一种用来测量低层大气温湿度结构的高精度探空仪

本文报道了我们研制的高国湿度探空仪,用薄陶瓷片型铂电阻测量气温、用干湿球法测量湿度,并采用参考电阻克服频漂,从而保证了测量精度,能精确测量出大气边界层温湿度结构。     

常温条件制备金属薄膜样品

一文在上海交通大学产电解双喷制样仪上,通过电解液高氯酸和冰醋酸,对几种金属材料进行了常温下,透射电镜薄膜样品的制备,并获得成功。     

一种分段曲率补偿带隙基准源设计

在传统带隙基准的基础上,设计了一种分段曲率补偿的低温漂带隙基准。利用NMOS管工作在亚阈值区域时漏电流和栅极电压的指数特性,在低温和高温段同时对基准电压进行曲率补偿,采用UMC 0.25μm BCD工艺进行仿真。仿真结果表明,电源电压5 V时,静态功耗电流为7.11μA;电源电压2.5~5.5 V,基准电压变化148μV;温度在–40~+145℃内,电路的温度系数为1.18×10–6/℃;低频时电源抑制比为–87 d B。     

Genetic algorithm‐based scheduling in cognitive radio networks under interference temperature constraints

The proliferation of wireless technologies and services has intensified the demand for the radio spectrum. However, the currently existing fixed spectrum assignment policy leads to an inefficient and unevenly distributed spectrum utilization. Cognitive radio paradigm has been proposed to alleviate these drawbacks by employing dynamic spectrum access (DSA) methodology. Federal Communications Commission (FCC) has proposed the interference temperature model, which enables the unlicensed users to utilize the licensed frequencies simultaneously with the licensed users as long as they conform to the interference temperature constraints. Recently, throughput and delay optimal schedulers that meet the interference temperature constraints in cognitive radio networks have been formulated in the literature. However, these schedulers have high computational complexity. In this paper, we propose genetic algorithm (GA)‐based suboptimal methods addressing these throughput and delay optimal scheduling problems. The simulation results corroborate that our GA‐based approach yields very close performance to the optimal solutions and operates with much lower complexity. Copyright © 2010 John Wiley & Sons, Ltd.     

硒化温度对SnSe2薄膜材料性能的影响

采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe₂薄膜,采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度,研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响。结果表明:350℃,40min硒化所得薄膜为片状晶粒,光学带隙为1.46eV,相结构和均匀性等性能在该硒化条件下均为最佳。     

Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor

The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.     

基于红外成像技术的乙烯裂解炉炉管温度安全监测

介绍了裂解炉工作中对炉管表面温度掌握的重要性,利用比色测温理论对炉管温度进行监测的方法,以及CCD的光电特性对于曝光量的要求。通过对几组标定温度与计算温度的比较得出温度T的计算方法,并通过实验证实用这种测温方法的可行性。     

Emulation-based transient thermal modeling of 2D/3D systems-on-chip with active cooling

State-of-the-art devices in the consumer electronics market are relying more and more on Multi-Processor Systems-On-Chip (MPSoCs) as an efficient solution to meet their multiple design constrains, such as low cost, low power consumption, high performance and short time-to-market. In fact, as technology scales down, logic density and power density increase, generating hot spots that seriously affect the MPSoC performance and can physically damage the final system behavior. Moreover, forthcoming three-dimensional (3D) MPSoCs can achieve higher system integration density, but the aforementioned thermal problems are seriously aggravated. Thus, new thermal exploration tools are needed to study the temperature variation effects inside 3D MPSoCs. In this paper, we present a novel approach for fast transient thermal modeling and analysis of 3D MPSoCs with active (liquid) cooling solutions, while capturing the hardware-software interaction. In order to preserve both accuracy and speed, we propose a close-loop framework that combines the use of Field Programmable Gate Arrays (FPGAs) to emulate the hardware components of 2D/3D MPSoC platforms with a highly optimized thermal simulator, which uses an RC-based linear thermal model to analyze the liquid flow. The proposed framework offers speed-ups of more than three orders of magnitude when compared to cycle-accurate 3D MPSoC thermal simulators. Thus, this approach enables MPSoC designers to validate different hardware- and software-based 3D thermal management policies in real-time, and while running real-life applications, including liquid cooling injection control.     

大功率LED散热回路热管的实验研究

大功率LED热问题是制约大功率 LED的稳定性、可靠性和寿命的技术瓶颈之一,有效的低热阻封装LED热设计是提高LE D性能的关键。本文提 出一种应用于大功率LED散热的铜-水回路热管(LHP),研究了加热方 式、充液率、风压和倾角 等对LHP均温性、起动性和热阻等的影响。研究结果表明:在输入功率为30W时,LHP的启动时间约为 6.5min;热阻范围为0.48～1.62K/W;在热 负荷为30W时,蒸发器的温度可以稳定控制在75℃以下;蒸发器表 面均温差被控制在1.6℃以下;LHP的最佳的充液率为60%;冷凝器侧 风压在一定范围内(小于130Pa)时,冷凝器侧风压力越大,LED产 品的散热性能越好。     

Fabrication of long length Bi-2223 superconductor tape using continuous electrophoretic deposition on round and flat substrates

We have developed a continuous fabrication process for producing long lengths of Bi-2223 superconductor tapes. The process involves sequentially electrophoretically depositing and sintering superconductor and then silver layers on a substrate, followed by rolling and thermal processing. Both round and flat silver substrates have been used. Bi-2223 tapes made using flat silver substrates require only a few processing steps. Transport critical current densities at 77K in zero applied magnetic field exceeding 20000 A/cm² have been obtained.