超级微波消解-碰撞池-电感耦合等离子体质谱法测定氮化铝粉中钠钨铁锌钛锰

作为制备氮化铝材料的原料,氮化铝粉体中的杂质金属元素含量会对氮化铝制品的导热和介电性能产生重要影响。实验采用硫磷混酸以超级微波消解法处理样品,解决了氮化铝粉难以溶解完全的问题。选择²³Na、¹⁸²W、⁵⁴Fe、⁶⁶Zn、⁴⁶Ti和⁵⁵Mn为待测同位素,控制氦气流量为1.52 mL/min、以氦气碰撞池模式(CCT mode)消除质谱干扰,用50 μg/L ⁸⁹Y校正²³Na、⁵⁴Fe、⁶⁶Zn、⁴⁶Ti、⁵⁵Mn,用50 μg/L ¹⁸⁵Re校正¹⁸²W,建立了碰撞池-电感耦合等离子体质谱法(ICP-MS)测定钠、钨、铁、锌、钛、锰6种杂质金属元素的方法。在优化的实验条件下,6种元素的检出限为0.03~0.64 mg/kg,定量限为0.10~2.13 mg/kg。采用实验方法对氮化铝粉样品进行测定,6种元素测定结果的相对标准偏差(RSD,n=6)均小于4%,加标回收率为96%~103%。采用电感耦合等离子体原子发射光谱法(ICP-AES)和石墨炉原子吸收光谱法进行方法对照试验,测定结果与实验方法基本一致。     

Deep traps in GaAs revealed at high resolution by simple fast photocapacitance methods

The characteristics of a new type of capacitance spectroscopy of deep traps in semiconductors are reviewed. A double radiation source technique is employed, the first source controlling the occupation of the traps and the characteristic time constant of the experiment, the second probing the spectral distribution of traps by selectively photoinducing emission to the conduction and valence bands. Time differentiation enhances the detectivity of the traps and minimizes drift problems. Typical spectra obtained with this quasi-equilibrium spectroscopic technique are described. The chromium trap in GaAs presents a distinctive feature with interesting properties which are discussed. Comparisons with thermal capacitance measurements are made, showing the complementary nature of the two methods. The use of the technique to detect out-diffusion of Cr from an insulating substrate into an epitaxial layer is described.     

HT-6M托卡马克杂质输运行为研究

以HT -6M托卡马克在欧姆加热条件下的氧、碳杂质空间分布的实际测量结果及该装置背景等离子体的具体特征为基础 ,建立起杂质输运分析程序 ,并由此展开模拟分析 .结果表明 ,该装置氧、碳杂质的浓度分别为 5 %ne和 3 %ne(ne为电子密度 ) ,杂质输运行为是反常的 ;扩散系数为 2 0m2 ·s- 1,有效电荷数Zeff接近 4     

拟薄水铝石生产中降低新水消耗的措施

针对碳化法生产拟薄水铝石新水消耗高的状况，提出了改进措旌。     

A review of ion beam induced charge microscopy

Since its development in the early 1990’s, ion beam induced charge (IBIC) microscopy has found widespread applications in many microprobe laboratories for the analysis of microelectronic devices, dislocations, semiconductor radiation detectors, semi-insulating materials, high power transistors, charge-coupled arrays, solar cells, light emitting diodes, and in conjunction with Single Event Upset imaging. Several modalities of the techniques have been developed, such as lateral IBIC and time-resolved IBIC. The theoretical model of IBIC generation and collection has developed from a one-dimensional model of charge drift and diffusion to a detailed model of the motion of ion charge carriers in semiconductors and insulators. This paper reviews the current state-of-the-art of IBIC theory and applications.     

斯特里特工业（印度）有限公司Chinchpada精炼厂的电解液杂质控制

本文探讨了斯特里特（Sterlite）铜精炼厂在电解液杂质控制方面所采用的各种操作实践和工艺，重点放在对电解液中的铋、锑、镍和铁的控制。文中谈到如何通过逐步提高砷的浓度来控制电解液中的铋和锑，通过观察发现，当电解液中的砷含量达到一个临界值时，铋和锑进入阳极泥。采用现代低成本酸净化系统控制电解液中镍和铁的浓度是非常重要的。这种新方法与排出液流处理设备一起使用，能够保证对硫酸进行回收、除去电解液中的镍和铁，产出可处理的镍泥，且确保对环境的零排放。     

Crystal Growth and Properties of Co2+ doped Y3Sc2Ga3O12 Single Crystal

Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to φ20×40mm3 and undoped YSGG crystal with the dimensions up to φ28×60mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.     

发射光谱法测定二氧化碲中的杂质元素

采用发射光谱粉末法同时测定二氧化碲Pb、Mn、Ba、Sn、Fe、Co、Ti、Cd、Cr、Al、Ca、Si、B、Bi、V、Ni、Sb、Zn、Ag、Mg、Cu18个金属元素，选择石墨作载体，直接压样于石墨电极中，简单，快速而准确。其回收率在80%-120%范围内，相对标准偏差小于8%，用于样品的测定取得了满意的结果。     

氮化ZnO/Ga2O3薄膜合成GaN纳米管

利用射频磁控溅射法在Si(111)衬底上先溅射ZnO中间层,接着溅射Ga2O3 薄膜,然后ZnO/Ga2O3薄膜在管式炉中常压下通氨气进行氮化,高温下ZnO层在氨气的气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米管.X射线衍射(XRD)测量结果表明利用该方法制备的GaN具有沿c轴方向择优生长的六角纤锌矿结构.利用傅里叶红外光谱(FTIR)研究了所制备样品的光学性质.利用透射电子显微镜(TEM)和选区电子衍射(SAED)观测了样品的形貌和晶格结构.