喷射沉积SiCP/Al复合材料及6066铝合金热挤压工艺的研究

作者应用喷射共沉积工艺制备 6 0 6 6 / Si Cp复合材料和 6 0 6 6铝合金锭坯 ,在不同的挤压比、挤压温度下挤压成　　型 ,用金相显微镜观察材料的显微组织 ,并测试了材料的力学性能。结果表明 :Si C/ Al复合材料喷射沉积状态的组织很疏松 ,存在许多的间隙 ,其密度约为理论密度的 86 % ,Si C颗粒在复合材料中分布不均匀 ,喷射沉积铝合金基体的致密度可达 90 % ;挤压过程使 Al/ Si Cp复合材料的大多数空隙消失 ,致密程度随挤压比的增大而增大 ,挤压比超过 14 .7后不会明显变化 ,而铝合金基体的致密程度与挤压比的变化关系不明显 ;挤压温度对材料的致密程度影响不大 ;Al/ Si Cp复合材料性能在挤压比超过 14 .7后变化不大 ;铝合金的性能不受挤压比变化的影响 ;而挤压温度过高使材料性能下降     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

Characterization of EBPVD micro-layer composites and simulation of its internal stress state

Based on the basic operating principal and the technology characteristic of electron beam physical vapor deposition(EBPVD) technique, EBPVD was used to prepare the micro-layer composites. The effect on the substrate preheating temperature was taken into accounts and the finite element analysis package ANSYS was used to simulate the internal stress field and the potential displacement changing tendency. The results show that one of the most important quality factors on the judgment of micro-layer composites is the adhesion between the substrate and the deposition layers as well as among the different deposition layers. Besides the existance of temperature gradient through the thickness of layers, the main reason for the internal stress in micro-layer composites is the mismatch of various properties of the layer and the substrate of different thermal expansions and crystal lattice types. With the increase of substrate preheating temperature, the inter-laminar shear stress also takes on a tendency of increase but the axial residual stress decrease.     

Effect of type of processing on the microstructural features and mechanical properties of Al-Cu/SiC metal matrix composites

In this study, an aluminum based metallic matrix (Al-2wt.% Cu) was reinforced with SiC particulates using a conventional casting technique and a new disintegrated melt deposition technique. Microstructural characterization studies conducted on the samples taken from disintegrated melt deposition technique revealed a more uniform distribution of SiC particulates and good interfacial integrity between SiC particulates and metallic matrix when compared to the conventionally cast composite samples. Results of ambient temperature mechanical tests demonstrate an increase in 0.2% YS and ultimate tensile strength of samples taken from disintegrated melt deposition technique when compared with the unreinforced and conventionally cast composite samples. The results of microstructural characterization and mechanical testing were finally rationalized in terms of the nature of processing technique employed to reinforce Al-2wt.% Cu metallic matrix with SiC particulates.     

溅射——气体——聚集共沉积法制备金属／金属（介质）复合团簇镶嵌薄膜

提出了溅射－气体－聚集共沉积制备金属／金属（介质）复合团簇镶嵌薄膜的新方法，并利用该方法成功地在方华膜衬底上制备了系列Ｆｅ／Ａｇ及ＣａＦ２复合团簇镶嵌薄膜样品。透射电镜分析结果表明，样品中Ｆｅ（Ｃｕ）团簇都较好地镶嵌于Ａｇ（ＣａＦ２）基质中，其结构为两种材料的多晶共存形态。进一步分析发现，与块材相比，Ｆｅ／Ａｇ样品中Ｆｅ团簇晶格常数呈现出不同程度的收缩，而Ｃｕ／ＣａＦ２样品中Ｃｕ团簇晶格常数则呈现出不同程度的膨胀。运用附加压力的模型对该现象进行了解释。     

国外离子束系统（IBS）发展概况

综述了国外离子束刻蚀和沉积系统的研究进展，指出了离子束系统在半导体技术研究，开发和生产中的重要性。     

Graphite formation on Ni film by chemical vapor deposition

Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.     

A Ray-Tracing Analysis of ICRH in Tokamaks

Power deposition profiles generated by Ion Cyclotron Resonance Heating （ICRH） in non-circular tokamaks are studied using a ray-tracing technique. The simulation results for the Experimental Advanced Superconductor Tokamak （EAST） D-shaped plasma are presented. It is indicated that the spatial distributions of plasma parameters （plasma density, species temperature, minority ion concentration, etc.） have an significant influence on the power deposition profiles. The findings may be highly useful to the planned plasma heating and experiments in EAST.