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81.
PbNb2O6基压电陶瓷的高温介电性能研究   总被引:5,自引:0,他引:5  
周静  赵然  陈文 《陶瓷学报》2005,26(3):202-205
本文在PbNb2O6基础上采用Ba^2+取代Pb^2+离子,并通过添加Cr2O3、Y2O3、Sm2O3、Nd2O3和CeO2等氧化物进行掺杂改性,研究不同掺杂剂对PbNb2O6陶瓷材料结构的影响,寻找提高压电性能及居里温度的途径.试验结果表明,掺杂后的偏铌酸铅显微结构发生了变化,适量的掺杂可获得压电性能和工艺稳定性能很好,且居里温度较高(420℃~600℃)的改性PbNb2O6系压电陶瓷,可分别满足350℃和500℃以上高温应用环境的要求.  相似文献   
82.
To synthesize new functional poly(urethane‐imide) crosslinked networks, soluble polyimide from 2,2′‐bis(3,4‐dicarboxyphenyl) hexafluoropropane dianhydride, 4,4′‐oxydianiline, and maleic anhydride and polyurethane prepolymer from polycaprolactone diol, tolylene 2,4‐diisocyanate and hydroxyl ethyl acrylate were prepared. Poly(urethane‐imide) thin films were finally prepared by the reaction between maleimide end‐capped soluble polyimide (PI) and acrylate end‐capped polyurethane (PU). The effect of polyurethane content on dielectric constant, residual stress, morphology, thermal property, and mechanical property was studied by FTIR, prism coupler, Thin Film Stress Analyzer (TFSA), XRD, TGA, DMTA, and Nano‐indentation. Dielectric constant of poly(urethane‐imide) thin films (2.39–2.45) was lower than that of pure polyimide (2.46). Especially, poly(urethane‐imide) thin films with 50% of PU showed lower dielectric constant than other poly(urethane‐imide) thin films did. Lower residual stress and slope in cooling curve were achieved in higher PU content. Compared to typical polyurethane, poly(urethane‐imide) thin films exhibited better thermal stability due to the presence of the imide groups. The glass transition temperature, modulus, and hardness decreased with increase in the flexible PU content even though elongation and thermal expansion coefficient increased. Finally, poly(urethane‐imide) thin films with low residual stress and dielectric constant, which are strongly affected by the morphological structure, chain mobility, and modulus, can be suggested to apply for electronic devices by variation of PU. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 113–123, 2006  相似文献   
83.
E. Ito  K. Tajima  Y. Kobayashi 《Polymer》1983,24(7):877-882
This study was undertaken to elucidate the state of a polymer in the amorphous state through a change of motion of the molecular chain caused by heat treatment below the glass transition temperature. From dielectric measurements of amorphous poly(ethylene terephthalate) heat-treated below Tg, it was found that the average relaxation time, the distribution of relaxation time and the dielectric strength increase with increase of heat treatment. From these results, it was concluded that the amorphous state becomes more random by heat treatment.  相似文献   
84.
利用微波介电检测技术,测得还原增感立方体氯化银乳剂中自由光电子与浅束缚光电子衰减行为随还原增感温度的变化。实验发现还原增感温度变化会引起增感中心陷阱作用的变化:当还原增感温度较低时,增感中心起空穴陷阱作用,延缓光电子衰减;还原增感温度较高时,增感中心起深电子陷阱作用,加速光电子衰减。由此,我们得到了确定最佳增感温度的依据。  相似文献   
85.
通过A位或B位掺杂改性得到的钛酸钡基铁电材料,在外加直流偏置电场作用下,具有介电常数非线性可调的优异介电性能,可以广泛地应用于压控可调陶瓷电容器和微波可调器件领域。针对钛酸钡基铁电材料的介电非线性特性,讨论了BaTiO_3基铁电材料分别在铁电相、顺电相以及相转变温度场附近的介电非线性机理和相关理论;结合笔者近年来有关介电非线性研究的实验结果和相关文献报道,综述了不同A位离子(如Sr~(2-)和Ca~(2-)等)或B位离子(如Zr~(4 )和Sn~(4-)等)掺杂的BaTiO_3基铁电材料体系的介电非线性研究现状,分别对不同物质形态(陶瓷块体、薄膜和厚膜)的BaTiO_3基铁电材料的介电非线性研究及其应用进行了对比分析;并对钛酸钡基铁电材料今后的发展趋势和研究方向进行了展望。  相似文献   
86.
