Systematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory

Van der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non-volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The non-volatile memory behavior of 2D materials has mainly been studied for single-bit operation, and there is growing interest in expanding to multi-bit operation to enhance the storage capacities of memory devices. However, the conditions or rules for generating the desired number of bits in 2D-based multi-bit memory remain to be identified. In this study, multiple bits are successfully created on non-volatile memory based on vdW heterostructure floating-gate memory (FGM) by systematically tuning the dimensions of the 2D materials. In particular, a fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered-material-based vdW FGMs.     

hBN石墨化指数对可磨耗涂层材料烧损率的影响

本文对比分析了三种不同石墨化指数 (G.I.) 的六方氮化硼 (hBN) 原料制备的镍基氮化硼复合粉末材料及 封严涂层喷涂过程中 hBN 烧损率。 结果表明, hBN 石墨化指数越低, 所制备涂层材料在热喷涂过程中的损失率 越低, 涂层中氮化硼组分含量越高, 当 hBN 石墨化指数为 1.26 时, 涂层中 hBN 含量为 4.96%, 较粉末减少了 21.14%, 所制备涂层硬度最低, 为 62.0 HR15Y, 该涂层在 815 ℃下可磨耗性能良好。     

A Study of Encapsulation Resin Containing Hexagonal Boron Nitride (hBN) as Inorganic Filler

Preparation and property characterization of encapsulation resin contained hexagonal boron nitride (hBN) as inorganic filler were carried out in this work. The dielectric properties, coefficient of thermal expansion (CTE), thermal conductivity, curing kinetics, adhesion strength and viscosity of the resins with the load of hBN filler ranging from 9.2 to 25.7 vol.% (20–70 wt.%) were evaluated. It was found that the dielectric properties of resin containing SiO₂ filler are inferior to that containing hBN. Also, the resins possessed lower CTE and the higher T _g when the hBN contents were high (>15 vol.%) and the resin containing 25.7 vol.% hBN exhibited the largest thermal conductivity of 1.08 W/m K. Adhesion strength of the composite resins decreased with increase of hBN content and the adhesion strength on various substrates was found to be in the order of: alumina > Si wafer > eutectic PbSn solder. An erratum to this article can be found at     

Design of the magnetic homonuclear bonds boron nitride nanosheets using DFT methods

Design and characterization of the structural, electronic, and magnetic properties of armchair boron-nitride, BN (B₂₇N₂₇H₁₈), nanosheets were performed by means of density functional theory all-electron calculations. The HSEh1PBE-GGA method together with 6-31G(d) basis sets were used. Non-stoichiometric B₃₀N₂₄H₁₈ and B₂₄N₃₀H₁₈ compositions: rich in boron or nitrogen atoms, forming homonuclear B or N bonds, respectively, were chosen. The obtained results reveal that these BN nanosheets reach structural stability in the anionic form, where semiconductor and magnetic behaviors are promoted. Effectively, the HOMO-LUMO gap is of 2.03 and 2.39 eV, respectively and the magnetic moments are of 1.0 magneton bohrs, coming from the boron atoms in both systems. The rich in boron nanosheets present high-polarity, either in the gas phase or embedded in aqueous mediums like water, as well as low chemical reactivity, signifying potential applicability in the transportation of pharmaceutical species in biological mediums. These systems are also promising for the design of electronic devices, because they possess low-work functions, mainly arising from the homonuclear boron or nitrogen bond formation.