原料中杂质对丙烯与苯烷基化催化剂性能的影响

分析了原料中杂质对催化剂活性和稳定性的影响及脱除杂质的方法。不同来源的丙烯所含杂质不同 ,炼厂丙烯杂质主要是氮化物和双烯 ,而裂解丙烯杂质主要是双烯 ;苯的主要杂质是饱和烷烃和微量水 ,这些杂质对催化剂活性和稳定性都有影响。实验结果表明 ,杂质含量越高 ,催化剂的活性和稳定性越低 ,而采用强酸性阳离子交换树脂可以脱除丙烯中的杂质。     

聚氯乙烯中杂质粒子的产生原因及解决措施

通过分析聚氯乙烯树脂中杂质粒子产生的主要原因，提出了在采购、保管、生产、清理、分析等环节的解决措施。     

PVC树脂中杂质粒子的来源及消除方法

系统地分析了PVC树脂中杂质粒子的来源和产生原因，提出了解决的方法。杂质粒子与所用原材料、设备、工艺、聚合配方组分及氯乙烯单体中的铁化合物有关。在配方中全用聚乙烯醇做悬浮剂时由于反应前后浓度变化大而容易产生自聚物和粘釜物而增加杂质粒子，加入少量纤雏素可稳定悬浮剂浓度。单体含酸含水所产生的铁锈与氯化铁形成有色胶状物是杂质粒子的重要来源，采用在合成工段滴加碱溶液的方法消除酸和氯化铁，避免胶状物的产生。     

Performance of solvothermally prepared Ga2O3-Al2O3 catalysts for SCR of NO with methane

The solvothermal reaction of mixtures of aluminum isopropoxide (AIP) and gallium acetylacetonate (Ga(acac)₃) directly yielded the mixed oxides of γ-Ga₂O₃-Al₂O₃. In the solvothermal synthesis, the crystal structure of mixed oxides was controlled by the initial formation of γ-Ga₂O₃ nuclei. The mixed oxides prepared in diethylenetriamine have extremely high activities for selective catalytic reduction (SCR) of NO with methane as a reducing agent. With increasing crystallite size of the spinel structure, the catalytic activity increased. The ratio of the amount of methane consumed by combustion to total methane conversion was proportional to the density of acid sites on the surface of the mixed oxides. The mixed oxide catalysts prepared in diethylenetriamine had lower densities of acid sites and showed a higher methane-efficiency for CH₄-SCR than those prepared in other solvents. These catalysts maintained their high activity even when the reaction was carried out under the severe conditions (i.e., high space velocity and low NO concentration).     

Preliminary investigation for the production of wet-process phosphoric acid from Saudi phosphate ores

This paper represents the first published report of a preliminary investigation of the possibility of using Saudi phosphate ores for the production of wet-process phosphoric acid.     

Synthesis of Polycrystalline Yb:Gd_3Ga_5O_(12) Nanopowders by Homogeneous Precipitation Method

The Ytterbium doped gadolinium gallium garnet [Yb3+:Gd3Ga5O12, Yb:GGG] precursor powders were synthesized via homogeneous precipitation method using Yb2O3, Ga2O3, Gd2O3 and ammonium bicarbonate [NH4HCO3] as precipitator, and ammonium sulfate [(NH4)2SO4] as additive. The evolution of phase composition and micro-structure of the powders were characterized by TG- DTA, XRD, IR, and TEM. The results indicate that all precursor powders completely transform to Yb:GGG phase by calcining at 900 ℃ for 8 h, the resultant powders are well dispersed and have smaller particle size approximately 80 nm owing to the electrostatic effect.     

The effect of hydrogen on the electronic structure of kink in bcc iron

The electronic structures of kinks in the [100](010) and 1/2[111](−110) edge dislocations in bcc iron containing hydrogen are investigated by means of the first-principles DMol method and the discrete variational method. The effects of hydrogen on the kinks are discussed. The results show that hydrogen forms weak bonding states with its neighboring host atoms, and since hydrogen draws charge from its neighboring host atoms, the interactions between most of the host atoms are weakened compared with those of the corresponding atomic pairs in the clean kinks. This indicates that the migration of kink, i.e. the motion of dislocation, is easier in the doping hydrogen kink than in the clean kink, which may be the solid solution softening effect resulting from the impurity hydrogen. Supported by the National Basic Research Program of China (Grant No. 2006CB605102) and Science Foundation of Central South University of Forestry & Technology (Grant No. 06y016)     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

Relaxations and bonding mechanism of arsenic in-situ impurities in MCT： first-principles study

1 Introduction Mercury cadmium telluride (Hg1?xCdxTe, MCT) is currently one of the most widely used semiconductor materials for infrared detector arrays. It is well known that the applications of the semiconductor materials, especially for Ⅱ-Ⅵ compound…     

电磁分离设备参数对铝硅合金中富铁相杂质分离效果的影响

电磁场发生器是电磁分离的动力来源,分离器是金属熔体的载体,它们的参数直接影响到电磁分离的效果。文中以铝硅合金中的富铁相杂质颗粒为分离对象,利用流动试验研究了磁感应强度、分离通道截面形状和金属熔体回路尺寸对分离效率的影响。试验结果表明,增加磁感应强度、采用平板型分离通道、增大金属熔体回路面积可以改善电磁分离的效果。