Ta_2O_5敏感膜H~＋－ISFET研究

在不用金作掩蔽膜的情况下,在氢氟酸混合液中对采用直流反应溅射方法制备的Ｔａ２Ｏ５薄膜进行选择性腐蚀,制成Ｔａ２Ｏ５膜Ｈ＋－ＩＳＦＥＴ。测试结果表明,该器件在灵敏度、线性范围、线性度、响应时间、滞后、时漂和选择性等方面普遍优于Ｓｉ３Ｎ４膜同类器件。可直接用于溶液的ｐＨ值测量。     

A COMPLEX-TYPE FOCUSSED MAGNETRON FOR SPUTTERING

ＡＣＯＭＰＬＥＸ－ＴＹＰＥＦＯＣＵＳＳＥＤＭＡＧＮＥＴＲＯＮＦＯＲＳＰＵＴＴＥＲＩＮＧ￥ＺｈｅｎｇＳｉｘｉａｏ（郑思孝）（ＩｎｓｔｉｔｕｔｅｏｆＮｕｃｌｅａｒＳｃｉｅｎｃｅａｎｄＴｅｃｈｎｏｌｏｇｙ,ＳｉｃｈｕａｎＵｎｉｖｅｒｓｉｔｙ,Ｃｈｅｎｇｄｕ...     

Evidence for Glass–glass Interfaces in a Columnar Cu–Zr Nanoglass

Comprehensive analyses of the atomic structure using advanced analytical transmission electron microscopy-based methods combined with atom probe tomography confirm the presence of distinct glass–glass interfaces in a columnar Cu-Zr nanoglass synthesized by magnetron sputtering. These analyses provide first-time in-depth characterization of sputtered film nanoglasses and indicate that glass–glass interfaces indeed present an amorphous phase with reduced mass density as compared to the neighboring amorphous regions. Moreover, dedicated analyses of the diffusion kinetics by time-of-flight secondary ion mass spectroscopy (ToF SIMS) prove significantly enhanced diffusivity, suggesting fast transport along the low density glass–glass interfaces. The present results further indicate that sputter deposition is a feasible technique for reliable production of nanoglasses and that some of the concepts proposed for this new class of glassy materials are applicable.     

An overview on microwave processing of material: A special emphasis on glass melting

Material processing adopting microwave heating has emerged as an alternative tool owing to faster processing, a cleaner environment, and several other advantages. This review provides a summary of recent reports of microwave synthesis of materials. This study reviews the use of microwave energy for application in several material processing technologies apart from food processing. A special emphasis has been made in the processing of glass adopting microwave energy. Melting of glass comprising SiO₂, P₂O₅, B₂O₃ as the main building block has been discussed. It has been revealed that silica, a microwave transparent material as reported earlier, can be heated under microwave heating directly. Microwave absorption of raw materials and different glass system has been discussed. Dielectric properties, particularly loss tangent or loss factor, are presented for some glass composition. Less evaporation of ingredient and low contamination from the crucible wall are noticed during glass melting using microwave heating. Enhanced iron redox ratio (Fe⁺²/∑Fe) in microwave processing may be considered an advantage in the preparation of heat absorbing filter glass. Small-scale glass melting using the microwave heating has a significant impact on energy and time saving. However, the challenges associated with the upscaling glass melting with microwave heating and future scope have been talked about.     

集成电路用钽溅射靶材制备工艺研究

金属钽可作为集成电路中铜与硅基板的阻隔层材料,以防止铜与硅扩散生成铜硅合金影响电路性能。采用钽靶材通过物理气相沉积技术溅射钽到硅片上。靶材晶粒尺寸与织构取向影响溅射速率及溅射薄膜均匀性,要求钽靶材晶粒尺寸应小于100μm,在靶材整个厚度范围内应主要是(111)型织构。同时,为了避免薄膜存在杂质颗粒,要求钽靶材纯度不小于99.99%。本文对钽靶材电子束熔炼、锻造、轧制、热处理等关键工艺进行了系统研究,找到了一种有别于常规钽靶材生产工艺的新方法,所生产产品化学纯度、晶粒尺寸、织构等性能优良,产品成品率高,适于批量化生产。     

直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响

本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10~(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。     

射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理

以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。     

Cu/Al_2O_3复合薄膜的制备及其抗氧化性能

本文在纺织纤维基材表面采用二次溅射沉积法制备了Cu/Al_2O_3复合薄膜,利用扫描电镜(SEM)、X射线能谱仪(EDX)和矢量网络分析仪对室温环境下存放3600h的复合薄膜的表面形貌、元素含量以及屏蔽效能进行了测试,并与相同工艺条件下制备的纯Cu薄膜进行了对比分析。结果表明:与纯Cu薄膜结构的不稳定性相比,由于复合薄膜表层Al_2O_3薄膜的结构稳定性和致密性,Cu/Al_2O_3复合薄膜在保证高屏蔽性能的前提下,具有整体结构的稳定性,表现出了良好的抗氧化性能。     

GZO厚度对非晶硅电池中复合背电极的影响

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO :Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明：随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(I_SC)、开路电压(V_OC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.     

氮流量比对磁控溅射(CoCrFeNi)Nx高熵合金薄膜的组织和性能的影响

采用直流磁控溅射法制备(CoCrFeNi)N_x高熵薄膜,研究了氮流量比对薄膜的力学性能和电磁性能的影响。结果表明,在不同氮流量比条件下制备的(CoCrFeNi)N_x薄膜,都具有致密的组织、简单的FCC结构并呈现(200)择优取向。随着氮流量比从10%提高到30%,薄膜的硬度和弹性模量随之增大,其最大值达到14 GPa和212 GPa;电阻率基本上呈增大的趋势,最大值达到138 μΩ?cm;饱和磁化强度和磁导率随之减小,薄膜饱和磁化强度最高为427.43 emu/cm³。薄膜的矫顽力约为0。