跨流城引(排)水等不同情况进行还原的具体方法步骤。并对水量还原成果提出合理性检查措施。     

透水坡面降雨径流过程的运动波近似解析解

本文从坡面流运动波理论的基本方程出发，利用运动波特征线法和分级叠加法，推导出了实验条件下考虑净雨强随时间变化的坡面流运动波方程近似解析解。用实验实测资料对模拟计算结果进行了验证。结果表明，坡面漫流过程的模拟计算结果与实测资料符合良好。     

光折变三维信息存储器

分析光折变三维存储器的机理,探讨了光折变三维存储器的编码方式、光折变材料的选择及存储技术,阐述了其产业化进程.     

Computational analysis of thin coating layer failure using a cohesive model and gradient plasticity

Thermal barrier coatings (TBC) are widely used to prevent transient high temperature attack and allow components high durability. Due to strong inhomogeneous material properties the TBC failure often initiates near the interface between the brittle oxide layer and the ductile substrate. A reliable prediction of the TBC failure requires detailed information about the crack tip field and the consequent fracture criteria. In the present paper both cohesive model and gradient plasticity are used to simulate the failure process and to study interdependence of the interface stress distribution with the specific fracture energies. Computations confirm that combination of the two models is able to simulate different failure mechanisms in the TBC system. The computational model has the potential to give a realistic prediction of the crack propagation process.     

一种新型的多功能照相胶片影像质量评价方法

本设计了一种新型的多功能照相胶片感光性能和影像质量评价方法。这种方法的主要特点的快速、方便并有满足 实用要求的精确度。该方法仅使用一个测试标板，就可以很容易地测定出照相胶片的感光性能、分辨率、均方根粒度和密度振幅响应（DAR）值等多种表征影像质量的参数。本简要介绍该方法并给出试验结果及其与传统测试方法的比较和讨论意见。     

普通稠油油藏启动压力梯度求解方法与应用

利用微观尺度管流模型,结合普通稠油流变特征,提出了在考虑稠油流变性条件下微观启动压力梯度计算方法.对渤海渤中18块不同渗透率岩心进行室内驱替实验,通过对实验数据的回归分析,得到不同粘度普通稠油油藏启动压力梯度与地层平均渗透率关系,并绘制了启动压力梯度的图版.将研究结果应用于普通稠油油藏,给出了利用启动压力梯度确定极限泄油半径及合理井距的理论计算方法.     

玻璃纤维布内中空纤维丝的检测

介绍了玻璃纤维布内中空纤维丝的检测方法。     

Ku波段波导型双工器的研制

采用高精度的模式匹配法设计了一种Ku波段波导型双工器。双工器采用H面T接头和E面横向膜片波导带通滤波器。采用该方法设计的双工器精度高，结构简单，便于加工。文中也将理论结果和实测数据进行了比较，两者吻合得很好，证明了模式匹配法的精确性和有效性。     

具有控制项的限定记忆卡尔曼滤波器

在已有的限定记忆卡尔曼滤波器的基础上 ,将确定性先验信息作为控制项加以应用 ,推导出了完整的限定记忆卡尔曼滤波公式 ,从而在记忆长度确定的情况下 ,有效地减小了模型不准的误差 ,降低了滤波总误差。仿真同样表明了该方法的有效性     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.