定时截尾Weibull分布的双参数的矩估计

讨论了在定时截尾情形下,将Weibull分布转化成指数分布数据或均匀分布,利用平均剩余寿命构造样本矩．从而得出参数的矩估计。并通过大量的Monte-Garlo数值模拟试验证实了所给方法的可行性。     

高压功率快恢复二极管的寿命控制研究

利用质子辐照感生的空位缺陷对铂原子的汲取作用,获得了局域寿命控制,辅以能量为4MeV电子辐照整体寿命控制技术,在具有低阳极发射效率结构的高压功率快恢复二极管中实现了更好的综合性能的优化。测试结果表明,此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性,在国际上处于领先水平。     

DEICA: A differential evolution-based improved clustering algorithm for IoT-based heterogeneous wireless sensor networks

With the evolution of technology, many modern applications like habitat monitoring, environmental monitoring, disaster prediction and management, and telehealth care have been proposed on wireless sensor networks (WSNs) with Internet of Things (IoT) integration. However, the performance of these networks is restricted because of the various constraints imposed due to the participating sensor nodes, such as nonreplaceable limited power units, constrained computation, and limited storage. Power limitation is the most severe among these restrictions. Hence, the researchers have sought schemes enabling energy-efficient network operations as the most crucial issue. A metaheuristic clustering scheme is proposed here to address this problem, which employs the differential evolution (DE) technique as a tool. The proposed scheme achieves improved network performance via the formulation of load-balanced clusters, resulting in a more scalable and adaptable network. The proposed scheme considers multiple parameters such as nodes' energy level, degree, proximity, and population for suitable network partitioning. Through various simulation results and experimentation, it establishes its efficacy over state-of-the-art schemes in respect of load-balanced cluster formation, improved network lifetime, network resource utilization, and network throughput. The proposed scheme ensures up to 57.69%, 33.16%, and 57.74% gains in network lifetime, energy utilization, and data packet delivery under varying network configurations. Besides providing the quantitative analysis, a detailed statistical analysis has also been performed that describes the acceptability of the proposed scheme under different network configurations.     

Monolithically integrated HgCdTe focal plane arrays

The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems.     

单色光光电导衰减法测试硅单晶少子寿命的表面复合修正公式

本文在数值分析和实验数据的基础上，提出了用单色光高频光电导衰减法测量硅单晶少子寿命的表面复合修正公式。     

形核物对铸锭多晶硅晶体生长的影响

对硅铸锭过程中的长晶阶段进行模拟和实验对比分析,研究二氧化硅种晶熔化界面形状和晶体生长界面形状。采用光致发光仪（PL）研究硅片的杂质和缺陷[1-2]分布,用微波光电导仪（u-PCD）研究了铸锭多晶硅锭少子寿命[3-4]的分布图。当形核物为SiO2, SiO2的尺寸为20um,形核温度为1430℃时制备的硅片表面相对完美,结构致密。     

RBF网络用于性能退化的可靠性评估

针对无法用数学式准确描述退化量与环境因子间复杂非线性关系的问题,提出了一种基于RBF网络的退化轨迹建模方法.利用RBF网络能够逼近任意非线性函数的特性,进行退化轨迹的建模,并结合失效值预测产品寿命.将所有估计寿命作为完全失效数据进行可靠性评估,有效地解决了失效数据少的问题.通过对疲劳裂纹增长数据的RBF网络建模分析,证明RBF网络具有很好的函数逼近能力,寿命预测结果非常理想.经验证,在更少的退化数据下,RBF网络仍能够较好地模拟退化轨迹,寿命预测精度较高.     

胶体硒化镉量子点的荧光时间分辨谱研究

使用化学胶体法合成了12个高质量、不同尺寸的胶体硒化镉量子点.测量了样品的时间分辨光致发光谱、TEM谱,同时测量并计算了样品的光致发光量子产率以及光致发光寿命.研究结果表明:硒化镉量子点的光辐射强度与表面相关的光辐射强度均由量子点的表面缺陷形式决定,并且也决定了光致发光量子产率、光致发光寿命.量子点的表面缺陷形式决定于尺寸,在量子点的生长过程中存在的表面的优化/重构也依赖于尺寸.     

无线传感器网络中移动sink节点的路径规划

在无线传感器网络中,大量感知数据汇集到sink节点的采集方法会导致sink节点附近的节点能量耗尽,造成能量空洞。针对该问题,利用移动的sink节点进行数据收集是一种解决方法,其中移动sink的路径规划成为一个重要的问题。提出了一个移动sink路径规划算法,将无线传感器中随机分布的节点划分为不同的子区域,寻找sink节点移动的最佳转向点,最终得到最优的移动路径,以实现无线传感器网络生命周期最大化。仿真实验表明,与现有方案相比,该算法能显著延长网络的生命周期。     

适用于少子产生寿命CAM的线性电压扫描法

提出了 MOS电容线性电压扫描法测量半导体少子产生寿命的新方法。通过在 MOS C-t瞬态曲线上读取 n个不同时刻的电容值 ,确定出相应的少子产生寿命值。该方法基于最小二乘法原理 ,可有效地消除测量误差的影响 ,其精度随读取点的增加而提高 ,特别适合于少子产生寿命的计算机辅助测量。