超声振动辅助等离子沉积成形的研究

介绍了等离子沉积成形的原理、应用及其存在的优缺点,从超声原理出发介绍了超声振动对等离子沉积过程中晶粒及组织的影响,并设计了超声振动辅助等离子沉积成形的实验装置,对实验过程中以及该实验可能涉及的问题进行了探讨.     

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm^?1) and Raman (1117 cm^?1) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma‐enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as‐deposited films. The high degree of structural retention in the as‐deposited film allows for the beneficial formation of intrinsically porous silsesquioxane cages upon annealing in air. Complete oxidation of the silicon creates ‘Q’ groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as‐deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade‐off between improved mechanical properties and higher dielectric constants. Films annealed at 410 °C have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent‐less and low‐energy nature of iCVD make it attractive from an environmental safety and health perspective.     

电视、激光、中波红外多波段增透膜研究

针对多光谱成像中存在的多光谱共光路问题,在ZnSe基底上设计了三波段增透膜。通过选取合适的薄膜材料,利用TFCalc膜系设计软件对膜系进行设计与优化,使用热蒸发和离子源轰击结合的方式沉积膜层,采用分光光度计和傅里叶红外光谱仪测量光谱特性。通过设计粘结层与保护层,有效提高了膜层与基底之间的结合力以及膜层的强度。该膜层可以实现多光谱ZnSe基底在电视（500~800 nm）、1064 nm激光和中波红外（3.7~4.8 μm）三个波段高效增透,且具有良好的环境适应性。     

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

The precise control of the domain structure, layer thickness, and stacking order of graphene has attracted intense interest because of its great potential for nanoelectronics applications. Much effort has been devoted to synthesize semiconducting Bernal (AB)‐stacked bilayer graphene because of its tunable band structure and electronic properties that are unavailable to single‐layer graphene. However, fast growth of large‐scale bilayer graphene sheets with a high AB‐stacking ratio and high mobility on copper poses a tremendous challenge, which has to overcome the self‐limiting effect. This study reports a low‐cost but facile method to rapidly synthesize bilayer Bernal graphene by atmospheric pressure chemical vapor deposition using polystyrene as the feedstock. The bilayer graphene grains and continuous film obtained are of high quality and exhibit field‐effect hole mobilities as high as 5700 and 2200 cm² V^?1 s^?1 at room temperature, respectively. In addition, a synchronous growth mechanism of bilayer graphene is revealed by monitoring the growth process, resulting in a high surface coverage of nearly 100% for a near‐perfect AB‐stacking order. This new synthesis route is significant for industrial application of bilayer graphene and investigation of the growth mechanism of graphene by the chemical vapor deposition process.     

BeO瓷的金属化和封接

综述了氧化铍瓷的金属化及其封接技术,指出氧化铍瓷和Al2O3瓷在金属化工艺上的差异,论文最后汇集了国内外常用烧结金属粉末法15种配方和工艺参数,以资同行专家参考.     

Fabrication of Silicon Inverse Woodpile Photonic Crystals

Silicon inverse woodpile photonic crystals are fabricated for the first time. Our approach, which is based on direct laser writing of polymeric templates and a novel silicon single‐inversion procedure, leads to high‐quality structures with gap/midgap ratios of 14.2 %, centered at a wavelength of 2.5 μm. It is shown that gap/midgap ratios as large as 20.5 %, centered at 1.55 μm, may become possible in the future.     

Sigmoid-growth curve of lattice-constant against annealing-temperature of Cd1−xZnxTe thin films and its structural,optical and morphological characteristics

Stacked CdTe/Zn/CdTe layers were deposited on glass substrates. The vacuum-evaporated thin films were subsequently annealed in vacuum ambience at various temperatures. Change in lattice-constant of major Cd_1−xZn_xTe planes against temperature was plotted from the XRD results. The graphs followed sigmoid-growth model and were regressed well by standard Boltzmann and Logistic functions. Lattice-constant varied maximum in between 375–400 °C and 425–450 °C, giving two separate growth trends. Optical studies suggested that presence of charge impurities and defects reduced the transmittance and band-gap values of the samples. Such reduction occurred, despite of greater formation of Cd_1−xZn_xTe. Decreasing granularity was however associated with increasing band-gap for samples annealed at 425 and 450 °C. SEM micrographs showed that granularity decreased significantly for samples annealed at higher temperatures. EDX results were further used to co-relate the compositional characteristics with structural and optical features.     

钽掺杂对二氧化钒多晶薄膜相变特性的影响

将Ta_2O_5与V_2O_5均匀混合,压制成溅射靶,用离子束增强沉积方法在二氧化硅衬底上沉积掺Ta氧化钒薄膜.在氮气中适当退火,形成掺杂二氧化钒多晶薄膜.X射线衍射结果显示,薄膜具有单一的(002)取向.XPS测试表明,膜中V为+4价,Ta以替位方式存在.温度-电阻率测试表明,薄膜具有明显的相变行为,原子比为3%的Ta掺杂后,二氧化钒多晶薄膜相变温度降低到约48℃.Ta原子的半径大于V原子的半径,Ta的掺入在薄膜中引入了张应力;5价Ta 替代4价V,在d轨道中引入多余电子,产生施主能级,这些是掺钽二氧化钒多晶薄膜相变温度降低的原因.     

Growth of Strained Si1－xGex Layer by UV/UHV/CVD

Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.