流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Ultra thin (5 nm) silicon oxynitride (SiON) films were fabricated at a low temperature using nitrogen plasma generated by an inductively coupled plasma system. Effects of post-metalization annealing (PMA) of Al/SiON/Si MOS structure on the electrical properties of the SiON films were studied and correlations between the charge trapping states and the leakage current were established. Positive charge trapping by interface states generated by plasma damage was characterized by the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. Hysteresis was observed to be completely removed by PMA while interface state density at the Si mid band gap reduced from 2.2×10¹³ to 3.7×10¹¹/eV/cm² and the oxide fixed charge density changed from 3.3×10¹² to −4×10¹¹/cm². The leakage current also decreased significantly, by more than two orders of magnitude, with PMA. The analysis of the leakage current using trap assisted tunneling (TAT) mechanism indicated that with PMA, the trap energy level in the SiON film becomes shallower from 1.3 to 0.7 eV. The positive trapped charges were observed to be annihilated by PMA and the trapping sites became neutral trap centers in the SiON film. This could lead to the reduction in the leakage current component given rise to by TAT.     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

碳纳米管(CNT)场发射显示器的关键技术的研究

对碳纳米管阴极的制备以及场发射显示器的真空封装技术进行了研究.利用一种新的碳纳米管生长工艺制备出了具有优良场发射性能的碳纳米管阴极.并将这种直接生长的碳纳米管薄膜作为阴极,结合一种弹性封装工艺,开发了一种具有简单字符显示功能的场发射显示器.该显示器在较低的工作电压下就可获得高亮度的显示效果,并且器件的亮度与驱动电压成较好的线性关系,这将有利于未来的碳纳米管场发射显示器实现高亮度和多级灰度显示.器件的持续工作寿命测试已经超过5500小时,充分验证了碳纳米管作为场发射阴极的应用潜力.     

Processing and microstructure of non-oxide ceramic fibres

Research and development efforts on high-temperature, oxidation-resistant fibres have increased over the past decade due to the demand for light-weight, stiff and strong composite materials in aerospace applications. Varieties of ‘high-performance’, continuous, non-oxide fibres with low-density, high tensile strength and tensile modulus have been developed either from organic precursors or via chemical vapour deposition for fabrication of ceramic matrix composites. Fibres derived from polymer precursors (e.g. Nicalon, Tyranno, HPZ) are small in diameter (compared to CVD monofilaments) and are ideally suited for ceramic composites. Processing, microstructural stability and mechanical properties of these newly developed SiC and Si₃N₄ base fibres are briefly reviewed in this paper.     

ATMOSPHERIC DEPOSITION OF CHEMICAL SPECIES TO POLAR SNOW

Particles and gases can deposit from the atmosphere to polar snow by several mechanisms. Dry deposition can be considered to consist of three steps: aerodynamic transport from the free atmosphere to the viscous sublayer near the surface, boundary layer transport across the sublayer, and interactions with the surface. The particle dry deposition mass flux is dominated by the largest particles present in a size distribution. Wet deposition includes in-cloud and below-cloud scavenging, where the former refers to uptake of particles during nucleation of cloudwater as well as scavenging of particles and gases by existing droplets and ice crystals. Of all the wet deposition mechanisms, nucleation scavenging is often the most important mechanism for particles in the polar regions. Finally, incorporation of particles and gases into fog droplets and subsequent settling of the fog to the snow surface can be an important removal process in regions of frequent fog. For Summit, Greenland, the total deposition of MSA, SO₄^2-, Na⁺, K⁺, and Ca²⁺ during May 24-July 13, 1993 was dominated by wet deposition: this mechanism accounted for an average of 62% of the total deposition for these species. Fog and dry deposition accounted for 21% and 17% of the total, respectively. These results suggest that all three mechanisms may need to be considered when estimating total deposition of certain chemical species to polar snow.     

三峡水库减淤增容调度方式研究——多汛限水位调度方案

本文建议在汛期中小流量时（Q<35000m3/s），将坝前水位维持在148～151m；出现汛情且流量更较大后，将坝前水位降低到143m；入库流量大于35000m3/s且短期预报将出现大于十年一遇洪水时，预泄洪水到135m.按这一调度，汛期约80％时间可以维持在较高水位，一般洪水期。汛限水位143m不影响坝区通航，135m水位迎洪可大量增加防洪库客。到100年后可减淤30亿m3，增加防洪库容约40亿m3.变动回水区减淤40%，优化了坝区水沙搭配，可改善通航条件。降低库区洪水位，缓解防洪与移民的矛盾。可对发电带来较大好处：提高发电效益，减少粗沙过机。初期水库排沙比大于原方案，可减轻下游冲刷。同时，可减小三峡汛初泄水与鄱阳湖防洪的矛盾。     

Skeletal Isomerization and Inter—molecular Hydrogen Transfer Reactions in Catalytic Cracking

Bimolecular hydrogen transfer and skeletal isomerization the important secondary reac-tions among catalytic cracking reactions,which affect product yield distribution and product quality,Catalyst properties and operating parameters have great impact on bimolecular hydrogen transfer and skeletal isomerization reactions .Bimolecular hydrogen transfer activity and skeletal isomrization activity of USY-containing catalysts are higher thn that of ZSM-5-containing catalyst.Coke deposition on the active sites of catalyst may suppress bimolecular hydrogen transfer activity and skeletal isomer-ization activity of catlys in different degrees.Short raction time causes a decrease of hydrogen trans-fer reaction,but and increase of skeletal isomerization reaction compared to cracking reaction in catalytic cracking process.