用光纤环路镜实现WDM系统中的EDFA增益均衡

EDFA对不同波长的光产生的增益不同 ,这种增益不平坦特性成为 WDM系统中高速率、大容量信息传输的障碍 ,因此对 EDFA的增益进行均衡就显得特别重要。介绍用光纤环路镜实现 EDFA增益均衡的机理 ,并进行了实验 ,结果表明该方法简单易行 ,均衡效果显著     

静电微反射镜的发展与应用

本文从静电微反射镜结构、驱动方式、加工工艺等方面对目前静电微反射镜的原理和实现方法进行总结。分别讨论了它们的功能特点和应用方向。分析了不同应用领域的静电微反射镜的性能要求和结构方式,重点介绍了静电微反射镜在投影显示器和空间光通信等领域的应用。最后讨论了静电微反射镜在光学特性分析、驱动方式、工艺设计、动态特性和控制方法等方面的关键问题及发展方向。     

量子密码术中的即插即用系统

讨论了利用法拉第镜补偿光在光纤中传输的偏振波动,介绍了量子密码术中基于法拉第镜的即插即用系统,并对即插即用系统进行简单相位编码分析。在系统中干涉脉冲遵循确切相同的路径,确保非常高的稳定性和自我补偿,使用法拉第镜自动补偿光纤中的任何双折射效应和偏振相关损耗。     

A cascade energy band structure enhances the carrier energy in organic vertical-type triodes

Organic vertical-type triodes (OVTs) based on the cascade energy band structure as emitter layer are studied. The electric characteristics were dramatically enhanced while incorporating the cascade energy under current driving and voltage driving modes. The improvement is attributed to that injection carriers can obtain higher energy through a stepwise energy level. When the device has a layered structure of F₁₆CuPC (10 nm)/PTCDI (10 nm)/pentacene (100 nm) in emitter, it exhibits a common-base transport factor of 0.99 and a common-emitter current gain of 225 under current driving mode and exhibits a high current modulation-exceeding ?520 μA for a low collector voltage of ?5 V and a base voltage of ?5 V and the current on/off ratio of 10³ under voltage driving mode. Furthermore, we realized first organic current mirror that exhibited out/in current ratio of 0.75 and output resistance of 10⁵ Ω by using the OVTs.     

倒圆角三角型两轴柔性支撑设计

为提高压电陶瓷驱动的快速反射镜的回转精度,对倒圆角三角型柔性支撑进行研究。首先利用卡氏第二定理推导出倒圆角三角型柔性铰链柔度和回转精度理论计算公式;然后建立倒圆角三角型柔性铰链和两轴柔性支撑的有限元模型,并进行仿真分析得出柔度和回转精度的仿真值。将仿真值与理论值进行比较,其结果表明,最大误差在8%以内,验证了所推导公式的准确性。对比直圆型柔性支撑,在保证柔度的前提下,倒圆角三角型柔性支撑的回转精度提高了40%,具有重要的工程实用价值。     

Multi‐band Approach to Deep Learning‐Based Artificial Stereo Extension

In this paper, an artificial stereo extension method that creates stereophonic sound from a mono sound source is proposed. The proposed method first trains deep neural networks (DNNs) that model the nonlinear relationship between the dominant and residual signals of the stereo channel. In the training stage, the band‐wise log spectral magnitude and unwrapped phase of both the dominant and residual signals are utilized to model the nonlinearities of each sub‐band through deep architecture. From that point, stereo extension is conducted by estimating the residual signal that corresponds to the input mono channel signal with the trained DNN model in a sub‐band domain. The performance of the proposed method was evaluated using a log spectral distortion (LSD) measure and multiple stimuli with a hidden reference and anchor (MUSHRA) test. The results showed that the proposed method provided a lower LSD and higher MUSHRA score than conventional methods that use hidden Markov models and DNN with full‐band processing.     

基于组合阵的近场噪声源定位方法研究

在对浅海近程噪声源定位研究时,针对多途环境和左右舷模糊问题,采用了组合阵与时反技术相结合的方法。利用矢量水听器的单边指向性去除虚假声源的干扰,并利用时间反转镜技术抑制多途效应的影响,从而实现了浅海近程声源定位。     

快速反射镜机械结构研究综述

概述了快速反射镜的作用，分析了框架式和柔性轴形式两种结构以及国内外研究现状，并且对其发展方向提出了理论指导。     

腔衰荡法四腔镜反射率及腔内吸收测量

利用腔衰荡四腔镜轮换的方法 ,在常态下测得了四腔镜的反射率 ,同时得到了腔内对测量光的吸收损耗     

Highly linear micropower class AB current mirrors using Quasi-Floating Gate transistors

A design approach to achieve low-voltage micropower class AB CMOS cascode current mirrors is presented. Both class AB operation and dynamic cascode biasing are based on the use of Quasi-Floating Gate transistors. They allow high linearity for large signal currents and accurately set quiescent currents without requiring extra power consumption or supply voltage requirements. Measurement results show that dynamic cascode biasing allows a wider input range and a linearity improvement of more than 23 dB with respect to the use of conventional biasing. A THD value better than −35 dB is measured for input amplitudes up to 100 times the bias currents. Two class AB current mirror topologies are proposed, with slightly different ways to achieve class AB operation and dynamic biasing. The proposed current mirrors, fabricated in a 0.5 µm CMOS technology, are able to operate with a supply voltage of 1.2 V and a quiescent power consumption of only 36 µW, using a silicon area <0.025 mm².