Domain Engineering in ReS2 by Coupling Strain during Electrochemical Exfoliation

Chemical exfoliation has been used for the fast and large‐scale production of 2D nanosheets from graphene and transition metal dichalcogenides; however, it is rarely used for domain engineering of exfoliated nanosheets. Herein, it is found that the use of large sized molecular intercalants during electrochemical intercalation induce atomic row dislocation and parallel mirror twin boundaries (MTBs) on an otherwise pristine rhenium disulfide (ReS₂) crystal, such that the exfoliated flakes possess a parallel, multi‐domain structure. These domains can be distinguished under a polarized microscope owing to the intrinsic in‐plane optical dichroic properties of ReS₂, thereby affording a way to track the number of domains introduced versus the size of the molecular intercalant during electrochemical exfoliation. Ferromagnetism is detected on the intercalated sample using large sized molecular intercalants. Density function theory suggests that these may be due to the coupled effects of lattice strain and S vacancies in the MTBs.     

低温退火对稀磁半导体(Ga,Mn)As性质的影响

利用低温分子束外延技术在GaAs(001)上外延生长出厚度为500nm的稀磁半导体(Ga,Mn)As薄膜. 双晶X射线衍射证明其为闪锌矿结构，晶格参数为0.5683nm，据此推导出其Mn含量为7%. 磁测量结果揭示其铁磁转变温度为65K. 观察了低温退火处理对(Ga,Mn)As磁性质的影响，发现生长后退火处理显著提高了其铁磁转变温度，可以达到115K.     

Fe掺杂量和退火氛围对TiO2薄膜晶体结构和磁性能的影响

采用直流磁控溅射方法在玻璃基片上制备了不同Fe掺杂量的TiO2薄膜,并对薄膜分别在空气和真空氛围下500℃进行30min退火处理。研究了Fe掺杂量和退火氛围对TiO2薄膜的结晶状态、表面形貌和磁性能的影响。结果表明,真空中500℃下退火的Fe掺杂的TiO2薄膜表现为非晶态结构,没有观察到室温铁磁性能的出现,而空气中500℃退火的样品显示出良好的结晶状态,且所有掺杂的样品均显示出室温铁磁性,并且随着Fe掺杂量的增加,TiO2薄膜的晶体结构逐渐由锐钛矿相向金红石相转变。     

Synthesis of Ultrathin Metallic MTe2 (M = V,Nb, Ta) Single‐Crystalline Nanoplates

Two‐dimensional materials with intrinsic magnetism have recently drawn intense interest for both the fundamental studies and potential technological applications. However, the studies to date have been largely limited to mechanically exfoliated materials. Herein, an atmospheric pressure chemical vapor deposition route to ultrathin group VB metal telluride MTe₂ (M = V, Nb, Ta) nanoplates with thickness as thin as 3 nm is reported. It is shown that the resulting nanoplates can be systematically evolved from mostly thicker hexagonal domains to thinner triangular domains with an increasing flow rate of the carrier gas. X‐ray diffraction and transmission electron microscopy studies reveal MTe₂ (M = V, Nb, Ta) nanoplates are high‐quality single crystals. High‐resolution scanning transmission electron microscope imaging reveals the VTe₂ and NbTe₂ nanoplates adopt the hexagonal 1T phase and the TaTe₂ nanoplates show a monoclinic distorted 1T phase. Electronic transport studies show that MTe₂ single crystals exhibit metallic behavior. Magnetic measurements show that VTe₂ and NbTe₂ exhibit ferromagnetism and TaTe₂ shows paramagnetic behavior. The preparation of ultrathin few‐layered MTe₂ nanoplates will open up exciting opportunities for the burgeoning field of spintronics, sensors, and magneto‐optoelectronics.     

质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响

采用电感耦合等离子体增强物理气相沉积法制备了Yb掺杂ZnO薄膜, 并采用不同剂量质子对薄膜进行了辐照实验, 重点采用X射线衍射、光电子能谱、正电子湮灭图谱和磁测量系统对Zn_0.985Yb_0.015O薄膜的缺陷和磁性能进行了研究。磁性测试结果表明: Zn_0.985Yb_0.015O薄膜经质子辐照后其饱和磁化强度随辐照剂量的增加逐渐增大, 当辐照剂量为6 × 10¹⁵ ions/cm²时, 其饱和磁化强度达到最大, 随着辐照剂量的进一步增加, 其饱和磁化强度反而变小。正电子湮灭图谱结果显示薄膜中主要存在锌空位相关的缺陷, 并且锌空位相关的缺陷随辐照剂量的变化与饱和磁化强度随辐照剂量的变化相一致。本研究从实验上揭示了在含有各种缺陷的Yb掺杂ZnO薄膜中, 锌空位缺陷是影响质子辐照Zn_0.985Yb_0.015O薄膜磁性的主要原因。     

Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering

The microstructural,optical,and magnetic properties and room-temperature photoluminescence(PL) of Mn-doped ZnO thin films were studied.The chemical compositions were examined by energy dispersive X-ray spectroscopy(EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry(XPS).From the X-ray diffraction(XRD) data of the samples,it can be found that Mn doping does not change the orientation of ZnO thin films.All the films prepared have a wurtzite stru...     

基于虚拟仪器技术的金属磁记忆检测与故障诊断系统

以铁磁性杆件为对象建立模型,从理论上研究了金属磁记忆的检测和故障诊断方法,并设计了以虚拟仪器技术为基础的金属磁记忆的检测和故障诊断系统,采用小波变换对传感器输入信号进行处理,消除噪声干扰。实现了离线或在线检测与诊断,有效地判断出受载试件上的应力集中部位,找出了应力集中线的位置。     

High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn‐Doped SiGe Thin Films

Diluted magnetic semiconductors based on group‐IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn‐doped SiGe thin films are first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing (RTA). After the RTA, the samples become ferromagnetic semiconductors, in which the Curie temperature increases with increasing Mn doping concentration and reaches 280 K with 5% Mn concentration. The data suggest that the ferromagnetism comes from the hole‐mediated process and is enhanced by the tensile strain in the SiGe crystals. Meanwhile, the Hall effect measurement up to 33 T to eliminate the influence of anomalous Hall effect reveals that the hole mobility of the annealed samples is greatly enhanced and the maximal value is ≈1000 cm² V^?1 s^?1, owing to the tensile strain‐induced band structure modulation. The Mn‐doped SiGe thin films with high Curie temperature ferromagnetism and high hole mobility may provide a promising platform for semiconductor spintronics.