球化退火态钢脱碳层深度的金相法测定

论述了国内外金相测定球化退火钢脱碳层深度的标准方法和常用方法存在的不准确性和不适用性问题,提出了解决问题的途径——定量金相法。     

镨掺杂分布对1.3μm光纤放大器特性影响

对掺氟化镨玻璃光纤放大器的小信号增益，用广义的高斯近似公式可获得精确的分析表达。文中研究了限制光纤芯层中央部分的镨掺杂对光纤放大器特性的影响，结果发现限制镨掺杂分布能改进光纤放大器的工作效率，且截止波长比芯层全部均匀掺镨的光纤更长。     

二维无机功能材料

简要介绍了一种通过层状结构材料剥离成单分子层的无机二维功能材料。     

STN—LCD的新进展

STN-LCD采用新的取向层,消除了残象;采用新的驱动波形,消除了串扰;采用二(口恶)烷、卤化物、链烯基、醚和二苯乙炔,改进了液晶料材的性能,使STN-LCD获得高的对比度、快的响应速度、低的驱动电压;采用有源矩阵驱动方法,消除了帧响应,使STN-LCD获得高的对比度、高的亮度及视频响应速度;使用温度跟踪电路,自动跟踪STN-LCD的阀值电压,使STN-LCD获得宽的工作温度。     

太阳能热水器内表面电刷镀锌

用电刷镀的方法,对尺寸为2000mm×1000mm×0.8mm 的 A_3钢板电刷镀锌保护层;并对影响镀锌层质量的因素进行了充分的研究。     

挟沙水流中沙粒对底壁湍流猝发的影响

本文在常规的边界层方程中保留了法向压力梯度项和增加了固粒对流体的使用项，结合Ｂａｔｃｈｅｏｌｒ对交界面提供的分析方法和小扰动稳定性理论，由理论分析和计算得到了包括沙粒之类的悬浮体的尺寸，比重，流动Ｒｅ数，两相速度差以及扰动波数与水流底壁湍流猝发角的关系，计算结果与Ｒａｓｈｉｄｉ等的实验结果相符。文中所得结果有助于进一步了解江河底部水流的流动特性以及泥沙的沉积和输运机理。     

用发展的Sachs法研究模拟轧辊中的残余应力

对不同辊型，尺寸，材料与加工处理方法的模拟冷轧辊进行了内剥层试验研究，求出了原辊和打中心孔或扩孔后辊内残余应力分布曲线，提出了虚拟打孔法和虚拟剥层法，解决了实心辊中心和空心辊内表层的残余应力的精确测量问题，丰富了Ｓａｃｈｓ内剥层法的内容，机械法打中心孔，热处理前打中心孔，空心辊表淬前改变温度场的方法可降低残余应力值，后者降低残余应力的效果尤为显著。     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

用层次分析法(AHP)确定煤和瓦斯突出中的有关参数

介绍了井下瓦斯突出的原因 ,详细阐述了瓦斯突出的有关参数的确定方法。