使用矩阵实现LRU的页面置换算法

操作系统的内存管理一直是计算机领域研究的一个重要方向。文中分析了几种常用内存管理中的页面置换算法及其存在的问题,提出了LUR页面置换算法的操作系统内存管理中比较接近理想算法的一种页面置换算法,并阐述了使用矩阵方法实现该页面置换算法的原理。     

紧扣内存变量关系巧解矩阵类问题

C语言学习过程中,不少初学者不能建立思维的模型,无法将形象可行的矩阵运算、旋转事件抽象化成算法语言。讲解了指导学生掌握矩阵操作算法的推导方法。     

基于逻辑器件的可编程增益放大器设计

本文介绍了可编程增益放大器设计的方法。它主要由控制电路、放大电路、显示电路三大模块组成。该系统性能好、成本低、工作可靠,具有一定的工程应用价值,经测试表明,该设计基本上达到了设计的要求。     

Intelligent tool wear monitoring based on parallel residual and stacked bidirectional long short-term memory network

Effective tool wear monitoring (TWM) is essential for accurately assessing the degree of tool wear and for timely preventive maintenance. Existing data-driven monitoring methods mainly rely on complex feature engineering, which reduces the monitoring efficiency. This paper proposes a novel TWM model based on a parallel residual and stacked bidirectional long short-term memory (PRes–SBiLSTM) network. First, a parallel residual network (PResNet) is used to extract the multi-scale local features of sensor signals adaptively. Subsequently, a stacked bidirectional long short-term memory (SBiLSTM) network is used to obtain the time-series features related to the tool wear characteristics. Finally, the predicted tool wear value is outputted through a fully connected network. A smoothing correction method is applied to improve the prediction accuracy. The proposed model is experimentally verified to have a high prediction accuracy without sacrificing its generalization ability. A TWM system framework based on the PRes–SBiLSTM network is proposed, which has a certain reference value for TWM in actual industrial environments.     

Register allocation for write activity minimization on non-volatile main memory for embedded systems

Non-volatile memories are good candidates for DRAM replacement as main memory in embedded systems and they have many desirable characteristics. Nevertheless, the disadvantages of non-volatile memory co-exist with its advantages. First, the lifetime of some of the non-volatile memories is limited by the number of erase operations. Second, read and write operations have asymmetric speed or power consumption in non-volatile memory. This paper focuses on the embedded systems using non-volatile memory as main memory. We propose register allocation technique with re-computation to reduce the number of store instructions. When non-volatile memory is applied as the main memory, reducing store instructions will reduce write activities on non-volatile memory. To re-compute the spills effectively during register allocation, a novel potential spill selection strategy is proposed. During this process, live range splitting is utilized to split certain long live ranges such that they are more likely to be assigned into registers. In addition, techniques for re-computation overhead reduction is proposed on systems with multiple functional units. With the proposed approach, the lifetime of non-volatile memory is extended accordingly. The experimental results demonstrate that the proposed technique can efficiently reduce the number of store instructions on systems with non-volatile memory by 33% on average.     

An illusion of memory: False recognition influenced by unconscious perception.

The results of two experiments showed that an illusion of memory can be produced by unconscious perception. In a first phase of those experiments, a long list of words was presented for study. For the test of recognition memory given in the second phase of each experiment, presentation of a "context" word preceded that of most recognition test words. Ss were to judge whether or not the test words had been presented during the earlier study phase of the experiment. Effects of a context word on this recognition memory decision were opposite when Ss were aware vs. unaware of its presentation. For example, as compared to a condition in which no context word was presented, the probability of false recognition was increased when Ss were unaware but decreased when Ss were aware of the presentation of a context word that matched the recognition test word. Results are discussed in terms of unconscious influences on an attribution process. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Cell处理器访存特征研究

Cell处理器是一款异构多核处理器,拥有强大的计算能力。但是,在进行应用并行化时,却受到本地存储器容量、访存带宽和数据传输延时等的限制。DMA传输是隐藏长延时、提高存储带宽利用率的有效方法。本文在分析Cell处理器结构基础上,进行了一系列详细的DMA测试,并利用指数拟合技术得到DMA平均带宽模型,发现参与DMA传输的SPE数量和每次DMA传输规模是影响DMA访存带宽的主要因素。     

Fluctuating NMDA Receptor Subunit Levels in Perirhinal Cortex Relate to Their Dynamic Roles in Object Memory Destabilization and Reconsolidation

Reminder cues can destabilize consolidated memories, rendering them modifiable before they return to a stable state through the process of reconsolidation. Older and stronger memories resist this process and require the presentation of reminders along with salient novel information in order to destabilize. Previously, we demonstrated in rats that novelty-induced object memory destabilization requires acetylcholine (ACh) activity at M₁ muscarinic receptors. Other research predominantly has focused on glutamate, which modulates fear memory destabilization and reconsolidation through GluN2B- and GluN2A-containing NMDARs, respectively. In the current study, we demonstrate the same dissociable roles of GluN2B- and N2A-containing NMDARs in perirhinal cortex (PRh) for object memory destabilization and reconsolidation when boundary conditions are absent. However, neither GluN2 receptor subtype was required for novelty-induced destabilization of remote, resistant memories. Furthermore, GluN2B and GluN2A subunit proteins were upregulated selectively in PRh 24 h after learning, but returned to baseline by 48 h, suggesting that NMDARs, unlike muscarinic receptors, have only a temporary role in object memory destabilization. Indeed, activation of M₁ receptors in PRh at the time of reactivation effectively destabilized remote memories despite inhibition of GluN2B-containing NMDARs. These findings suggest that cholinergic activity at M₁ receptors overrides boundary conditions to destabilize resistant memories when other established mechanisms are insufficient.     

MICROSTRUCTURE AND REVERSE SHAPE MEMORY EFFECT IN A Cu-Zn-Al ALLOY

The bainite structure in a Cu-Zn-A1 alloy related to the reverse shape memory effect hasbeen observed by means of TEM.The reverse memory effect may be improved by up to oneorder of magnitude under applied constraint stress.The widespread propagation of bainite wasconfirmed to be the diffusion controlled shear process by the parabolic configuration of sideinterface of bainite plate and the twisting of intersected bainite plates.     

Mobile learning in chemical engineering: An outlook based on case studies

In the context of the electronic learning (E-learning) methodology, mobile learning (M-learning) focuses on the use of portable technology (such as mobiles or tablets) and the mobility of students. E-learning, and particularly M-learning, can be implemented in combination with other pedagogical methodologies for chemical engineering teaching and learning. We can consider that the vast majority of undergraduates own personal mobile devices nowadays. Moreover, many case studies have shown that M-learning is an effective methodology to capture students’ attention and to actively engage them in the learning process. In most cases, lecturers have reported an improvement in both academic performance and qualifications and have expressed a favourable opinion towards this type of initiative in surveys. In line with the increasing interest in the incorporation of E-learning, this review discusses cases studies based on M-learning within the field of chemical engineering teaching through different technological platforms and apps which can be installed or directly used on mobile devices. All the platforms described in this work offer a free version, emphasizing the possibility of extending this methodology within the university with no need for additional economic resources.