Inherent emf relaxation of electrochemical cells with nanocrystalline Ag electrodes

The open circuit voltage of the electrochemical cell Ag (nano)|solid silver electrolyte|Ag (macro) is found to be inherently unstable. Even under conditions which support the morphological stability of the arrangement of nanocrystalline silver, the particles grow significantly as soon as they function as electrodes; i.e. when they are in contact with a silver electrolyte and connected electronically at the same time. The process is shown to be due to electrochemical Ostwald ripening with the interfacial transfer of Ag⁺ through the Ag/electrolyte interface being the rate limiting step. Its activation energy is 0.01 eV. The decay is in good agreement with modelling results.     

Morphology control of titanium oxides by tetramethylammonium cations in hydrothermal conditions

The effect of tetramethylammonium cations (TMA⁺) on TiO₂ crystal morphology in hydrothermal conditions has been studied. The as-synthesized samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) methods. The morphologies including besom-like particle, nanosheet and nanotube have been observed. The different ways TMA⁺ cations in the hydrothermal bases affect the crystal growth manner are suggested to be responsible for the different morphologies of the as-synthesized samples.     

Prediction of foam growth and its nucleation in free and limited expansion

The influence volume approach (IVA) is often utilized for modeling the mass transfer process dictating bubble growth dynamics in physical foaming. However, the assumed concentration profile in the IVA method is only valid when the changes in dissolved gas concentration are small (less than 5%). In addition, the validity of the IVA method is difficult to justify in chemical foaming applications because of the difficulties involved in defining the dissolved gas concentration profile.In the present work, we define two distinct stages of bubble growth for physical foaming. These two stages are termed as free and limited expansion and are controlled by the bubble nucleation rate. Bubble nucleation is assumed to occur only in the free expansion stage. In this stage, the bubble pressure drops substantially from an initially high pressure in the supersaturated state while the dissolved gas concentration changes very little. The second stage of our two-stage mass transfer model is termed the limited expansion stage and accounts for bubble growth in the late stages of foam evolution, when the pressure changes become small. However, in the limited stage of bubble growth the dissolved gas concentration drops significantly, as the available dissolved gas is depleted. To summarize our two-stage mass transfer model of foam expansion, the pressure difference between the bubble phase and the liquid phase is the primary mechanism for driving mass transfer in the early (free) stages of foam growth and the concentration difference is the driver for bubble growth in the late (limited) stages of growth. The first stage can be regarded as the nucleation stage and it is relatively short; while the second stage can be regarded as the bubble growth stage and is much longer. Most of the bubble volume expansion takes place in the second stage.The concentration gradient at the bubble edge, which is often ignored in other models, is analyzed in detail in this paper. The details of our novel mass transfer model are also presented.     

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from theC-V characteristics. Layers grown from antimony rich melts always exhibitp-type conductivity. In contrast, a type conversion fromp- ton- was observed in layers grown from gallium rich melts below 400 C. The electron mobility of undopedn-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated. Paper presented at the poster session of MRSI AGM VI. Kharagpur. 1995     

Influence of Gaseous Atmosphere on Morphology and Cellular Fatty Acid Composition of Campylobacter jejuni

ABSTRACT: We evaluated the effect of growth environment on morphology and fatty acid (FA) profiles of 2 strains of C ampylobacter jejuni (ATCC 29428 and 33560) grown under various gaseous conditions. Viable counts were determined by plate count and percentages of coccoid cells. FA profiles were measured by gas chromatography. Plate counts were lowest when cultures were grown in air and highest in CO₂ (10%), O₂ (5%), and N₂ (85%). For 29428, percentages of coccoid cells did not differ among treatments. For 33560, percentages of coccoid cells were greater than for 29428 and varied among treatments (13% to 87%). There were no significant ( P > 0.05) relationships between percentages of coccoid cells and amounts of individual or combinations of FA either between or within strains.     

Microstructural change of ultrafine-grained aluminum during high-speed plastic deformation

Effect of strain rate on microstructural change in deformation of the ultrafine grained (UFG) aluminum produced by severe plastic deformation (SPD) was studied. Commercial purity 1100 aluminum sheets were highly strained up to an equivalent strain of 4.8 by the Accumulative Roll-Bonding (ARB) process at ambient temperature. The ARB-processed sheets were found to be filled with pancake-shaped ultrafine grains surrounded by high-angle grain boundaries. The ultrafine grains had a mean grain thickness of 200 nm and a mean grain length of 1100 nm. The ultrafine-grained aluminum sheets were deformed at various strain rates ranging from 2 to 6.0×10⁴ s⁻¹ by conventional rolling, ultra-high-speed rolling, and impact compression. High-speed plastic deformation generates a large amount of heat, inducing coarsening of the ultrafine grains during and after deformation. On the other hand, it was also suggested that high-speed plastic deformation is effective for grain-subdivision, in other words, ultra-grain refinement, if the effect of heat generation is extracted.     

对某自动驾驶仪可靠性增长的试验研究

对某自动驾驶仪可靠性增长工作进行研究,提出了对现役机载电子设备可靠性增长的一些成功、可借鉴的经验。对增长试验过程中发现的问题和管理方面的不足之处,提出一些建议。     

Mathematical models of the VEGF receptor and its role in cancer therapy

We present an analysis of a stochastic model of the vascular endothelial growth factor (VEGF) receptor. This analysis addresses the contribution of ligand-binding-induced oligomerization, activation of src-homology 2 domain-carrying kinases and receptor internalization in the overall behaviour of the VEGF/VEGF receptor (VEGFR) system. The analysis is based upon a generalization of a Wentzel-Kramers-Brillouin (WKB) approximation of the solution of the corresponding master equation. We predict that tumour-mediated overexpression of VEGFRs in the endothelial cells (ECs) of tumour-engulfed vessels leads to an increased sensitivity of the ECs to low concentrations of VEGF, thus endowing the tumour with increased resistance to anti-angiogenic treatment.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Formation reactions of chalcopyrite compounds and the role of sodium doping

The selenisation of the thin film precursors indium, Cu-In and Cu-In-Ga has been studied by in-situ X-ray diffraction. The influence of sodium doping on the kinetics of the solid-state reactions observed agrees with the predictions derived from a phenomenological model presented earlier. In this model a layer of sodium polyselenide is assumed to form at the surface of the precursor, or around each crystal grain. This layer might be responsible for impeded ion exchange in certain solid-state reactions.