Nitridation of the Sol–Gel-Derived Titanium Oxide Films by Heating in Ammonia Gas

Dip-coated sol–gel-derived TiO₂ films on an alumina substrate were converted to nonstoichiometric titanium nitride (TiN _x ( x ≦ 1)) films by heating at approxmately 1000°C in NH₃ gas. TiO₂ films made from TiO₂ sols prepared from Ti(O– i -C₃H₇)₄ and stabilized by diethanolamine were more easily nitrided than those from sols containing HCl as a deflocculant reagent. This appears to be a result of the more porous structure of the former films.     

Thermodynamic Analysis of Chemical Vapor Deposition of BN + AIN Composite Coatings

Thermodynamic calculations were performed using a modified solgasmix-pv computer program in order to study the feasibility of codepositing boron nitride (BN) plus aluminum nitride (AIN) by chemical vapor deposition. Reactants considered were AICl₃, BCl₃ or B₂H₆, NH₃, and H₂. Deposition diagrams were generated for the BCl₃-AICl₃-NH₃ system over a range of processing conditions such as temperature, total system pressure, and reagent concentrations. Codeposition of BN + AIN was predicted by the calculations for temperatures in the range of 900 to 1700 K and pressures of 10.13 to 101.3 kPa. The predicted deposition efficiency at equilibrium was much higher for BN than for AlN at most reagent compositions. The AlN deposition efficiency increased with decreasing temperature and decreasing BCl₃ content, with increasing NH₃ content, or with the addition of H₂. Aluminum chlorides were found to be the dominant gaseous species.     

基于GaN HEMT的半桥LLC优化设计和损耗分析

较之于传统硅器件,新出现的增强型氮化镓晶体管GaN HEMTs(gallium nitride high electron mobility transistors)具有很高的开关速度和高功率密度的特性,可以为直流变换器提供有效的改进。为了解决GaN HEMT在硬开关应用场合下的波形振荡并提高功率密度和效率,采用半桥LLC谐振变换器为本次应用的拓扑结构。以减小损耗为目的,优化了LLC的谐振参数和死区时间。在400 V输入电压、开关频率300 kHz和输出电压18 V电流12 A的测试条件下,效率达到95.59%。最后对变换器的损耗来源进行分析,损耗的理论计算值接近实际测量值,证明了方法具有一定的实用性。     

超薄氮氧叠层栅介质的金属栅pMOS电容的电学特性

研究了高质量超薄氮化硅/氮氧化硅(N/O)叠层栅介质的金属栅pMOS电容的电学特性,制备了栅介质等效厚度小于2nm的N/O复合叠层栅介质,该栅介质具有很强的抗硼穿通能力和低的漏电流.实验表明这种N/O复合栅介质与优化溅射W/TiN金属栅相结合的技术具有良好的发展前景.     

磁控管钼锥形筒加工方法

钼锥形筒是磁控管阴极组件的重要零件之一,加工难度很大。长期以来,采用车床加工,浪费材料,精度差,成品率低。本文通过分析钼锥形筒的形状及材料特点,成功设计钼锥形筒卷弯模并摸索出加工工艺,实现了钼锥形筒的大批量生产。     

Lightweight,Superelastic Boron Nitride/Polydimethylsiloxane Foam as Air Dielectric Substitute for Multifunctional Capacitive Sensor Applications

Porous polymeric foams as dielectric layer for highly sensitive capacitive based pressure sensors have been extensively explored owing to their excellent flexibility and elasticity. Despite intensive efforts, most of previously reported porous polymer foams still suffer from difficulty in further lowering the attainable density limit of ≈0.1 g cm^?3 while retaining high sensitivity and compressibility due to the limitations on existing fabrication techniques and materials. Herein, utilizing 3D interconnected networks of few‐layer hexagonal boron nitride foams (h‐BNFs) as supporting frameworks, lightweight and highly porous BN/polydimethylsiloxane composite foams (BNF@PDMS) with densities reaching as low as 15 mg cm^?3 and permittivity close to that of air are fabricated. This is the lightest PDMS‐based foam reported to date. Owing to the synergistic effects between BN and PDMS, these lightweight composite foams possess excellent mechanical resilience, extremely high compressibility (up to 95% strain), good cyclic performance, and superelasticity. Being electrically nonconductive, the potential application of BNF@PDMS as a dielectric layer for capacitive sensors is further demonstrated. Remarkably, the as‐fabricated device can perform multiple sensing functions such as noncontact touch sensor, environmental monitoring sensor, and high sensitivity pressure sensor that can detect extremely low pressures of below 1 Pa.     

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiN_x prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips.     

Molybdenum Dioxide Nanoparticles Anchored on Nitrogen-Doped Carbon Nanotubes as Oxidative Desulfurization Catalysts: Role of Electron Transfer in Activity and Reusability

Electron transfer between metal-oxides and supports considerably affects the oxidative desulfurization (ODS) performance of catalysts, while this is far from being well understood. Herein, molybdenum dioxide with oxygen vacancies (V_O-MoO₂) catalysts derived from Mo-based metal-organic frameworks are anchored on electron-rich nitrogen-doped carbon nanotubes (NC) to obtain excellent ODS activity and reusability. Results show that either dibenzothiophene (DBT) or 4,6-dimethyldibenzothiophene (4,6-DMDBT) is removed 100% on the composite catalyst (V_O-MoO₂@NC) within 40 min of reaction when cumene hydroperoxide is chosen as an oxidant. After five cycles of reaction, DBT and 4,6-DMDBT removal still exceeded 99.5 and 95.0%, respectively. Results from density functional theory calculations and characterizations confirm that the strong electron-donating effect of NC on V_O-MoO₂ can promote the dispersion of V_O-MoO₂ and reduce the bond energy of the Mo O bond, leading to exposure of active sites and enrichment of oxygen vacancies (V_O). Furthermore, the strong interfacial electrostatic interaction caused by the electron transfer from NC to V_O-MoO₂ can reduce the leaching of active sites of the catalyst. This study provides a versatile strategy of constructing strong electronic interaction between metal-oxide and support via anchoring on NC for the design of high-performance ODS catalysts.     

Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al₂O₃/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al₂O₃/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.     

Si_3N_4在BaTiO_3基低阻高性能PTCR陶瓷材料中的作用

要同时保证 PTCR材料和元件具有低室温电阻率和较高的 PTC特性 ,有较大难度。研究了添加 Si3N4作为烧结助剂 ,对 PTCR材料的显微结构和电学性能的影响。同添加 Si O2 作为烧结助剂相比 ,添加 1.0 %的 Si3N4的 PTCR材料更易同时满足低阻高性能要求。