Electrocatalytic Reduction of CO2 to Ethylene by Molecular Cu‐Complex Immobilized on Graphitized Mesoporous Carbon

The electrochemical reduction of carbon dioxide (CO₂) to hydrocarbons is a challenging task because of the issues in controlling the efficiency and selectivity of the products. Among the various transition metals, copper has attracted attention as it yields more reduced and C2 products even while using mononuclear copper center as catalysts. In addition, it is found that reversible formation of copper nanoparticle acts as the real catalytically active site for the conversion of CO₂ to reduced products. Here, it is demonstrated that the dinuclear molecular copper complex immobilized over graphitized mesoporous carbon can act as catalysts for the conversion of CO₂ to hydrocarbons (methane and ethylene) up to 60%. Interestingly, high selectivity toward C2 product (40% faradaic efficiency) is achieved by a molecular complex based hybrid material from CO₂ in 0.1 m KCl. In addition, the role of local pH, porous structure, and carbon support in limiting the mass transport to achieve the highly reduced products is demonstrated. Although the spectroscopic analysis of the catalysts exhibits molecular nature of the complex after 2 h bulk electrolysis, morphological study reveals that the newly generated copper cluster is the real active site during the catalytic reactions.     

The origin of the modulated structure in Sr2CuO3+δ (δ = 0.4): [CuO2] in-plane oxygen vacancy or apical oxygen vacancy?

We propose the question of the modulated structures of copper oxide is caused by the [CuO₂] in-plane oxygen vacancy or apical oxygen vacancy. Sr₂CuO_3+δ single-crystal samples were prepared using high-temperature and high-pressure methods. The major phase of Sr₂CuO_3+δ (δ = 0.4) single-crystal system is found to be constituted by the 5 a modulated structure with the Fmmm space group, which originates from the [CuO₂] in-plane oxygen vacancy appearing in octahedral Cu-O. Besides, the presence of the [CuO₂] in-plane oxygen vacancy may obliterate the superconductivity of the system. Experimental results deduce that the oxygen vacancy may appear in the apical oxygen sites in high-temperature copper oxide superconductors.     

轧制始极片

本文介绍了轧制法生产始极片的工艺，比较了轧制法和传统的钛种板生产始极片的优缺点，讨论了采用轧制始极片的经济效益和应用前景。     

中国首例缓倾铋铜金矿脉--曙光(小西南岔)铜金矿床研究新进展

据现场深入研究，结合多年生产实践，首次系统地描述了小西南岔矿床北山矿段缓倾斜铋铜金支矿脉的地质产状、规模、铜和金品位、自然铋与自然金的交生关系。在此基础上，进一步阐述了缓倾铋铜金矿脉对理论、应用研究及矿山确保铜和金入选品位的重要意义。     

甲磺酸铜催化合成草酸二异戊酯

制备了甲磺酸铜催化剂,对其结构进行了IR和热重分析,并用于催化草酸和异戊醇的酯化反应。结果表明,甲磺酸铜具有催化活性高、稳定,易分离,重复使用性能优良,对环境友好的特点。最佳酯化工艺条件为:n(异戊醇):n(草酸)=2．8:1,w(甲磺酸铜)=0．3％,以过量的异戊醇为带水剂,回流反应2．0 h,酯化率可达到96．8％。     

Cu基络合物催化甲醇液相氧化羰化反应

针对甲醇液相氧化羰基化法合成碳酸二甲酯(DMC)工艺,开发了新型Cu基络合催化剂(CuB rnLm)。对CuB rnLm催化剂的活性及其稳定性进行了研究。实验结果表明,采用该催化剂,甲醇转化率和DMC选择性较高;元素价态和物质结构分析表明,CuB rnLm催化剂循环使用5次后仍保持较好的稳定性。采用正交设计和中心响应曲面法设计实验,并使用S tatistica软件进行统计分析,寻求出反应的主要影响因素,并得到优化的工艺条件:反应温度100~110℃、反应压力3.0~3.5M Pa、反应时间4~6h、CuB rnLm催化剂质量浓度(以甲醇的体积计)0.15~0.20g/mL。在此工艺条件下,甲醇转化率可达23%以上,DMC的选择性为96%~98%。     

流变仪在覆铜板工序中的应用

本文简要叙述利用流变仪对覆铜箔层压板生产工序中的胶液和半固化片参数进行控制,从而更好地保证胶液和 半固化片性状的一致性,以有利于控制板材流胶和品质。     

Cu-Mg/Al_2O_3催化乙醇和乙二胺合成N-乙基乙二胺

在固定床反应器内,乙醇和乙二胺经分子间催化胺化反应合成了N-乙基乙二胺(NEED),考察了一系列铜系催化剂的活性,并筛选出催化性能较好的Cu-Mg/A l2O3催化剂;通过X射线衍射和透射扫描电子显微镜方法表征了助剂Mg对Cu/A l2O3催化剂的改性作用;考察了助催化剂Mg含量、反应温度、反应压力、进料量和乙二胺含量等对Cu-Mg/A l2O3催化剂性能的影响。实验结果表明,Cu-Mg/A l2O3催化剂具有很好的活性和选择性;在200℃、3.0MPa、质量分数20%的乙二胺乙醇溶液、进料量1.0mL/m in的条件下,乙二胺的转化率为71.56%,产物NEED的选择性和收率分别为92.62%和69.86%;经过20 d的连续使用表明,Cu-Mg/A l2O3催化剂具有良好的稳定性。     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.