非掺杂InP的低温光致发光研究

研究了2K低温下非有意掺杂InP单晶的光致发光谱,对近带边的辐射跃迁进行了仔细分析,报道了InP单晶在大功率光激发时束缚于中性施主的激子跃迁发光相对减弱、而束缚于中性受主的激子跃迁发光相对增强的现象,并探讨了其机制,确认了材料中存在Mg、Zn等残余受主杂质,并计算得到Mg受主的离化能为41.5meV.     

硅铁生产中杂质元素的控制

分析了硅铁生产中Al、Ca、C、Ti等主要杂质元素的来源，并相应采取精料入炉、炉外精炼、重熔和控制浇铸温度等方法进行控制，在降低硅铁杂质含量上取得较好效果。     

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Fluorescent photon down conversion for the improvement of the blue response of ZnO/CdS/Cu(In,Ga)Se₂ heterojunction solar cells and modules is investigated. Fluorescent dyes of the series Lumogen® F are analyzed by optical transmission and reflection as well as by photoluminescence measurements. A spectral transfer matrix formalism is introduced that allows to predict the suitability of a luminescent dye as a down-converter for a given solar cell from its absorption/emission properties. We find that Lumogen® F Violet 570 and Lumogen® F Yellow 083 as well as a combination of both yields improvements for Cu(In,Ga)Se₂ solar modules. Particularly, we find that the short circuit current density of a Cu(In,Ga)Se₂ mini-module is improved by 1.5 mA cm^− 2 when applying a varnish with a combination of Lumogen® F Violet and Yellow. About 0.5 mA cm^− 2 of this improvement is due to a reduced overall reflectance and an improvement of 1 mA cm^− 2 results from the frequency conversion by the dyes.     

Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells

The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.     

Effect of Hydrogen Heat Treatment on the Chemical Composition of Aluminum Nitride Powder

The effect of hydrogen heat treatment on impurity contents in aluminum nitride powder of different fineness is studied. Thermodynamic calculations are provided pointing to the possibility of forming gaseous hydrogen compounds with impurity elements. It is established that as a result of treatment the contents of impurity elements, i.e. oxygen, carbon, sulfur, are reduced by a factor of 3-13. The optimum hydrogen heat treatment regime is determined: a temperature of 1323 K and an exposure time of 30 min.     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Magnetic properties of high-temperature superconductors: Analysis within the framework of the impurity mechanism

The impurity mechanism proposed earlier is used to interpret the magnetic properties of hightemperature superconductors. The appearance of superconductive granules and the existence of weak bonds in grains of ceramics and in single crystals is explained. The irreversibility line is obtained and its new interpretation as the line of thresholds of appearance of infinite nonsuperconductive cluster is given. The relaxation time of the magnetic susceptibility in alternating magnetic fields is calculated. The decrease of the Meissner fraction with increase in magnetic field and decrease in doping, and other magnetic properties are explained.     

应用光度分析法测定铁和渣中的微量镓

用光度分析法测定镓，为适应多种试样的测定，补做了个别条件试验。用该方法测定了铁、渣、浸钒渣等六种不同类型试样中镓的含量，分析其精度精度符合要求。     

GaAsP混晶中Fe杂质能级的无序分裂

GaAsP混晶中Fe杂质基态与激发态的光离化截面的幅度比S(x)随组分x有规律地变化,本文提出一种理论估算,认为它是Fe能级无序分裂的结果.     

用熔融还原的方法从浸钒渣中提镓——碳饱和情况下的熔融还原过程

用通用旋转组合设计的方法得到了浸钒渣在饱和碳的熔融还原过程中镓的还原提取率与温度,时间及CaO的加入量关系的非线性数学模型。用非线性优化的方法并综合考虑Fe,Mn的回收,得到了最优的工艺条件及结果;用Langmuir—Knudsen方程推算了镓在铁液中的理论挥发量与时间的关系,与由本模型得到的关系式是一致的。