Characteristics of GdGaO grown by MBE

Ga₂O₃/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga₂O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS).     

单晶生长用AlN粉料的烧结提纯工艺实验研究

使用自主研发的钨系统中频感应加热炉对AlN粉料进行了烧结提纯处理实验,并用XRD、SEM、IGA和GDMS等表征方法分析了烧结后的样品.实验发现,高温(2 250℃)长时间(50 h)烧结提纯工艺效果显著,但AlN粉料损耗高达47.37％;而低温(小于2 000℃)分段式短时间(每段10h)烧结提纯工艺粉料损耗低于2％,但是提纯效果一般.通过对实验结果的综合分析,提出了一种AlN粉料烧结提纯的改进工艺,最终得到了氧含量仅238 ppm、碳含量135 ppm的高质量AlN单晶生长原料,并且显著增加了原料的利用率.     

Synthesis of the [Ga]-MFI under atmospheric pressure

The crystallization of the [Ga]-MFI was investigated as a function of synthesis time under atmospheric pressure. The molar composition of the reactants was 100SiO₂-Ga₂O₃-llNa₂O-llTPABr-3500H₂O. The crystallinity of the [Ga]-MFT was examined by using several analytical instruments, such as XRD, XPS, XRF, FT-IR, solid-statemas-NMR, DTG/DTA, and SEM. The [Ga]-MFI was successfully synthesized under atmospheric pressure at 97 ‡C in 72 h. It was found that the nucleation of the [Ga]-MFI took a quite long time, but the crystallization took place very fast. It is supposed that nucleation is the rate-controlling step in the [Ga]-MFI synthesis under atmospheric pressure. Consequently, if the induction period of the nucleation can be shortened, it would be possible to synthesize the [Ga]-MFI commercially under atmospheric pressure.     

洁净钢制备技术的研究现状及发展

介绍了洁净钢制备技术研究现状,包括生产工艺、钢中杂质元素(S、P、O、N、H)的去除和非金属夹杂物的控制,对于洁净钢的未来发展趋势也进行了展望。     

SnO2透明电热膜成膜研究

研究了在化学喷射法制备ＳｎＯ２透明电热膜中，掺杂浓度、反应温度、退火工艺及喷射参数对电热膜光电性能的影响。结果表明在４００～６００℃、Ｓｂ３＋掺杂浓度在０１％～０４％之间，可获得透光率＞８５％，面电阻１００～１５０Ω的ＳｎＯ２透明电热膜。     

Pressure Effect in High-Temperature Superconductors and Fullerides

The explanation for the pressure effect in high-temperature superconductors and fullerides is offered. Besides the dependence of the pressure derivative of the critical temperature T _c on doping, the direct dependence of T _c on pressure and the universal dependence of the relative change of T _c ^max–T _c with pressure are obtained for high-temperature superconductors. The unity of the model of the pressure effect in high-temperature superconductors and fullerides is justified. The dependence of T _c on the lattice constant and the connection between the pressure effect and the chemical pressure effect in fullerides are discussed.     

Cu(In,Ga)3Se5薄膜的结构及其缺陷研究

讨论了Ga含量对四元有序缺陷化合物Cu(In,Ga)3Se5薄膜结构的影响.Ga含量的增加引起晶格扭曲系数η近似按抛物线形式增加,而其晶格常数a与c呈线性减小趋势,同时(112),(220)/(204)等主衍射峰的位置和强度呈现显著的改变.而样品厚度的改变会导致薄膜中存在不同的内应力,最终对薄膜的结构产生了显著影响.     

Direct and Simultaneous Determination of Several Impurity Elements in Manganese Tetroxide using ICP-AES

1 IntroductionManganic mine resource is Chinese particular re-source,only fewcountries have manganic mine resourceinthe world. Manganese tetroxide whichis made of puremanganese is an important high-tech product that hasbeenregarded as a kind of combat readiness material inseveral countries[1 ,2]. Manganese tetroxide with a highpure and high specific surface area has been ranked inproject of high tech industrialization with preferential de-velopment andsupportinspecial purpose electron material…