殷海荣  王明华  章春香 《中国陶瓷》2007,43(2):47-49,55
通过改变混料的秩序以及采用沉降、水煮损耗、温度特性、电导率和化学分析等测试手段,研究了制备钛酸钡的球磨工艺中球磨时间对钛酸钡粉体均匀性及钛酸钡介电性能的影响。研究结果表明:采用不同的球磨时间制得的钛酸钡性能差别较大,球磨时间达12小时时,能减少球磨引起的团聚,极大地改善了固相合成BaTiO3粉体均匀性,并最终提高了钛酸钡的介电性能。  相似文献   
87.
钛酸铅微晶玻璃介电性能研究   总被引:1,自引:0,他引:1  
刘建安  张梅梅 《玻璃与搪瓷》2005,33(1):11-13,42
主要对钛酸铅系铁电性微晶玻璃的介电性能做了研究,研制的微晶玻璃初始组成由形成主晶相的氧化物和形成玻璃相的氧化物构成,经过熔融、热处理可以得到以钛酸铅为主晶相的微晶玻璃,分析了不同组成情况下微晶玻璃的介电性能.  相似文献   
88.
The material coefficients of "soft" and "hard" lead zirconate titanate (PZT) ceramics were determined as complex values by the nonlinear least-squares-fitting of immittance data measured for length-extensional bar resonators. The piezoelectric d -constant should be a complex value to obtain a best fitting between observed and calculated results. Because the elastic, dielectric, and piezoelectric losses determined in this process were not "intrinsic" losses, a calculation process to evaluate the "intrinsic" losses was proposed. It was confirmed that the intrinsic losses were smaller than the corresponding extrinsic losses. The intrinsic piezoelectric loss existed in both soft and hard PZTs; ∼50% of the loss of piezoelectric d -constant was derived from the elastic and dielectric losses. The most notable difference between the soft and hard PZTs was observed in their elastic losses.  相似文献   
89.
In the field of biomaterials and biomedical devices, surface activation has been focused on creating functional groups capable of preferential adsorption of biologically active species (proteins, enzymes, cells, drugs, etc.). In this way an interface can be created between the synthetic material and the biological medium, with the aim of increasing the compatibility of the implant with the human organism. In our experiments a dielectric barrier discharge (DBD), in helium at atmospheric pressure, was used as the source of energy capable of creating active centers that render the functionalized surface favorable to immobilization of biological molecules. Retention of immunoglobulin (IgG) and heparin biomolecules on polyamide‐6 (PA‐6) surfaces after treatment by the DBD was analyzed by atomic force microscopy, adhesion evaluation, and measurement of the contact angle titration in order to assess this incorporation on the treated surfaces. The marked adsorption of the biomolecules on the active sites created by DBD on the exposed surfaces also was related to a complex set of processes, such as enhanced roughness, increased surface wettability, and modified distribution of cationic and anionic groups on the treated surfaces. All these factors could promote interfacial interactions between the specific groups of the biomolecules existing in the biological medium and the type of cationic and/or anionic groups present on the surface. The efficiency of the DBD treatment showed that the DBD technique is useful for preactivation of the polymer surface for immobilization of other biologically active species (such as drugs and enzymes). © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 1985–1990, 2003  相似文献   
90.
Bondability and interfacial reaction between dielectric and insulator layers have been examined to obtain a basic understanding of bonding mechanisms. Lead-containing complex perovskite was used as a dielectric material. Two kinds of glass-ceramics were used as insulator material; lead borosilicate glass containing Al2O3 (insulator A) and the same containing Al2O3 and MgO (insulator B). Dielectric and insulator layers did not bond when insulator A was used. When insulator B was used, however, strong bonding was achieved between the two layers by firing the powder compacts at temperatures between 800° and 1000°C. Addition of MgO to lead borosilicate glass increased the thermal expansion coefficient to that of the dielectric and enhanced the formation of reaction layers, resulting in good bonding. Two reaction layers were identified. The main reaction products were enstatite and bredigite for one layer contacting the dielectric, and enstatite and a compound with the same diffraction pattern as that of faujasite for the other layers contacting insulator B.  相似文献   
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