基片温度对Co掺杂ZnO薄膜室温铁磁性的影响

采用磁控共溅射法在Al2O3(0001)基片上沉积了Zn1-xCoxO(x=0.08～0.3%)薄膜,研究了基片温度对Co掺杂ZnO薄膜结构和磁性的影响.结果表明:Al2O3(001)基片很好地诱导了ZnCoO薄膜(002)取向生长,并且所有的薄膜均显示室温铁磁性.较低的基片温度不仅能有效抑制薄膜中Co2O3杂质相的产生,而且薄膜磁矩较大.紫外-可见光谱也表明,薄膜中Co2 取代了ZnO中Zn2 的位置.     

自燃烧法合成的ZnO基稀磁半导体纳米颗粒研究进展

稀磁半导体制备方法与磁性起源的研究是当前凝聚态物理的一项热门课题.首先介绍了自燃烧合成法的原理和优点,然后以Co和Mn掺杂ZnO为重点,总结了国内外采用自燃烧法合成的ZnO基稀磁半导体纳米颗粒晶体结构、磁性能相关的研究进展,讨论了所得纳米颗粒磁性能的内在物理机制.通过对自燃烧法合成的更宽掺杂范围ZnO基稀磁半导体纳米颗粒的研究,使我们能够更加系统地了解过渡金属掺杂ZnO材料的结构与磁性能,并探讨所得实验现象的内在物理机制.     

Magnetism and phase-transitional analysis of nano-metal gadolinium

The structures,grain sizes and magnetism were analyzed and computed for three typical samples:the stock of polycrystalline metal Gd(sample 1),the bulk nanocrystalline Gd prepared by spark plasma sintering(SPS) technique and subjected to the annealing process of 623 K for 0.5 h(sample 2) and the bulk nanocrystalline Gd prepared by the SPS technique at 573 K(sample 3).The computation results indicated that the sample 3 had the efficiency of space filling up to 99.38%.The computation results of magnetization i...     

基于GaAs的新型稀磁半导体材料(Ga,Mn)As

介绍了一种基于 Ga As的新型稀磁半导体材料 ( Ga,Mn) As,包括 ( Ga,Mn) As的制备方法、结构特性、磁性质及磁输运性质。最后 ,展望了 ( Ga,Mn) As的应用前景     

Synthesis of Ultrathin Metallic MTe2 (M = V,Nb, Ta) Single‐Crystalline Nanoplates

Two‐dimensional materials with intrinsic magnetism have recently drawn intense interest for both the fundamental studies and potential technological applications. However, the studies to date have been largely limited to mechanically exfoliated materials. Herein, an atmospheric pressure chemical vapor deposition route to ultrathin group VB metal telluride MTe₂ (M = V, Nb, Ta) nanoplates with thickness as thin as 3 nm is reported. It is shown that the resulting nanoplates can be systematically evolved from mostly thicker hexagonal domains to thinner triangular domains with an increasing flow rate of the carrier gas. X‐ray diffraction and transmission electron microscopy studies reveal MTe₂ (M = V, Nb, Ta) nanoplates are high‐quality single crystals. High‐resolution scanning transmission electron microscope imaging reveals the VTe₂ and NbTe₂ nanoplates adopt the hexagonal 1T phase and the TaTe₂ nanoplates show a monoclinic distorted 1T phase. Electronic transport studies show that MTe₂ single crystals exhibit metallic behavior. Magnetic measurements show that VTe₂ and NbTe₂ exhibit ferromagnetism and TaTe₂ shows paramagnetic behavior. The preparation of ultrathin few‐layered MTe₂ nanoplates will open up exciting opportunities for the burgeoning field of spintronics, sensors, and magneto‐optoelectronics.     

质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响

采用电感耦合等离子体增强物理气相沉积法制备了Yb掺杂ZnO薄膜, 并采用不同剂量质子对薄膜进行了辐照实验, 重点采用X射线衍射、光电子能谱、正电子湮灭图谱和磁测量系统对Zn_0.985Yb_0.015O薄膜的缺陷和磁性能进行了研究。磁性测试结果表明: Zn_0.985Yb_0.015O薄膜经质子辐照后其饱和磁化强度随辐照剂量的增加逐渐增大, 当辐照剂量为6 × 10¹⁵ ions/cm²时, 其饱和磁化强度达到最大, 随着辐照剂量的进一步增加, 其饱和磁化强度反而变小。正电子湮灭图谱结果显示薄膜中主要存在锌空位相关的缺陷, 并且锌空位相关的缺陷随辐照剂量的变化与饱和磁化强度随辐照剂量的变化相一致。本研究从实验上揭示了在含有各种缺陷的Yb掺杂ZnO薄膜中, 锌空位缺陷是影响质子辐照Zn_0.985Yb_0.015O薄膜磁性的主要原因。     

Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering

The microstructural,optical,and magnetic properties and room-temperature photoluminescence(PL) of Mn-doped ZnO thin films were studied.The chemical compositions were examined by energy dispersive X-ray spectroscopy(EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry(XPS).From the X-ray diffraction(XRD) data of the samples,it can be found that Mn doping does not change the orientation of ZnO thin films.All the films prepared have a wurtzite stru...