高靶材利用率的新型磁控溅射器

在现代大型薄膜连续生产线中 ,其生产效率主要受以下两因数的影响 :溅射器的沉积速率和靶材的使用周期。本实验研制了一种圆筒形靶材绕溅射器中心轴线匀速旋转 ,并且与溅射器之间用螺丝固定连接的新型磁控溅射器。论述了新型溅射器的结构与组成 ,并给出实验结果与结论。其具有靶材利用率高、使用周期长、换靶时间短等优点。同时在反应溅射时避免在靶面上的形成介质层 ,提高了溅射过程的稳定性。     

反应RF磁控溅射法制备氧化铝薄膜及其介电损耗

在氧气和氩气的混合气氛中 ,利用反应射频磁控溅射铝靶制备了非晶氧化铝薄膜 ,其直流介电强度为 3～ 4MV/cm。当固定氩气流量 (压力 ) ,改变氧分压时 ,薄膜沉积速率先减小 ,再增大 ,然后又减小。适当的低工作气压和溅射功率下 ,薄膜的介电损耗可以达到 0 4% ,小于已报道的关于非晶氧化铝薄膜的损耗。从 1 0 0Hz到 5MHz,所有的样品均未显示出可见的极化弛豫引起的损耗峰     

Development of refractory silicate-yttria-stabilized zirconia dual-layer thermal barrier coatings

Development of advanced thermal barrier coatings (TBCs) is the most promising approach for increasing the efficiency and performance of gas turbine engines by enhancing the temperature capability of hot section metallic components. Spallation of the yttria-stabilized zirconia (YSZ) top coat, induced by the oxidation of the bond coat coupled with the thermal expansion mismatch strain, is considered to be the ultimate failure mode for current state-of-the-art TBCs. Enhanced oxidation resistance of TBCs can be achieved by reducing the oxygen conductance of TBCs below that of thermally grown oxide (TGO) alumina scale. One approach is incorporating an oxygen barrier having an oxygen conductance lower than that of alumina scale. Mullite, rare earth silicates, and glass ceramics have been selected as potential candidates for the oxygen barrier. This paper presents the results of cyclic oxidation studies of oxygen barrier/YSZ dual-layer TBCs.     

基材温度对铟锡氧化物膜结构与电性能的影响

采用阴极磁控溅射法,在不同基片温度条件下镀覆铟锡氧化物（ＩＴＯ）透明导电膜,由Ｘ射线衍射分析试样结构随温度的变化,并测试了样品的方块电阻,电阻率,Ｈａｌｌ迁移率,载流子浓度等电性能和膜层的可见光透过率。     

Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f.-magnetron sputtering

Deposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO₂ thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO₂ (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO₂(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO₂(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO₂ thin film had a polycrystalline structure. Annealing at 950°C in O₂ atmosphere for 30 min increased and sharpened the CeO₂(200) peak.     

磁控溅射工艺参数对Cu,Al薄膜与Gd基底附着性的影响

为了探讨Gd表面溅射保护膜的附着性能,利用直流磁控溅射技术在Gd基体上分别镀Cu和Al膜.用扫描电镜(SEM)和能谱仪对薄膜进行表征,用引拉法测定了薄膜的附着强度.结果表明:A1膜表面质量好,Al/Gd界面结合好,附着强度高,在优化工艺参数条件下薄膜附着强度可达到27.60 MPa;Cu膜表面质量较差,Cu/Gd界面结合差,附着强度低,在优化工艺参数条件下薄膜附着强度最高仅为3.02 MPa.     

Microstructure, domain structures and ferroelectric properties in (Pb0.8,La0.1,Ca0.1)TiO3/Pb(Zr0.2,Ti0.8)O3 bilayered thin film

Ferroelectric (Pb_0.8,La_0.1,Ca_0.1)TiO₃/Pb(Zr_0.2,Ti_0.8)O₃ (PLCT/PZT) bilayered thin film was prepared on Pt(111)/Ti/SiO₂/Si(100) substrate by RF magnetron sputtering technique. Pure perovskite crystalline phase, determined by X-ray diffraction, was formed in the PLCT/PZT bilayer. The bilayered film exhibited a very dense and smooth surface morphology with a uniform grain size distribution. The ferroelectric domain structures were investigated by a combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM, respectively). It is demonstrated by both VPFM and LPFM observations that out-of-plane and in-plane lamellar ferroelectric domains coexist in the bilayered thin film. The PLCT/PZT bilayered film possesses good ferroelectric properties with relatively high spontaneous polarization (2P_s = 82 µC/cm²) and remnant polarization (2P_r = 26.2 µC/cm²).     

Discharge characteristics of plasma display panels with Si-doped MgO protective layers

We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.     

The preparation of calcium phosphate coatings on titanium and nickel–titanium by rf-magnetron-sputtered deposition: Composition, structure and micromechanical properties

Thin calcium phosphate coatings with a thickness of 0.09 to 2.7 µm were prepared by radio-frequency magnetron sputtering deposition on NiTi and Ti substrates at a substrate temperature of 500 °C in argon atmosphere. Scanning electron microscopy (SEM) showed that the surface structure is uniform and dense without visible defects (pores and microcracks). Rutherford backscattering spectroscopy (RBS) and energy-dispersive X-ray spectroscopy (EDX) confirmed that the coating contains calcium, phosphorus, and oxygen with a uniform composition. Crystallographically, the coating consists of crystalline hydroxyapatite which is also supported by infrared spectroscopy. The mechanical characteristics of the coating were measured by nanoindentation (Vickers indenter), giving a nanohardness of 10 GPa and a Young's modulus of 110 GPa. The strength of adhesion of the calcium phosphate coating to the metallic substrates depended on the coating's thickness and decreased for a thickness larger than 1.6 µm. No difference was observed between NiTi and Ti substrates.     

Microstructure and tribological properties of LaxCeyO1 − x − y composite nanofilms

A series of La_xCe_yO_{1 − x − y} films (x = 0–0.54, y = 0–0.58) with thickness of 35–45 nm was deposited by unbalanced magnetron sputtering. High-resolution transmission electron microscope observation shows that La_0.24Ce_0.34O_0.42 film has polycrystalline structure. La₂O₃ and CeO₂ are formed within the La_xCe_yO_{1 − x − y} films confirmed by the X-ray diffraction and X-ray photoelectron microscopy. The friction coefficient and residual compressive stress of five kinds of three-element compound films exhibit symmetric distribution with the relative equilibrium of La and Ce atomic concentration within the films. The critical load of all deposited films is between 28 and 33 mN. The friction coefficient of two kinds of rare earth complex oxide films is in the range of 0.08–0.09, which is lower than that of only one kind of rare earth oxide films, and the friction mechanism is discussed.