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51.
The purpose of this study is to clarify damage process of “Type IV cracking” in weldment of a 2.25Cr-1Mo steel and to propose a micro damage prediction method. From continuous observation under a creep-fatigue test, it was found that spherical shape voids initiated and grew on grain boundaries in fine grain region and these voids grow continuously by changing their shape to crack-like. Both spherical and crack-like void growth rate equations were derived from the proposed void growth model. It was indicated that measured void growth rate under the creep-fatigue loading was well predicted by the growth rate equations.  相似文献   
52.
Crack closure in fibre metal laminates   总被引:1,自引:0,他引:1  
GLARE is a fibre metal laminate (FML) built up of alternating layers of S2-glass/FM94 prepreg and aluminium 2024-T3. The excellent fatigue behaviour of GLARE can be described with a recently published analytical prediction model. This model is based on linear elastic fracture mechanics and the assumption that a similar stress state in the aluminium layers of GLARE and monolithic aluminium result in the same crack growth behaviour. It therefore describes the crack growth with an effective stress intensity factor (SIF) range at the crack tip in the aluminium layers, including the effect of internal residual stress as result of curing and the stiffness differences between the individual layers. In that model, an empirical relation is used to calculate the effective SIF range, which had been determined without sufficiently investigating the effect of crack closure. This paper presents the research performed on crack closure in GLARE. It is assumed that crack closure in FMLs is determined by the actual stress cycles in the metal layers and that it can be described with the available relations for monolithic aluminium published in the literature. Fatigue crack growth experiments have been performed on GLARE specimens in which crack growth rates and crack opening stresses have been recorded. The prediction model incorporating the crack closure relation for aluminium 2024-T3 obtained from the literature has been validated with the test results. It is concluded that crack growth in GLARE can be correlated with the effective SIF range at the crack tip in the aluminium layers, if it is determined with the crack closure relation for aluminium 2024-T3 based on actual stresses in the aluminium layers.  相似文献   
53.
应用比较几何的方法研究了完备非紧且具有特定曲率条件的黎曼流形,证明了在一定Pinching条件限制下,流形具有有限拓扑型或者微分同胚于R^n。  相似文献   
54.
The influence of an aggressive environment (0.6 M, aerated NaCl solution) on short fatigue crack initiation and growth behaviour has been studied. The study involved three major test series, namely: air fatigue, corrosion fatigue, and intermittent air fatigue/corrosion fatigue. The above tests carried out under fully reversed torsional loading conditions at a frequency of 5 Hz, showed that it was the non-metallic inclusions which took part in crack initiation resulting from debonding at metal matrix/inclusion interface and pitting of inclusions in both air and corrosove environments, respectively. Short fatigue crack growth results in these two environments obtained by using plastic replication technique, indicated a large effect of microstructure i.e. prior austenite grain boundaries. The stage/stages at which the environmental contribution was dominant has been discussed by considering the results achieved from intermittent tests. However, the mechanisms involved in corrosion fatigue short crack growth have also been described in the light of results obtained from futher investigations carried out by conducting corrosion fatigue tests under applied cathodic potential conditions and tests on hydrogen pre-charged specimens under air fatigue and uniaxial tension conditions.  相似文献   
55.
薄膜生长的计算机模拟   总被引:2,自引:0,他引:2  
薄膜技术在现代科技领域中有着广泛的应用。人们对薄膜的生长过程通过理论和实验进行了深入的研究,其中计算机模拟是重要的方法,本文概述了对薄膜生长过程的实验观察结果及其理论分析,主要讨论了薄膜生长的计算机模拟中经常采用的方法-蒙特卡罗法和分子动力学方法、描述衬底上成膜粒子运动的一些模型以及在计算机模拟中需注意的一些问题,其中主要包括粒子间的相互作用,入射粒子的能量和粒子上的衬底上的扩散运动。  相似文献   
56.
布里奇曼法生长碲镉汞晶体的缺陷及其展望   总被引:2,自引:0,他引:2  
王跃 《红外技术》1998,20(1):1-4,8
简单介绍了布里奇曼法生长碲镉汞晶体的主要缺陷以及缺陷的控制原理,回顾了国内进行磅镉汞晶体生长的布里奇曼法及加速坩埚旋转技术的布里奇曼法(ACRT-B)研究的情况,并提出了进一步研究的问题。  相似文献   
57.
NucleatePoolBoilingofPureLiquidsandBinaryMixtures:PartI-AnalyticalModelforBoilingHeatTransferofPureLiquidsonSmoothTubesGuoqin...  相似文献   
58.
几种高强度钢腐蚀疲劳裂纹扩展行为的研究   总被引:2,自引:0,他引:2  
陈美英  牛康民 《材料工程》1994,(3):38-41,44
本文研究了GC-4,30CrMnSiNi2A和300M超高强钢的腐蚀疲劳裂纹扩展行为。考虑了环境,热处理制度,应力比和频率对裂纹扩展的影响。研究结果表明:腐蚀环境和热处理制度对疲劳裂纹扩展有显著影响。在侵蚀性环境中随频率降低,裂纹扩展大幅度上升,随应力比提高,环境影响加剧。利用扫描电镜对试样断口形貌进行了分析,并讨论了高强钢的腐蚀疲劳机理。  相似文献   
59.
It is well-known that with the appearance of three independent papers by Taylor, Polanyi and Orowan in the year 1934, the concept of crystal dislocations was born. Since then, dislocation theory has had many spectacular successes. It is quite appropriate therefore to be aware of the state of development of this exciting subject, sixty years after its discovery. A flavour for the vast subject of the applications of dislocation mechanisms to real materials is presented by choosing three examples, one each, drawn from metallurgy, physics and electronics. The topic of ‘Strength of metals and alloys’ is the first one, as this is also the author’s area of research. The phenomenon of solidification and crystal growth forms the next topic, especially in view of the seminal contributions made by A R Verma and his school from India. Dislocations play a useful role in the strengthening of solids, but how influential are they in affecting the performance of modern semiconductor devices? In the third example, the interesting and painstaking work done to settle this question is reviewed. Can we regard carbon fibre as thetransistor of dislocation theory? How shall we understand the long-established effects such as corrosion-fatigue, superplasticity and shape memory as well as the electrochemical and electro-mechanical properties of dislocations in semiconductor and non-metallic crystals? Answers to these questions belong to the realms of the future developments in dislocations. The talk is concluded with a discussion of these topics.  相似文献   
60.
吴正立  严利人 《微电子学》1996,26(3):189-191
隧道小孔中超薄SiO2的生长是EEPROM电路制造的关键工艺之一。采用SUPREM-Ⅲ工艺模拟程序对超薄SiO2的热生长进行了工艺模拟,经过大量的工艺实验及优化,确定了超薄SiO2的最佳生长条件,生长出的SiO2性能良好,完全可满足EEPROM研制的要求。  相似文献   
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