Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

Numerical simulation analysis and experimental validation on wear/fracture mechanisms of polycrystalline cubic boron nitride superabrasives in high-speed grinding

In this study, a two-dimensional finite element model is proposed to investigate the wear/fracture mechanisms of polycrystalline cubic boron nitride (PCBN) superabrasives in high-speed grinding process. The special geometric microstructures of PCBN grains are constructed by using the classic Voronoi tessellation technique, and cohesive elements are embedded into the geometric model of PCBN grains as the potential crack propagation paths for simulating the wear/fracture behaviours of PCBN grains under grinding loads. The effects of uncut chip thickness per grain (a_gmax) on the stress distribution characteristics and wear/fracture behaviours of PCBN grains during grinding are discussed in detail. Results show that the wear behaviour of PCBN grains during grinding mainly occurs around the grain vertex region; however, the fracture behaviour, leading to the quick failure of PCBN grains, is prone to appear around the grain–filler bonding interface, which is usually on the opposite side of the in-feed direction. Moreover, to separate the PCBN grains from the macro-fracture during grinding, the uncut chip thickness per grain should be kept smaller than 1.0?µm to prevent the unfavourable fracture behaviour from appearing around the grain–filler bonding interface. Furthermore, the corresponding single-grain grinding trials are performed to validate the numerical simulation results by evaluating the wear/fracture morphologies of the PCBN superabrasives in the actual grinding operation.     

Characterization of boron nitride nanosheets synthesized by boron-ammonia reaction

Boron nitride nanosheets (BNNS) with thickness 5–11 nm were successfully produced when pure boron powder (1–2 μm) interacted with ammonia gas in chemical vapour deposition set up. Under the optimized parameters, at 1200 °C and for uninterrupted 1 h of reaction duration, 2D BNNS with thickness of ca.11 nm were synthesized. BNNS were characterized by X-ray diffraction (XRD) for crystal structure, scanning electron microscopy for dimensions and morphology, energy dispersive X-ray analysis for chemical composition and Fourier transform infrared spectroscopy for sp² BN bond detection. The thickness of BNNS determined from both XRD data (using Scherrer equation) and atomic force microscopic analysis confirmed the stated product thickness. The BNNS obtained at 1200 °C had high crystallinity, purity and yield.     

Laser surface nanostructuring for reliable Si3N4/Si3N4 and Si3N4/Invar joined components

IR pulsed laser radiation in air was applied to Si₃N₄ and Invar to obtain reliable Si₃N₄/Si₃N₄ and Si₃N₄/Invar adhesive bonded components. The laser pre-treatment produced a homogeneous nanostructured oxide layer on the surfaces, which effectively increased the adhesion at the adhesive/adherends interface and led to cohesive failure in the joining material. The mechanical strength of Si₃N₄/ Si₃N₄ and Si₃N₄/Invar joined components was measured, with and without laser nanostructuring, before and after thermal cycling from room temperature to 50?K, and it resulted that the exposure to extremely low temperatures did not affect the mechanical integrity of the joints. It was also demonstrated that this laser pre-treatment did not alter the mechanical properties of the ceramic substrate.     

The effect of Al2O3-MgO additives on the microstructure of spark plasma sintered silicon nitride

It was shown that spark plasma sintered silicon nitride with a high content of Al₂O₃ and MgO consists of α and β silicon nitride, the main phase being α silicon nitride. The increase in the sintering temperature did not lead to significant changes in the phase composition as occurs in silicon nitride added with Al₂O₃-Y₂O₃. It was found that increasing in SPS temperature above 1650 °C leads to an insignificant increase in the density. A complex shaped equiaxed grain microstructure was shown in both cases. However, doping with aluminum and yttrium oxides allows obtaining an elongated grain microstructure. The Hall-Petch effect was observed for the microhardness of the investigated SPSed silicon nitride. The microhardness of the described ceramics was rather high and more than 1900 HV compared to the pressureless sintered at 1800 °C silicon nitride with the microhardness equal to 1511 HV.     

Phase,microstructure and sintering of aluminum nitride powder by the carbothermal reduction-nitridation process with Y2O3 addition

Aluminum nitride powders were synthesized by carbothermal reduction-nitridation method using Al(OH)₃, carbon black and Y₂O₃ as raw materials. The change of phase, microstructure and densification during the AlN synthesis and sintering process were investigated and the effects of Y₂O₃ was discussed. The results showed that Y₂O₃ reacted with Al₂O₃ to form yttrium aluminates of YAlO₃ (orthorhombic and hexagonal phases), Y₄Al₂O₉ and Y₃Al₅O₁₂ at the low temperature of 1350 °C. YAlO₃ could firstly be transformed into Y₂O₃ and then completely into YN when the firing temperature and holding time increased. However, YN could be oxidized into Y₂O₃ again after the carbon removal at 700 °C in the air atmosphere. There were two ways generating AlN when adding Y₂O₃ and the possible mechanism was proposed. Y₂O₃ from YN oxidation favored the densification of AlN ceramics because the liquid had better flowability and distribution in the sintering process at 1800 °C.     

