Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads

The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads in the substrate, which was printed with Sn-3.5Ag paste. Joints were fabricated by reflowing the solder paste. In the solder joints fabricated using Au stud bumps, Au-Sn intermetallics spread over the whole joints, and the solder remained randomly island-shaped. The δ-AuSn, ε-AuSn₂, and η-AuSn₄ intermetallic compounds formed sequentially from the Au stud bump. The microstructure of the solder joints did not change significantly even after multiple reflows. The AuSn₄ was the main phase after reflow because of the fast dissolution of Au. In the solder joints fabricated using Cu stud bumps, the scallop-type Cu₆Sn₅ intermetallic was formed only at the Cu interface, and the solder was the main phase. The difference in the microstructure of the solder joints with Au and Cu stud bumps resulted from the dissolution-rate difference of Au and Cu into the solder.     

增强型GaN绝缘栅HEMT线性电荷控制解析模型

基于MIS理论和含极化的泊松方程,应用费米能级与二维电子气密度线性近似,并考虑计入了绝缘体/AlGaN界面的陷阱或离子电荷,导出建立了适用于增强型且兼容耗尽型AlGaN/GaN绝缘栅HEMT的线性电荷控制解析模型。研究表明,Insulator/AlGaN界面陷阱密度在1013cm-2数量级;基于该模型的器件转移特性的理论结果与器件的实测转移特性数据比较符合。该模型可望用于器件性能评估和设计优化。     

Plastic constraint of large aspect ratio solder joints

The aspect ratio (joint area/joint thickness) of thin (0.001-0.006 in.) surface mount solder (60S-40Pb) joints plays an important role in determining the mechanical properties and fracture behavior of the joints. This study demon-strates that plastic constraint of a large aspect ratio 60Sn-40Pb solder joint can develop triaxial (hydrostatic) stresses several times greater than the average tensile strength of the bulk solder material. A four to sixfold increase in average joint stress and up to a tenfold increase in peak stress was measured on joints with aspect ratios ranging from 400 to 1000. Although a direct relationship of the aspect ratio to the average tensile stress is shown, as the Friction Hill model predicts, the observed stress increase is not nearly as high but proportional to the classical prediction. This is attributed to the existence of internal defects (oxide particles and micro-voids) and transverse grain boundaries which fail producing internal free surfaces. Thus, the actual aspect ratio is thickness/d², where d equals the distance between internal surfaces. The fracture of these constrained joints was brittle, with the separation occurring between a tin-rich copper tin intermetallic at the interface and the solder matrix. Voids within the solder joint are shown to relieve the plastic constraint and lower the average tensile stress of the joint. The Friction Hill model may play an important role in explaining the small percentage of atypical solder joint failures which sometimes occur on electronic assemblies. In particular, the sudden failure of a thin joint in a strain controlled environment may be attributed to the development of a large hydrostatic stress component. Therefore, a flaw free, plastically constrained joint which develops a high stress state will be a high risk candidate for failure.     

超高压力传感器绝缘封装薄膜的工艺研究

为了提高锰铜传感器的测压上限,须用薄膜工艺制备无机绝缘三氧化二铝薄膜来作为传感器的绝缘封装层。采用电子束蒸发法,对影响三氧化二铝薄膜的相关工艺如:蒸发原料的纯度、成膜次数进行了研究。最终得出:由99.99%的三氧化二铝原料制备出的薄膜致密性好、缺陷少,其绝缘电阻率和损耗分别可达1012O·cm和103量级;而采用多次间隙蒸发可明显改善薄膜的附着性和致密性。     

梁柱节点不同强度等级混凝土的施工

结合工程施工配合,提出当柱子混凝土强度等级大于梁混凝土强度等级（尤其高层建筑）时的施工方法和施工中应当注意的问题.     

一种有强健的续流开关的新型槽栅逆导IGBT

The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.     

一起隔离开关例行试验的故障分析和处理

对一起高压隔离开关投运前,例行试验发现的隔离开关绝缘套管故障进行分析。考虑实际情况和经验,找出了故障的根源所在,并进行了有效处理,重点阐述了具体处理方法,并提出预防隔离开关故障发生的措施。     

一种提高射频电缆焊接质量的工艺方法

射频连接器与射频电缆被广泛应用于军民品的通信设备中,其关键工序射频电缆芯线与射频连接器插针的连接常采用手钳式阻焊工具。由于射频电缆较细,手钳式阻焊工具在阻焊操作时,要求电装工双手不能抖动,否则易产生废品。通过对手钳式阻焊工具进行技术改进,重新设计了一种预压紧方式的阻焊装置,并通过试验确定了电阻焊接头的结构形式和尺寸,提高了手工阻焊成品率和生产效率,降低了对电装工的技能要求。     

基于2ED020I12-F2的IGBT驱动电路设计

绝缘栅双极型晶体管(IGBT)驱动电路的设计是保证系统可靠运行的重要环节。文中基于英飞凌的磁隔离驱动芯片2ED020I12-F2进行IGBT驱动电路的设计,对2ED020I12-F2的工作过程进行了分析,研究了芯片对IGBT的开通关断及过压过流保护等的工作原理。并运用2ED020I12-F2及其他器件设计了带有变压器隔离与自给电源功能的IGBT驱动电路,且通过实际试验证明了驱动电路设计的正确性与可靠性。     

矢量匹配结合递归卷积法计算GIS外壳辐射场

提出了一种计算气体绝缘变电站（GIS）金属外壳暂态辐射场的新方法：首先运用矢量匹配法对用NEC计算的频域格林函数进行拟合,拟合结果在时域内表示为指数函数和的形式;然后利用递归卷积在时域内直接计算实际输入下的辐射场。该方法不仅可以提高计算精度,降低计算时间,而且克服了快速傅立叶变换存在的不可避免的问题。通过对一125kVGIS金属外壳暂态辐射场计算结果与测量结果的比较,验证了方法的正确性与可行性。