全光亮化学镀镍液的组成优化及寿命研究

用均匀设计试验优化了镀液组成。用综合指标Z表示镀层质量，试验数据用统计软件处理，在所得到的Z与各因素的回归方程中，标准系数最小的因素对指标的影响最小而被淘汰。用计算机对三元配位体镍磷化学镀体系中的12个可变组成进行逐级淘汰，筛选优化，最后获得仅有7个可变组成的单配位体体系。从该体系中同样镀出了优质的镜面全光亮镍磷镀层。优化后的镀液在镀速和寿命上都有所提高。在此基础上研究了诸因素对镀液寿命及镀速的影响，用正交试验确定了补加液的组成，乳酸和次磷酸钠的补加量对寿命的影响最大，当装载量为1．4dm^2／L时，施镀1h，每升镀液补加O．3mL乳酸，次磷酸钠与镍摩尔比按3．7：1补加，可以使镀液在周期达到10时仍然保持清澈透明，且镀层质量和镜面光亮的外观维持不变，使用周期可以达到15以上。     

A Superconducting Magnet UCN Trap for Precise Neutron Lifetime Measurements

Finite-element methods along with Monte Carlo simulations were used to design a magnetic storage device for ultracold neutrons (UCN) to measure their lifetime. A setup was determined which should make it possible to confine UCN with negligible losses and detect the protons emerging from β-decay with high efficiency: stacked superconducting solenoids create the magnetic storage field, an electrostatic extraction field inside the storage volume assures high proton collection efficiency. Alongside with the optimization of the magnetic and electrostatic design, the properties of the trap were investigated through extensive Monte Carlo simulation.     

Irradiation effects in semiconductor

Samples of crystalline silicon, porous silicon, gallium arsenide and silicon diodes were exposed to 50–80 MeV silicon and oxygen ions in the fluence range of the order of 10¹³ to 10¹⁴ ions/cm². The irradiated samples were characterized to obtain information on the relative concentration and depth distribution of the induced defects. For comparison a few silicon diodes and crystalline silicon samples were also exposed to 6 MeV electrons. The main techniques used for the analysis of silicon samples were low angle X-ray diffraction, photo-luminescence spectroscopy and lifetime of minority carriers, whereas diodes were characterized on the basis of switching parameters. It is observed that a large number of defects are produced in the surface region of each of the irradiated semiconductor sample though the energy deposited in the surface region through electronic loss is three orders of magnitude greater than that of nuclear collisions.     

Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates

We have demonstrated that the surface recombination velocity can be lowered to as low as 1.3 cm/s for n-type c-Si wafers and to 9.0 cm/s for p-type wafers by using amorphous Si (a-Si) and Si nitride (SiN_x) stacked films prepared by catalytic chemical vapor deposition (Cat-CVD). These values are much lower than those of c-Si wafers passivated by same stacked structures formed by low-damage remote plasma-enhanced CVD (PECVD). It is revealed that Cat-CVD a-Si insertion layers play an important role to improve interface quality, and also SiN_x films are also essential for reducing the surface recombination velocity down to such low levels.     

钡-磷酸盐玻璃中Cr~(3+)离子发光特性

在室温和低温(80K)下,对磷酸盐玻璃中 Cr~(3+)离子的吸收光谱、激发光谱、荧光光谱及荧光寿命进行了测量。根据配位场理论对实验结果进行了分析。不同波长激发下,观测到荧光峰值的移动和线宽的变化,对玻璃中 Cr~(3+)离子的浓度猝灭效应进行了讨论。     

提高钨钼拉丝模使用寿命的探讨

从拉丝模的材质、孔型设计、拉伸工艺和模子的使用与维护等方面 ,分析了影响钨钼拉丝模使用寿命的各种因素 ,并提出了提高拉丝模使用寿命的有效途径     

包覆钯和镍后MmNi5基贮氢合金的电极特性

Ｍｍ＿（０．９）Ｔｉ＿（０．１）Ｎｉ＿（３．９）Ｍｎ＿（０．４）Ｃｏ＿（０．４）Ａｌ＿（０．３）合金包覆１０ｗｔ％钯－镍后，电极循环寿命和快速充放电性能有明显提高。同时，钯是较好的吸氢元素，这也提高了负极贮氢合金的电容量利用率。包覆钯－镍的贮氢合金电极２００次循环后电容量仅下降３％。     

铸模工艺及浇铸控制对铜模使用寿命的影响

铜模使用寿命是阳极板浇铸除合格率外的另一重要指标参数,影响吨铜生产成本。本文简要从铸模过程、铜水温度控制、铜水成分控制、冷却水喷淋控制及喷涂液五个方面阐述对铜模使用寿命的影响。高纯度、低杂质的铜水是确保铜模使用寿命的前提,铜水浇铸温度控制在1200±10℃,浇铸模温保持在120℃~180℃,规范的铸模过程控制及适宜的铜水温度是铜模浇铸成功的基础,精准的冷却水喷淋系统控制和有效的喷涂效果是提高铜模使用寿命的关键保证。     

滚动轴承的白色腐蚀裂纹失效

白色腐蚀裂纹(WEC)为不同于经典滚动接触疲劳(RCF)的轴承失效机制,因通常导致轴承早期失效而成为目前最受关注的轴承失效机制之一。对WEC失效与经典RCF的差异进行了概述,并以台架测试研究了多种附加载荷、轴承材料及其热处理和表面涂层对轴承WEC失效寿命的作用,以及钢的洁净度对轴承WEC失效和经典RCF寿命的不同影响。证实了附加载荷是发生WEC失效的必要条件,改善钢的洁净度可显著提高轴承经典RCF寿命,但不能作为提高轴承WEC失效寿命的有效方法。     

高阻硅中深能级与少子寿命的研究

本文测量了ｎ型高阻硅在９种不同浓度的金掺杂前后少子寿命的变化，以及两类不同电阻率的ｎ型高阻硅在７种不同辐照剂量的１ＭｅＶ高能电子辐照前后少子寿命的变化；测量了金掺杂和高能电子辐照在硅中引入的主要深能级；研究对比金掺杂和高能电子辐照对硅单晶性能的影响及其在提高电子器件开关速度方面的应用。