InCl分子B~3∏_1态时间分辨谱研究

采用激光诱导荧光技术对ＩｎＣｌ分子 Ｂ３∏１→Ｘ１∑＋荧光光谱进行了分析和归属,并对Ｂ３∏１（ｖ’＝０）→Ｘ１∑＋（ｖ＂＝０）的时间分辨谱进行了观测．首次得到ＩｎＣｌ分子Ｂ２∏１态（ｖ＇＝０）无碰撞辐射寿命 ０≈３５３ｎｓ;无辐射弛豫速率常数ｋＱ≈１．９８５×１０－１０ｃｍ３ｍｏｌｅｃ－１ｓ－１及电子跃迁矩｜Ｒｅ｜２＝ ０．４０Ｄ２．     

碲镉汞薄膜少子寿命测试研究

碲镉汞(HgCdTe)材料的少子寿命是影响碲镉汞红外探测器性能的重要参数.分别采用微波光电导衰减(Microwave Photoconductivity Decay,μ-PCD)法和微波探测光电导(Microwave Detected Photoconductivity,MDP)法对 HgCdTe 薄膜的少子寿命进行了...     

Ultrafast Responsive and Low-Energy-Consumption Poly(3-hexylthiophene)/Perovskite Quantum Dots Composite Film-Based Photonic Synapse

Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr₃ perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory t hrough facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr₃ quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA_0.5Cs_0.5PbBr₃ quantum dots (Mix-QDs) and CsPbBr₃ quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spike-dependent plasticity and exhibits extremely low energy consumption of 3 × 10⁻¹⁷ J per synaptic event.     

成簇阶段恶意节点识别与剔除模型研究及实现

无线传感器网络节点成簇是实现对传感器网络高效节能管理和应用的有效途径.网络安全问题中恶意节点尤为突出,它们破坏网络系统的正常工作规则,影响网络的工作效率和整体存活寿命.为了提高网络的整体性能,希望能在网络成簇阶段及时将破坏作用的恶意节点识别出来并别除.采用LEACH层次化网络通信思路,应用一种基于LEACH算法的密钥预...     

Exciton‐Adjustable Interlayers for High Efficiency,Low Efficiency Roll‐Off,and Lifetime Improved Warm White Organic Light‐Emitting Diodes (WOLEDs) Based on a Delayed Fluorescence Assistant Host

Recently, a new route to achieve 100% internal quantum efficiency white organic light‐emitting diodes (WOLEDs) is proposed by utilizing noble‐metal‐free thermally activated delayed fluorescence (TADF) emitters due to the radiative contributions of triplet excitons by effective reverse intersystem crossing. However, a systematic understanding of their reliability and internal degradation mechanisms is still deficient. Here, it demonstrates high performance and operational stable purely organic fluorescent WOLEDs consisting of a TADF assistant host via a strategic exciton management by multi‐interlayers. By introducing such interlayers, carrier recombination zone could be controlled to suppress the generally unavoidable quenching of long‐range triplet excitons, successfully achieving remarkable external quantum efficiency of 15.1%, maximum power efficiency of 48.9 lm W⁻¹, and extended LT50 lifetime (time to 50% of initial luminance of 1000 cd m⁻²) exceeding 2000 h. To this knowledge, this is the first pioneering work for realizing high efficiency, low efficiency roll‐off, and operational stable WOLEDs based on a TADF assistant host. The current findings also indicate that broadening the carrier recombination region in both interlayers and yellow emitting layer as well as restraining exciplex quenching at carrier blocking interface make significant roles on reduced efficiency roll‐off and enhanced operational lifetime.     

GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命

采用转移矩阵和数值计算相结合的方法求解含时Schrodinger方程，计算了电子在双势垒结构中的构建时间和隧穿寿命. 结果表明：构建时间和隧穿寿命对于描述电子隧穿时间特性同等重要. 通过研究隧穿时间对结构参数的依赖情况发现，隧穿寿命随阱宽和垒厚的增加而迅速增大.     

One Method for Fast Gate Oxide TDDB Lifetime Prediction

提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控.通常情况下,为了得到栅极氧化膜在器件使用温度下的TDDB寿命,必须得到三个在一定温度下的不同电压下的TDDB寿命.然后使用一定模型(E模型或者1/E模型)和这个三个寿命推算出氧化膜在器件使用温度下的寿命.比较常用的是E模型.但是为了保证使用E模型推得的寿命的准确性,必须尽量使用较低电压下的寿命来推算想要的寿命.显然,为了获得低电压下的TDDB寿命,必须花费相当长的测试时间(甚至1个月).这对于工艺的实时监控来说,是不能接受的.文中提出一种新的推算栅氧化膜TDDB寿命的方法.运用该方法,可以快速、准确获得栅氧化膜的TDDB寿命,而花费的测试时间不到普通方法的1/1000000.在该方法中,巧妙地同时利用了1/E模型和E模型.     

PMOSFET's热载流子退化模拟及寿命评估的统一模型

对 PMOSFET's几种典型器件参数随应力时间的退化规律进行了深入研究 ,给出了一个新的器件退化监控量 ,并建立了不同器件参数退化的统一模型 .模拟结果和测量结果的比较表明 ,新的退化模型具有较高的准确性和较宽的适用范围 .新的退化模型不但可以用于器件参数退化量的模拟 ,也可以用于器件寿命评估     

可靠性评估领域中环境因子的研究进展

论述了环境因子在可靠性评估领域的重要性，基于研究环境因子的3个前提，讨论了各类分布环境因子的定义。重点综述了国内环境因子的研究情况和所取得的成果，最后根据可靠性评估理论的发展方向和小子样理论在可靠性评估领域中的重要性，指出了对环境因子的确定方法进一步研究的必要性和方向。     

Nd3 :Gd3Ga5O12激光晶体的吸收与发光

测量了用提拉(CZ)法生长的Nd3+Gd3Ga5O12(NdGGG)激光晶体室温时的吸收光谱,其中在806 nm处的吸收系数最大(α＝5.12 cm-1),吸收截面为4.03×10-20 cm2.用806 nm激发分别得到室温和10 K时的荧光光谱和荧光寿命,其中在1.06 μm附近晶体的荧光发射强度最强,2种温度时的峰值发射截面分别为1.7×10-19 cm2和1.9×10-19 cm2.0.6 at%和1.0 at%2种Nd3+掺杂浓度的晶体,室温时的荧光寿命分别为251 μs和240 μs,10 K温度时分别为253 μs和241 μs.与NdYAG晶体的荧光寿命、浓度猝灭效应和发射截面进行了比较,对结果进行了分析与讨论.