1100℃以上高温连铸板坯表面缺陷的模拟在线无损检测

高温状态下连铸板坯表面缺陷的在线无损检测在现代化的连铸坯热送－直轧工艺中对于保证铸坯的质量有着极其重要的意义。本文介绍了连铸坯高温探伤技术和相应的试验装置。采用涡流方法成功地模拟了１１００℃以上铸坯表面缺陷的动态检测，所用探头及检测设备均可在高温状态下长时间连续工作，能检测出深度为１．５ｍｍ，宽度为０．３ｍｍ，长为１０ｍｍ的表面缺陷，并能有效地抑制铸坯表面振动斑痕所产生的噪声影响。借助于计算机信号     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

A new precipitate phase in Al-4wt. % Cu thin-film interconnects

We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al₂Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.     

Rapid analysis of polymer homologues and additives with SFE/SFC-MS coupling

A rapid and easy analysis method for polymers is presented. The method involves sample preparation by SFE, separation of the extracted compounds by SFC and simultaneous quantitative detection by FID, as well as identification of unknowns by MS. The applications illustrate how structural research work and routine polymer analysis can be done with this time saving method.     

CP-3助剂在嘴棒成型纸中的应用

介绍CP - 3助剂的特性、用法以及在嘴棒纸中的作用。     

硼酸使掺铁铝酸锂发光增强的现象

在硼酸存在下合成了掺铁铝酸锂荧光体,研究了在不同温度下硼酸加入量对荧光体发光强度的影响,并通过X射线粉末衍射和粒度分析,初步探讨了发光增加的原因。     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

树脂热解炭制备碳化硅晶须

用自制的配合醛树脂热解和炭源，用ＳＩＯ２超细汾作原，根据碳热还原原理，利用常规加热和微波加热两种方式，分别制备了直径在纳米级的ＳｉＣ晶须，Ｘ射线衍射、透射电检测结果表明：制备工艺和条件对ＳｉＣ晶须的性质有较大的影响。