论钱学森的大成智慧学

文章强调 "大成智慧学"是新世纪的需要, "大成智慧"的核心是科学技术与哲学的结合。为此,不仅要利用人-机结合的思维体系,下苦功夫掌握广博的知识、经验、信息,还要从实际出发,实事求是,善于思考,反复实践,努力树立起反映新世纪的世界观、人生观、科学观、方法论。     

Specific Heat of LaMnO3 + δ at 50 K ≤ T ≤ 160 K

We have developed a shell model, which includes the long-range coulomb, van der Waals interaction, and the short-range Hafemeister–Flygare repulsive interaction operative up to second neighbor atom to study the cohesive and thermal properties of LaMnO_{3 +} . The results on cohesive energy obtained by us are in good agreement with that of calculated value by DeSouza et. al. (R. A. DeSouza, M. S. Islam, and E. I. Tiffee, J. Mater. Chem. 9, 1621 (1999)). In addition, we have also calculated molecular force constant (f), compressibility (), restrahlen frequency (_o), Debye temperature (_D), and the low temperature specific heat at 50 K T 160 K. Our results on Debye temperature and specific heat for the temperature range 50 K T 160 K are closer to the recently measured data with an automated quasi-adiabatic pulse technique.     

Mn基钙钛矿样品庞磁电阻效应的Monte Carlo模拟

基于顺磁性绝缘体和铁磁金属两相随机分布的假设，对居里温度Tc分别为330K和250K的La2／3Ba1／3MnO3和Laa2/3Ca1／3MnO3两个典型样品的电阻随温度和磁场的变化进行了Monte Carlo模拟，模拟曲线在行为上相同于文献上普遍报道的实验曲线。研究表明，Mn基钙钛矿样品中Tc附近观察到的庞磁电阻是由于磁场引起Tc附近铁磁金属相体积分数的实质性增加所致。     

真空热处理对CoFe薄膜结构及电磁特性的影响

在本底真空度优于5×10-4Pa的室温条件下,利用电子束蒸发方法沉积CoFe薄膜,研究了不同退火温度对CoFe薄膜结构和电磁特性的影响。样品采用热氧化Si为基片,在3×10-5Pa真空度下分别进行了150、280、330、450和500℃的60min退火处理。电阻率和磁电阻测量表明,450℃退火处理能够明显降低CoFe薄膜电阻率和提高磁电阻变化率,因为这时的X射线衍射谱显示CoFe薄膜的结构已明显改善。还发现沉积在热氧化Si基片上的CoFe薄膜(111)晶面面间距明显小于靶材相应晶面面间距,而退火处理会使薄膜(111)晶面面间距接近恢复到靶材。透射电镜对沉积态样品分析表明,样品呈多晶结构但结晶不太理想。振动样品磁强计(VSM)的磁特性测量发现,500℃真空退火处理,薄膜的矫顽力和饱和磁化强度都提高近一倍,分别由室温沉积态的2337 A/m和327 emu/cm3上升到退火后的4746 A/m和649 emu/cm3。     

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

Extended defects on the top surface of a 250-μm-thick free-standing GaN sample, grown by hydride vapor phase epitaxy (HVPE), were studied by deep level transient spectroscopy (DLTS) and scanning surface potential microscopy (SSPM). For comparison, similar studies were carried out on as-grown HVPE-GaN samples. In addition to the commonly observed traps in as-grown HVPE-GaN, the DLTS measurements on free-standing GaN reveal a very high concentration of deep traps (∼1.0 eV) within about 300 nm of the surface. These traps show nonexponential capture kinetics, reminiscent of those associated with large defects, that can accumulate multiple charges. The SSPM measurements clearly reveal the presence of charged microcracks on the top surface of the sample. It appears that the “giant traps” may be associated with these microcracks, but we cannot rule out the involvement of other extended defects associated with the near-surface damage caused by the polishing/etching procedure.     

Transport Property of La0.67-xSmxSr0.33MnO3 at Heavy Samarium Doping (0.40≤x≤0.60)

The influence of heavy samarion (Sm) doping(0.40≤x≤0.60) on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature (M～T) curves, magnetization-magnetic density (M～H) curves, resistivity-temperature(ρ-T) curves and magnetoresistivity-temperature(MR～T) curves of the samples under different temperatures.It is found that, with the increase of Sm doping amount, the samples transform from long-range ferromagnetic order to spin-cluster glass state and anti-ferromagnetic state;and when x=0.60, the transport property becomes abnormal under magnetic background;and the magnetic structure changes and extra magnetic coupling induced by doping leads to colossal magnetoresistance effect.The transport mechanism of metallic conduction at low temperature is mainly electron-magneton interaction and can be fitted by the formula ρ=ρ0 AT4.5, and the insulator-like transport mechanism on high temperature range is mainly the function of variable-range hopping and can be fitted by the formula ρ=ρ0exp(T0/T)1/4.In the formulas above, ρ is resistivity, T is temperature, and A, ρ0, T0 are constants.     

多晶La0.85Na0.17MnOz晶界间自旋相关的输运性质

实验研究了晶粒间弱连接和致密连接的La0.85Na0.17MnOz多晶样品的电磁性质,发现弱连接的样品和致密连接的样品在居里温度以下的输运性质显著不同,弱连接的样品从居里温度到77 K在低场下具有较大的磁电阻,而致密连接的样品在低温的磁电阻几乎为零.结合低温下的电阻率与外磁场的关系,可以得出,晶粒间的自旋相关的隧道效应对低温的低场磁电阻起着重要作用.     

从复杂性的角度分析供应链管理问题

供应链是企业适应市场环境变化而产生的运作模式,也是企业之间竞争与协同发展的产物。供应链是由多个企业组成的复杂供需网络,因此它属于开放的复杂巨系统的范畴,而处理开放的复杂巨系统的有效方法是综合集成研讨体系。该文首先介绍了复杂性的研究情况;分析了供应链的复杂性;指出供应链是一个开放的复杂巨系统;提出用综合集成研讨厅体系的思想研究供应链管理问题,为供应链管理问题的研究提供了一个新的思路。     

Giant magnetoresistance effect in Ni buffered Co/Cu/Co sandwich

The effects of Ni buffer layer on the giant magnetoresistance structure of Co/Cu/Co sandwich are investigated systematically in this paper. It is found that Ni buffer layer can induce the crystallization of the lower Ni/Co layer and produce small coercivity, thus enlarging the difference in the magnetic behavior between the two magnetic layers in the sandwich. Moreover, the use of the Ni buffer layer can also improve the interface flatness in the sandwich. All these factors enhance the sensitivity of the Ni buffered sandwich.     

Photo-Induced Effect of the Electron-Spin Resonance on the Charge-Ordered State in Pr0.65Ca0.35MnO3

Electron-spin resonance (ESR) for the charge-ordered state in well-characterized Pr_0.65Ca_0.35MnO₃ exhibited significant change of both the absorption profile and the effective spin susceptibility upon injection of laser light with photon energy of 1.17 eV provided by Nd-YAG laser. The increase of the effective spin susceptibility was clearly found out thanks to the injection of photons in the temperature range 90 K–80 K, which is below the transition temperature from the antiferromagnetic charge ordered state to the canted antiferromagnetic spin alternation state, T _CAF125 K. The temperature dependence of the change of the ESR profile excludes the possibility of heating by laser light. The present result suggests that a kind of photo-induced insulator–metal transition may occur due to propagation of the delocalized carriers via probable double exchange interaction in the charge-ordering collapsed state created by the injection of photons.