Tungsten Nitride,Well‐Dispersed on Porous Carbon: Remarkable Catalyst,Produced without Addition of Ammonia,for the Oxidative Desulfurization of Liquid Fuel

Polyanilines (pANIs), loaded with phosphotungstic acid (PTA), are pyrolyzed to get WO₃ or W₂N (≈6 and ≈7 nm, respectively), which is well‐dispersed on pANI‐derived porous carbons (pDCs). Depending on the pyrolysis temperature, WO₃/pDC, W₂N/pDC, or W₂N‐W/pDCs could be obtained selectively. pANI acts as both the precursor of pDC and the nitrogen source for the nitridation of WO₃ into W₂N during the pyrolysis. Importantly, W₂N could be obtained from the pyrolysis without ammonia feeding. The obtained W₂N/pDC is applied as a heterogeneous catalyst for the oxidative desulfurization (ODS) of liquid fuel for the first time, and the results are compared with WO₃/pDC and WO₃/ZrO₂. The W₂N/pDC is very efficient in ODS with remarkable performance compared with WO₃/pDC or WO₃/ZrO₂, which is applied as a representative ODS catalyst. For example, W₂N/pDC shows around 3.4 and 2.7 times of kinetic constant and turnover frequency (based on 5 min of reaction), respectively, compared to that of WO₃/ZrO₂. Moreover, the catalysts could be regenerated in a facile way. Therefore, W₂N/pDC could be produced facilely from pyrolysis (without ammonia feeding) of PTA/pANI, and W₂N, well‐dispersed on pDC, can be suggested as a very efficient oxidation catalyst for the desulfurization of liquid fuel.     

Enhanced high-temperature dielectric properties and microwave absorption of SiC nanofibers modified Si3N4 ceramics within the gigahertz range

Si₃N₄ ceramics modified with SiC nanofibers were prepared by gel casting aiming to enhance the dielectric and microwave absorption properties at temperatures ranging from 25?°C to 800?°C within X-band (8.2–12.4?GHz). The results indicate that the complex permittivity and dielectric loss are significantly increased with increased weight fraction of SiC nanofibers in the Si₃N₄ ceramics. Meanwhile, both complex permittivity and dielectric loss of SiC nanofibers modified Si₃N₄ ceramics are obviously temperature-dependent, and increase with the higher test temperatures. Increased charges mobility along conducting paths made of self-interconnected SiC nanofibers together with multi-scale net-shaped structure composed of SiC nanofibers, Si₃N₄ grains and micro-pores are the main reason for these enhancements in dielectric properties. Moreover, the calculated microwave absorption demonstrates that much enhanced microwave attenuation abilities can be achieved in the SiC nanofibers modified Si₃N₄ ceramics, and temperature has positive effects on the microwave absorption performance. The SiC nanofibers modified Si₃N₄ ceramics will be promising candidates as microwave absorbing materials for high-temperature applications.     

The utilization of carbon nitride to reinforce the mechanical and thermal properties of UV-curable waterborne polyurethane acrylate coatings

The waterborne polyurethane-acrylate (WPUA and Wsi-PUA) oligomers were prepared by anionic self-emulsifying method, using isophorone diisocyanate (IPDI), polyethylene glycol (PEG), dimethylol propionic acid (DMPA), vinyl hydroxyl silicone oil (VHSO) and hydroxyethyl methyl acrylate (HEMA) as raw materials. Then, a series of UV-curable waterborne Wsi-PUA–C₃N₄ composites containing different content of g-C₃N₄ were obtained with oligomer and photoinitiator Darocur 1173. FTIR, XRD, TEM, SEM, and TGA were employed to investigate the structure, morphology and thermal property of the Wsi-PUA–C₃N₄ composite films. The effect of g-C₃N₄ content on the performance was also investigated. The mechanical performance, water resistance and gel content of UV-PUA films were measured. It was found that with g-C₃N₄ particle was introduced into Wsi-PUA oligomer, the hardness, tensile strength, gel content, water resistance and thermal stability of composite films were significantly augmented. Moreover, when the content of g-C₃N₄ was 1.0 wt.%, the UV-curable film had the best mechanical property. The obtained composite is promising for a number of applications, e.g., for protecting the surfaces of metal and wood.