Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

In nearly all cases when an epitaxial layer of HgCdTe is grown on a CdZnTe substrate, there will be a finite lattice mismatch due to the lack of precise control over the ZnTe mole fraction. This leads to strains in the layer, which can be manifested in one or more ways: (1) as misfit dislocations near the interface, (2) as threading dislocations, (3) as surface topographical textures, and (4) as cross-hatch lines seen by x-ray topography. We have found that much of the strain can be relieved by growing on a reticulated substrate. Specifically, when the substrate has been etched to form mesas prior to growth of the layer, the resulting layer on the tops of the mesas shows evidence of significantly reduced strain. CdZnTe substrates oriented (111)A were prepared with two sets of mesas on 125 μm centers and 60 μm centers, and with other planar areas remaining for comparison. From a Hg melt, a layer of LWIR HgCdTe was grown about 16 μm thick on each substrate. Nomarski microscopy showed that the layers on the mesa tops were extremely flat, showing no sign of curvature or surface texture. X-ray topography showed no cross hatch on the mesa tops, while the usual cross hatch appeared in the planar regions. The LPE layer extended laterally beyond the edges of the original mesa because of faster growth in non-(111) directions. Samples were cleaved and examined in cross section. The linear density of etch pits seen in the cross section near the substrate, which represent misfit dislocations, was three times lower in the layer on the mesas than in the layer in the unpatterned region, although both regions have the same layer/substrate lattice mismatch. When an epilayer is grown on an unpatterned wafer (the conventional approach), the growth in any small region is confined laterally by the growing layer in the neighboring regions. However, when growth occurs on a reticulated surface, the lateral confinement is removed, providing strain relief and fewer defects.     

Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy

Local electronic properties in Al_xGa_1−xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometer- to micronscale inhomogeneities in electronic structure to be elucidated. Substantial lateral variations in local threshold voltages for transistor channel formation are observed, at length scales ranging from submicron to >2 μm, and found to arise primarily from local variations in Al_xGa_1−xN layer thickness. Features in electronic structure are also observed that are consistent with the existence of networks of negatively charged threading edge dislocations, as might be formed at island coalescence boundaries during epitaxial growth. The negative charge associated with these structures appears to lead to local depletion of carriers from the channel in the Al_xGa_1−xN/GaN transistor epitaxial layer structure.     

Al2O3/Al复合材料的界面结构特征

利用高分辩透射电子显微镜研究挤压铸造法制备的亚微米 Al 2O 3颗粒增强 Al 基复合材料的界面微观结构。结果表明 : Al基体的 (200) 和 (111) 面优先沿 Al 2O 3颗粒表面生长 , 在复合材料界面处 Al 基体与 Al 2O 3颗粒具有 Al (200) ∥Al 2O 3 (101 2) 、Al [011 ] ∥Al 2O 3 [0221 ] 的晶体学位向关系并形成半共格界面 , 且界面存在 Al (111) / / Al 2O 3 ( 1120) 的共格关系。界面干净无任何反应物。接近界面的 Al 基体中出现了柏氏矢量为 b= 1/ 3 [ 111 ] 弗兰克不全刃位错 , 该刃位错引起界面附近基体中明显的晶格应变场 , 位错周围晶格变形场的范围约为 20～30 层原子面宽度 , 而在 Al 2O 3颗粒靠近界面的区域中未观察到位错等缺陷。并从晶体学角度对界面的形成机制进行了分析。     

CSP工艺热轧低碳钢板的强化机制

采用金相显微镜、H—800透射电镜和正电子湮没方法分析了CSP热轧低碳钢板金相组织、析出物形貌、尺寸、分布及位错密度。结果表明:CSP工艺热轧低碳钢板的晶粒较为细小,约为5.3μm;当累积变形量较小、变形温度较高时,析出物主要在晶界上,数量少见比较粗大,其尺寸大多大于150nm;当累积变形量较大、变形温度较低时,析出物主要在晶内,细小、弥散且数量较多,其尺寸大多为20～100nm,析出物主要为Al_2O_3、MnS或Cu_7S_4;随着累积变形量的增加,位错密度明显增加,终轧后轧件的位错密度约为6.35×10~(14)m~(-2)。晶粒细化、析出物弥散分布及位错密度增加是CSP工艺热轧低碳钢板强度高的决定因素。     

含微量稀土元素的Al-Zn-Mg合金的超塑变形机制

用透射电镜详细观察了含微量稀土的 Al-Zn-Mg 合金在超塑变形过程中晶界位错的形态、运动及其与晶界第二相粒子的相互作用情况。发现晶界中的第二相粒子对位错沿晶界运动有明显的阻碍作用。实验还发现在含第二相粒子较多的晶界的超塑性合金中,晶界滑动是通过位错沿晶界运动和晶界的粘滞性流动两种机制同时发生作用进行的,它们相互促进并共同推动了晶界滑动的发展。首次在透射电镜下观察到超塑变形使晶界加宽的现象,在面缩率ψ=72.2%的样品中测得某晶界的宽度约为100nm,从而证实了超塑变形的晶界滑动和晶粒转动机制。     

氮化镓材料中的位错对材料物理性能的影响

氮化镓材料中的位错是制约GaN发光器件及电子器件的性能的一个关键因素。目前对于氮化镓材料中的位错的研究是一大热点。扼要综述了位错对于材料及器件的物理性能的影响：非辐射复合作用、造成器件的漏电流、缩短器件的寿命。并简要介绍了减少GaN外延层中的位错密度的几种方法。     

耦合位错密度的6111铝合金热变形本构模型

利用Gleeble-1500热模拟试验机对6111铝合金进行高温拉伸试验,研究了其在变形温度为350、450和550℃以及应变速率为0.1、1和10 s^-1时的热变形行为.6111铝合金的流变应力随温度升高而减小,随应变速率增大而增大,其热变形从应变硬化阶段过渡到稳态变形阶段.建立了综合考虑应变、温度和应变速率对流变应力的影响以及耦合位错密度的统一黏塑性本构模型,并通过遗传优化算法求解出本构模型中的材料常数.模型计算得到的真应力-真应变曲线与试验数据吻合较好.     

A STUDY OF RATE-DEPENDENCE AT ELEVATED TEMPERATURE FOR AN Al-Cu-Mg ALLOY

The hot deformation of an Al-Cu-Mg alloy was studied in the two temperature ranges (room temperature-300℃ and 400℃-480℃). The rate-independent flow curves are typical of elasto-plastic response with significant work hardening followed by strain softening below 300℃. Similar dislocation structures with high density tangled into grain interiors were observed by TEM, which suggests that the process of obstacles arresting mobile dislocations results in this macroscopically rate-independence. At 400-480℃, all rate dependent flow behaviors characterized by a continuous softening after an initial work hardening at a small plastic strain show large tensile elongations. Long dislocation segments around the second phases infer their good mobility to climb across obstacles. Grain boundary morphology observed by TEM suggests that the capacity of the grain boundaries to absorb the dislocations sensitively accounts for the rate-dependent mechanical properties.     

Study of crystal defects using ion channelling and channelling radiation

The channelling technique to study crystal defects is described and its applications to various kind of defects to study their atomistic nature have been reviewed. Special emphasis has been placed on the applications to extended defects like dislocations. Finally a related new technique being developed for the last few years, namely the channelling radiation technique has been discussed along with its applications to study the dislocations.