Synthesis of magnesium borate nanorods

Single-crystalline magnesium borate Mg₂B₂O₅ nanorods have been synthesized via a simple route based on the calcinations of mixed powders containing Mg(OH)₂ and H₃BO₃. The nanorods have the typical diameters in the range of 70-120 nm and the lengths up to a few micrometers. An optimal synthesis temperature for Mg₂B₂O₅ nanorods was obtained, and the possible growth mechanism was also presented.     

Two-stage fatigue loading of woven carbon fibre reinforced laminates

A brief review of the models used to predict the cumulative fatigue damage in FRP composites is presented. Two‐stage fatigue loading of a [0/90,± 45₂,0/90]_s quasi‐ isotropic woven carbon fibre/epoxy resin laminate was evaluated at stress ratio R = 0.05 and the failure mechanisms investigated using x‐radiography after each loading stage. The results are presented in terms of fatigue strength and damage growth and are compared with those in the literature. A low‐to‐high loading sequence is more damaging than a high‐to‐low one and the Palmgren‐Miner linear damage rule may no longer be valid for this kind of material, as previously reported.     

Micromechanical modelling of ductile crack growth in the binder phase of WC–Co

This study focuses on numerical simulation of ductile failure in the Co binder phase of WC–Co hardmetal. The growth of edge cracks under mode I loading is considered. A computational micromechanics approach is taken where the Co binder ligaments are explicitly represented in finite element models. An embedding technique is employed. Crystal plasticity theory is used to represent plastic deformation in the Co ligaments. Crack propagation in the binder is simulated using an element removal technique based on a modified Rice and Tracey model for ductile void growth, and fracture resistance curves are generated. Parameter studies are performed for variations in microstructrual parameters such as numbers of Co ligaments ahead of the crack tip and local Co volume fraction. The importance of thermal residual stresses and finite element mesh density are also investigated.     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications

The slow (subcritical) crack growth (SCG) resistance of Si₃N₄ and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si₃N₄ sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si₃N₄ without additives.     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

过共晶Al－Si合金共生区激光表面处理

用２ｋＷ连续ＣＯ２激光对过共晶Ａｌ－１８Ｓｉ合金以不同能量密度和扫描速度进行快速熔凝处理。用扫描电镜、电子微区分析仪分析了微观结构。从计算机对Ａｌ－Ｓｉ合金ｆ－ｎｆ系统的非平衡理论计算所得的共生区及实验结果的分析可见，当能量密度和扫描速度决定的凝固条件处于共生区中部时，过共晶Ａｌ－Ｓｉ合金激光表面处理可以得到共晶间距低于２００ｎｍ的完全共晶结构。     

In－BiCaVIG的晶体生长与性能

本文报导了用助熔剂法成功地生长大尺寸掺铟ＢｉＣａＶＩＧ晶体的方法以及实验结果，介绍了该单晶在近红外区的磁光器件中的重要应用。     

纤维共晶生长界面前沿三维扩散场解析

修正Ｊａｃｋｓｏｎ和Ｈｕｎｔ关于在垂直生长方向截面上溶质扩散各向同性假设，求解三维Ｌａｐｏｌａｃｅ方程，获得纤维共晶生长界面前沿三维稳态扩散场，并证明Ｊａｃｋｓｏｎ和Ｈｕｎｔ的二维模型是实际生长的二维简化和一阶近似，并用丁二腈（ＳＣＮ）一梓脑（ＣＡＭ）纤维共晶系统计算生长界面前沿溶质分布。