全文获取类型
收费全文 | 17072篇 |
免费 | 1801篇 |
国内免费 | 1479篇 |
专业分类
电工技术 | 651篇 |
综合类 | 1091篇 |
化学工业 | 4449篇 |
金属工艺 | 2457篇 |
机械仪表 | 310篇 |
建筑科学 | 852篇 |
矿业工程 | 277篇 |
能源动力 | 1313篇 |
轻工业 | 861篇 |
水利工程 | 379篇 |
石油天然气 | 449篇 |
武器工业 | 77篇 |
无线电 | 1779篇 |
一般工业技术 | 2679篇 |
冶金工业 | 560篇 |
原子能技术 | 666篇 |
自动化技术 | 1502篇 |
出版年
2024年 | 97篇 |
2023年 | 453篇 |
2022年 | 648篇 |
2021年 | 747篇 |
2020年 | 650篇 |
2019年 | 646篇 |
2018年 | 621篇 |
2017年 | 707篇 |
2016年 | 633篇 |
2015年 | 608篇 |
2014年 | 816篇 |
2013年 | 1428篇 |
2012年 | 1019篇 |
2011年 | 1142篇 |
2010年 | 888篇 |
2009年 | 963篇 |
2008年 | 914篇 |
2007年 | 968篇 |
2006年 | 878篇 |
2005年 | 726篇 |
2004年 | 679篇 |
2003年 | 543篇 |
2002年 | 488篇 |
2001年 | 428篇 |
2000年 | 396篇 |
1999年 | 301篇 |
1998年 | 258篇 |
1997年 | 241篇 |
1996年 | 203篇 |
1995年 | 183篇 |
1994年 | 151篇 |
1993年 | 142篇 |
1992年 | 114篇 |
1991年 | 111篇 |
1990年 | 112篇 |
1989年 | 107篇 |
1988年 | 72篇 |
1987年 | 43篇 |
1986年 | 29篇 |
1985年 | 47篇 |
1984年 | 34篇 |
1983年 | 18篇 |
1982年 | 25篇 |
1981年 | 17篇 |
1980年 | 15篇 |
1979年 | 7篇 |
1978年 | 7篇 |
1976年 | 5篇 |
1975年 | 5篇 |
1959年 | 4篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
21.
The present study deals with effect of the type and chemical character of incorporated polyester/polyether blocks on the hydrolytic stability of crosslinked polyurethane oligomers. Diffusion parameters of the investigated polyurethane oligomers, giving information concerning chemical changes taking place in neutral, basic and acidic aqueous environments, have also been determined. 相似文献
22.
Mössbauer studies of Fe2+ in water-soaked nafion polymer membranes in the temperature range between 90 K and 250 K have been performed. Above a critical temperature (~ 180 K) the spectra exhibit both elastic narrow absorption lines and quasielastic broad lines. These spectra are typical of bounded diffusion phenomena observed by Mössbauer spectroscopy in macromolecular systems like haemoglobin, myoglobin and ferritin. Similar spectral shapes have been observed by quasielastic neutron scattering from water in nafion membranes. Within 50 K above the critical temperature the total Mössbauer absorption area decreases by an order of magnitude whereas the narrow absorption line decreases by two orders of magnitude. The results are interpreted in terms of bounded diffusive motion of the iron. Using a model based on overdamped harmonically bound Brownian motion, the essential parameters of the iron motion can be derived as a function of temperature. The iron motion most probably reflects the motion of a large Fe2+ complex, e.g. Fe(H2O)2+6, which is attached to the polymer side chains via the sulphonic group. 相似文献
23.
Theprecipitationofpro eutectoidferritefromausteniteiscontrolledbydiffusioninFe Calloys .Withtheassumptionthatthemigratinginterfaceisalwaysinlocalequilibrium ,earlyin 194 9,ZenerC[1] explainedthediffusionalgrowthofpro eutec toidferritebyusingtheFick’slaw .Since… 相似文献
24.
原始组织及加热方式对Al-5.8wt%Cu合金熔化行为的影响 总被引:3,自引:0,他引:3
利用DSC分析手段,研究了具有3种不同凝固组织的Al-5.8wt%合金在7种不同加热方式下的熔化开始温度和熔化热,发现凝固组织中存在的非平衡共晶在加热过程中大部分扩散溶解,溶入基体,剩余部分参与共晶熔化,其熔化开始温度与组织状态无关,随加热速度的增大略有升高,溶解部分的体积分散与组织状态和加热方式有关,随加热时间和非平衡相表面积的增大而增大。 相似文献
25.
钛合金的银脆,镉脆敏感性及其控制 总被引:4,自引:0,他引:4
利用慢应变速率拉伸技术(SSRT),并结合恒载实验,较全面地研究了Ti-6Al-4V合金的银脆行为、固态与液态镉脆行为,确定了应变速率、接触条件、热处理制度、试样取向、温度等因素对Ti-6Al-4V合金银脆与镉脆敏感性的影响,探讨了Ni阻挡层对控制Ti-6Al-4V合金和TC11合金银脆开裂的作用。 相似文献
26.
同等功率和照射时间条件下,在14只家兔大脑皮质运用伊文思蓝染料和超微结构观察方法进行血脑屏障改变的研究。结果表明:CO_2激光作用十分表浅,且激光作用后的水肿层血脑屏障改变是可逆的。 相似文献
27.
本实验用透射电镜和扫描电镜观察了动情期家兔输卵管上皮。证实分泌细胞和纤毛细胞都有分泌功能,共分泌三种分泌物质。本文对这些分泌物质的分泌方式、分泌活动进行了研究和探讨。另外,发现上皮基膜下方始终有一层成纤维细胞形成的胞质膜伴行,据此,对血一输卵管腔屏障的构成亦进行了讨论。 相似文献
28.
David Nistr Karin Keis Sten-Eric Lindquist Anders Hagfeldt 《Solar Energy Materials & Solar Cells》2002,73(4)
In this paper a transport equation is derived which describes the behaviour of the nanostructured metal oxide films in a photoelectrochemical cell. It is shown that a detailed analysis of the charge compensation mechanism necessarily leads to a transport equation with characteristics similar to but logically distinct from the pure diffusion equation. The studied phenomenon was named ambipolar diffusion in the early 1950s. It takes into account the fact that the diffusion processes of ions and electrons occur at different speeds. A weak electric field therefore couples the processes together to preserve charge neutrality. The electric field in turn affects the transport resulting in a deviation from purely diffusive behaviour. However, this has not been widely recognised in the literature for nanostructured semiconductor films until very recently. In this paper a detailed analysis is presented. It is based on the assumption that the current density is solenoidal. It is shown that application of the ambipolar diffusion model to a photoelectrochemical cell based on a nanostructured metal oxide film leads to an additional term in the transport equation, rather than only a new diffusion coefficient as in earlier work. It is also shown that the boundary conditions interact closely with the equation to form a transport model. 相似文献
29.
研究了18种具有不同孔结构参数的粒状铜基甲醇合成催化剂孔隙率对有效扩散系数的影响。结果发现,催化剂微孔孔隙率增大,曲节因子亦增大,扩散阻力增加。将孔隙率与催化剂曲节因子关联,得到了半经验方程,用它可估算催化剂的曲节因子。 相似文献
30.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献