Microstructure and electrical conductivity of La0.9Sr0.1 Ga0.8Mg0.2O2.85-Ce0.8Gd0.2O1.9 composite electrolytes for SOFCs

(100-x) wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - x wt.% Ce_0.8Gd_0.2O_1.9 (x = 0, 5, 10, 20) electrolytes were prepared by solid-state reaction. The composition, microstructure, and electrical conductivity of the samples were investigated. At 300 ~ 600°C, the pure La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 electrolyte has a higher conductivity compared to the composite electrolytes, but at 650 ~ 800°C the 95 wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - 5 wt.% Ce_0.8Gd_0.2O_1.9 composite electrolyte presents the highest conductivity, reaching 0.035 S cm⁻¹ at 800°C. The cell performances based on La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85-Ce_0.8Gd_0.2O_1.9 electrolytes were measured using Sr₂CoMoO₆-La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 as anode and Sr₂Co_0.9Mn_0.1NbO₆ -La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 as cathode, respectively. At 800°C, the measured open-circuit voltages are higher than 1.08 V, and the maximum power density and current density of the fuel cell prepared with 95 wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - 5 wt.% Ce_0.8Gd_0.2O_1.9 electrolyte reach 192 mW cm⁻² and 720 mA cm⁻², respectively.     

Structural,elastic, phononic,optical and electronic properties investigation of two-dimensional XIS (X=Al,Ga, In) for photocatalytic water splitting

Two-dimensional (2D) materials have been widely developed due to their attractive properties. Here, by using density functional theory (DFT) calculations, for the first time, we explore potential applications of the novel XIS (X = Al, Ga, In) monolayer 2D materials on photocatalytic water splitting. A series of simulations were carried out to predict and study the structural, elastic, phononic, optical and electronic properties of 2D XIS materials. The results show that GaIS and InIS demonstrate low thermal conductivity. For optical properties, AlIS shows strong light absorption coefficients and refractive index only under ultraviolet (UV) light, while GaIS and InIS show stronger performance under both visible light and UV light with the band edge positions spanned the redox potential of water. The reasonable band positions and bandgaps make them promising photocatalysts for water splitting. This work reveals the potential applications of monolayer 2D XIS in thermal, electronic, and photocatalytic water splitting.     

Performance of C18 Derivatized Silica Gels: A Structure-Performance Study

Abstract

Significant performance differences in the separation of desamido-insulin from insulin and of amitriptyline from imipramine have been found for five, macroscopically similar, preparative C18 silica materials. Structure-performance relations have been used to understand this difference. Physical measurements on the unpacked silica gels as well as chromatographic measurements have been carried out. The latter measurements comprise: hydrophobicity, metal impurity, steric selectivity and silanol activity. The performance difference could not be explained by the difference in hydrophobicity, steric selectivity or metal impurity between the materials. Instead a correlation between the silanol ion exchange activity and the selectivity could be found. The highest performance was found under conditions where the silanol groups have a moderate activity. For the separations considered in this work, the silanol groups have a beneficial effect.     

基于简化SIFT的口服液杂质检测防抖方法

在口服液灯检机杂质检测系统中,口服液瓶体由于履带搓瓶的急停会有轻微的抖动,造成高速工业摄像机拍摄的前后两帧口服液瓶体图像中位于相同空间位置的像素无法重合在一起,导致前后两帧图像做差分结果出现错误。由于口服液中的杂质很小,一般会达到微米级别,因此机械的扰动以及口服液瓶体上的污点都有可能因位置偏差对检测结果造成影响。采用尺度不变特征检测（SIFT）对系统采集的前后两帧图像进行位置配准。SIFT算法稳定性精度很高,适用于高精度口服液杂质检测系统。基于抖动幅度微弱,对该算法进行了一定的改进与简化,以获得最佳配准结果。在实际检测过程中算法稳定,检测结果准确率很高。     

金属正电子核素~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr的PET标记药物研究进展

~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr具备不同的半衰期和特殊生物体内性质,丰富了PET药物的多样性,为疾病的诊断和治疗提供了新的契机。近年来,金属正电子核素~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr标记的药物在正电子发射计算机断层显像(PET)诊断中的应用越来越多,~(64)Cu在乏氧显像中发挥重要作用,~(68)Ga在靶向神经内分泌(NET)类肿瘤的诊断药物领域发展迅速,~(86)Y,~(89)Zr有望在免疫PET和放射免疫治疗领域发挥作用。本文主要综述金属正电子核素~(64)Cu,~(68)Ga,~(86)Y,~(89)Zr的生产与纯化,溶液配位化学以及应用方面的研究进展。     

Effect of enhanced interfacial reaction on the microstructure,phase transformation and mechanical property of Ni–Mn–Ga particles/Mg composites

This study investigated the microstructure, phase transformation and mechanical property of Ni–Mn–Ga particles/Mg composites with a strong interfacial reaction between the particles and the matrix. The strong interfacial reaction was related to the large surface area and energy per unit volume of the flaky shape Ni–Mn–Ga particles that favors the reaction between the particles and matrix. The martensitic transformation behavior was largely weakened due to the interfacial reactions and thus the reduced volume fraction of Ni–Mn–Ga particles. The composites exhibited a much improved compressive strength and ductility in comparison with that of the Ni–Mn–Ga alloy. The compressive plasticity of the composites was decreased when the Ni–Mn–Ga particle content exceeded 40 wt%. In comparison with the Mg-composites with large size Ni–Mn–Ga particles, the composites with small size particles would have a much stronger interfacial reactions, which was detrimental to the phase transformation and mechanical ductility of the composites. The investigation results in this article could provide a reference for the design and preparation of the particles reinforced metal matrix functional composites.     

依折麦布环醚杂质的制备及其晶体结构表征

药物杂质与药品的安全性和稳定性密切相关,对药物杂质进行充分研究是药品质量控制的必要过程。依折麦布、尿素在无水乙醇和无水甲醇溶剂中,室温存放可顺利获得依折麦布环醚杂质晶体,该环醚杂质结构经单晶衍射表征。结果显示,晶胞参数a=6.140 7(4),b=7.660 3(5),c=11.145 5(7),α=72.497(5)°,β=99.535(2)°,γ=85.538(5)。属于三斜晶系,P1空间群。     

奥氮平有关物质的合成

为合成奥氮平杂质2-甲基-5,10-二氢-4H-噻吩并[2,3-b][1,5]苯二氮杂-4-酮(杂质Ⅰ),以2-氨基-3-氰基-5-甲基噻吩和2-氟硝基苯为起始原料经亲核取代、还原关环及水解3步反应合成了目标化合物,并用NMR及HR-MS进行结构确证,总收率为44%。此方法简单易行、经济实用,为奥氮平杂质对照品的制备奠定了物质基础。     

不同温度时效后Ni-20Cr-18W-1Mo合金晶界偏聚及力学性能研究

采用扫描电镜(SEM)、透射电镜(TEM)、电子探针(EPMA)和高温力学试验机等手段,研究了不同时效温度(200-800 °C)对Ni-20Cr-18W-1Mo高温合金的元素晶界偏聚和力学性能的影响。结果表明,硫、磷元素的晶界偏聚临界时间随时效温度升高而降低;时效温度对元素在晶界和晶内的成分分布有显著的影响;实验合金的抗拉强度和延伸率随时效温度升高而降低。分析发现,硫、磷元素在晶界中的含量随时效温度升高而增大直至两者分别在650和400 °C时达到峰值,是合金在200-600 °C区间内力学性能降低的重要原因。     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.