受主型杂质对p型单晶硅中少子衰减过程的影响

少子寿命测试技术是监控单晶硅中杂质和缺陷的数量及性质的重要技术手段.基于常规光电导少子寿命测试的基本参数,研究了不同性质的受主型杂质缺陷对太阳电池用p型单晶硅中少子衰减过程的影响,并重点分析了仅存在受主型电子陷阱或复合中心时,少子衰减过程的变化规律;受主型电子陷阱和复合中心并存时,少子衰减过程的变化规律.研究表明:p型单晶硅中仅存在电子陷阱或复合中心时,二者的密度和俘获截面越小,少子寿命越长,且二者均存在一个最小阈值;当二者并存时,少子电子的衰减过程可根据少子寿命值的不同分成不同的衰减区域.     

新型压电晶体La3Ga5SiO14的生长及特性

用提拉法成功地生长了La3Ga5SiO14(LGS)单晶,用X-ray粉末衍射证明了其单晶结构,测得沿Y、Z方向的热膨胀系数分别为5×10-6 K-1、3.8×10-6 K-1,在453.15 K时测得晶体的比热为0.90 J/g*K,并在200～ 800 nm之间测其透过谱,测得了其全部压电及弹性常数.     

Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

We employed AgNO₃ solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg_0.78Cd_0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO₃ solution at room temperature. The typical carrier concentrations of holes was 3 × 10¹⁶ cm⁻³ at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size. This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and the high quantum efficiency of the photodiode.     

钛磁铁矿选矿技术研究进展

我国是铁矿资源消费大国,钛磁铁矿源占全国铁矿资源储量的10％以上.本文从钛磁铁矿的工艺矿物学性质、钛磁铁矿选矿工艺、钛磁铁矿精矿提铁降杂及钛磁铁矿选矿过程中元素走向等方面综述了钛磁铁矿的选矿技术研究进展,指出了今后的重点研究方向.     

半导体量子阱和量子线中杂质束缚能的度规法则与维里定理

利用变分法计算了矩形量子线和量子阱中类氢杂质束缚能的度规法则和维里定理值.计算结果表明:的确存在一个参数(杂质有效玻尔半径)可用来完全确定束缚能的值,而不必考虑截面的形状和尺寸;体系的维里定理值并不等于常数,而是随杂质有效玻尔半径变化,在阱宽较小和较大时,维里定理值都趋于2.     

依折麦布环醚杂质的制备及其晶体结构表征

药物杂质与药品的安全性和稳定性密切相关,对药物杂质进行充分研究是药品质量控制的必要过程。依折麦布、尿素在无水乙醇和无水甲醇溶剂中,室温存放可顺利获得依折麦布环醚杂质晶体,该环醚杂质结构经单晶衍射表征。结果显示,晶胞参数a=6.140 7(4),b=7.660 3(5),c=11.145 5(7),α=72.497(5)°,β=99.535(2)°,γ=85.538(5)。属于三斜晶系,P1空间群。     

奥氮平有关物质的合成

为合成奥氮平杂质2-甲基-5,10-二氢-4H-噻吩并[2,3-b][1,5]苯二氮杂-4-酮(杂质Ⅰ),以2-氨基-3-氰基-5-甲基噻吩和2-氟硝基苯为起始原料经亲核取代、还原关环及水解3步反应合成了目标化合物,并用NMR及HR-MS进行结构确证,总收率为44%。此方法简单易行、经济实用,为奥氮平杂质对照品的制备奠定了物质基础。     

不同温度时效后Ni-20Cr-18W-1Mo合金晶界偏聚及力学性能研究

采用扫描电镜(SEM)、透射电镜(TEM)、电子探针(EPMA)和高温力学试验机等手段,研究了不同时效温度(200-800 °C)对Ni-20Cr-18W-1Mo高温合金的元素晶界偏聚和力学性能的影响。结果表明,硫、磷元素的晶界偏聚临界时间随时效温度升高而降低;时效温度对元素在晶界和晶内的成分分布有显著的影响;实验合金的抗拉强度和延伸率随时效温度升高而降低。分析发现,硫、磷元素在晶界中的含量随时效温度升高而增大直至两者分别在650和400 °C时达到峰值,是合金在200-600 °C区间内力学性能降低的重要原因。     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.     

Time‐resolved investigation of Cu(In,Ga)Se2 growth and Ga gradient formation during fast selenisation of metallic precursors

Ga segregation at the backside of Cu(In,Ga)Se₂ solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu–In–Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real‐time synchrotron‐based X‐ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross‐sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In–Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu–In–Ga phase. Surprisingly, CuInSe₂ starts to form at the surface on top of the In–Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga‐rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 min reached conversion efficiencies of up to 14.2 % (total area, without anti‐reflective coating). The evolution of the Cu(In,Ga)Se₂ diffraction signals reveals that the minimum process time for high‐quality Cu(In,Ga)Se₂ absorbers is limited by cation ordering rather than Se incorporation. Copyright © 2014 John Wiley & Sons, Ltd.