Caustic imaging of gallium droplets using mirror electron microscopy

We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field distortions caused by surface topography and/or potential variations are sufficiently large to create caustics in the image contrast. Using a ray-based trajectory method, we consider how a family of rays overlaps to create caustics in the vicinity of the imaging plane of the magnetic objective lens. Such image caustics contain useful information on the surface topography and/or potential, and can be directly related to surface features. Specifically we show how a through-focus series of MEM images can be used to extract the contact angle of a Ga droplet on a GaAs (001) surface.     

基于Gabor滤波器的棉花杂质检测算法

棉花杂质检测方法对于提高织物质量和降低生产成本具有重要意义。针对工业环境中非均匀光照条件下的棉花图像设计基于Gabor滤波器的杂质检测算法,依据Otsu法和形态学滤波将图像分割为前景区、背景区和交界区,然后在图像前景和背景区域内分别使用Gabor滤波器提取图像的纹理特征。设计一种针对Gabor滤波输出的自适应阈值分割算法,结合形态学滤波和连通域分析检测出棉花中的杂质。实验结果表明,本文算法有效地消除了由于光照条件造成的干扰,可以精确地检测出棉花中常见的各种杂质。     

液剂视频序列中运动异物的模糊自适应分割

运动异物的正确分割是实现液剂自动检测的关键.提出一种基于帧差图空间方差和方差梯度的液剂异物模糊自适应阈值分割算法.首先将4帧序列图像差分得到的2幅帧差图分为5×5的图像块,计算2幅帧差图对应图像块间的方差和方差梯度,并以两者的乘积构成新特征图;然后使用自适应阈值对新特征图进行运动异物分割和提取.为使阈值能够跟随图像块灰度变化,阈值的调整采用模糊推理依据方差和方差梯度变化自适应实现.实验及实际测试结果表明,该算法能够满足低对比度和局部光照变化的液剂异物实时检测要求,是一种实用有效的图像分割算法.     

基于LightGBM的EAST杂质破裂预警

对全超导托卡马克核聚变实验装置东方超环(EAST)运行放电期间发生的杂质破裂进行预测对未来的聚变装置的长脉冲稳态放电有重要意义. 根据杂质破裂的物理特性筛选出的2018年的334炮杂质破裂炮数据以及2021年的1628炮非破裂炮作为训练炮, 再由等离子体平衡、密度、电流以及辐射等8种诊断信号组成的训练样本以LightGBM算法训练出杂质破裂预测模型. 实验结果表明LightGBM算法模型可以对杂质破裂进行准确预测(成功预测率96.29%), 非破裂炮的误判率6.87%. 研究结果证明利用LightGBM进行EAST等离子体杂质破裂预警是可行的方案.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

Cu(In,Ga)Se₂-based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se₂ solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se₂ does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances.     

GZO厚度对非晶硅电池中复合背电极的影响

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO :Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明：随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(I_SC)、开路电压(V_OC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.     

Relating time complexity of protein folding simulation to approximations of folding time

Finkelstein and Badretdinov [A.V. Finkelstein, A.Y. Badretdinov, Rate of protein folding near the point of thermodynamic equilibrium between the coil and the most stable chain fold, Fold. Des. 2 (1997) 115-121] approximated the folding time of protein sequences of length n by exp(λ⋅n2/3±χ⋅n1/2/2)ns, where λ and χ are constants close to unity. Recently, Fu and Wang [B. Fu, W. Wang, A ²O(n1−1/d⋅logn) time algorithm for d-dimensional protein folding in the HP-model, in: J. Daz, J. Karhumäki, A. Lepistö, D. Sannella (Eds.), Proceedings of the 31st International Colloquium on Automata, Languages and Programming, in: Lecture Notes in Comput. Sci., vol. 3142, Springer-Verlag, Heidelberg, 2004, pp. 630-644] published an exp(O(n1−1/d)⋅lnn) algorithm for d-dimensional protein folding simulation in the HP-model, which is close to the folding time approximation by Finkelstein and Badretdinov and can be seen as a justification of the HP-model for investigating general complexity issues of protein folding. We propose a stochastic local search procedure that is based on logarithmic simulated annealing. We obtain that after (m/δ)^a⋅D Markov chain transitions the probability to be in a minimum energy conformation is at least 1−δ, where m?b(d)⋅n is the maximum neighbourhood size (b(d) small integer), a is a small constant, and D is the maximum value of the minimum escape height from local minima of the underlying energy landscape. We note that the time bound is instance-specific, and we conjecture D<n1−1/d as a worst case upper bound. We analyse experimentally on selected benchmark problems for the d=2 case.     

Preparation of acidic or bifunctional catalysts by means of straightforward calcination of as-synthesized [Ga]-ZSM-5 zeolites obtained from alkali-free media. Propane aromatization

Propane aromatization (530°C, 1 atm) was used as a reaction model to evaluate the effect of the calcination temperature on the catalytic properties of an as-synthesized [Ga_1.3]-ZSM-5 zeolite obtained from alkali-free media and calcined at two different temperatures: 530°C (C-530) and 750°C (C-750). Results show that in spite of its lower acidity, C-750 is more active and selective toward aromatics than C-530. This is probably due to the fact that at higher temperature the decomposition of organic compounds used during the zeolite synthesis is accompanied by a partial degalliation of the zeolitic support leading to the production of a bifunctional xGa₂O₃ /H-[Ga_y-ZSM-5(2x+y=1.3)catalyst.     

New oxide phosphors for FEDs: Ruddlesden—Popper phases synthesized with IIIB‐group elements

Abstract— A red‐emitting phosphor, SrTiO³:Pr³⁺, for low‐voltage‐type FEDs and VFDs was developed by Futaba Corporation in 1996. The addition of Al or Ga is essential in the preparation of this phosphor because it improves the luminescence efficiency dramatically. For this impurity effect, Futaba Corporation proposed a charge‐compensation mechanism, which was supported by a recent observation of emission lines due to Al³⁺‐Pr³⁺ pairs. In addition, it was found that Al also works as a scavenger of planar defects, presumably SrO thin layers interleaved in the SrTiO³ lattice, by forming strontium aluminates. The latter mechanism suggests the possibility that a similar impurity effect can be found in materials with crystal structures, including alkaline‐earth oxide layers (Ruddlesden‐Popper phases).