CuBr2‐induced charge screening on photoactive nanocolloidal polypyrrole:poly(styrene sulfonate) composite multilayer thin‐film counter electrodes for high‐efficiency dye‐sensitized solar cells

Nanocolloidal polypyrrole (PPy):poly(styrene sulfonate) (PSS) particles were synthesized by chemical oxidative polymerization using 15 wt% of PSS. The highly processable polymer composite (PPy:PSS) was spin‐coated at 4000 rpm on fluorine‐doped tin oxide glass and subsequently employed as a counter electrode (CE) for dye‐sensitized solar cells (DSCs). PPy:PSS multilayer (one, three, five) CEs were treated with CuBr₂ salt, which enhances the efficiency of the DSCs. Optical studies reveal that a bulkier counterion hinders interchain interactions of PPy which on salt treatment shows a moderate redshift in absorption maxima. Salt‐treated PPy:PSS films exhibit lower charge transfer resistance, higher surface roughness and better catalytic performance for the reduction of I₃^?, when compared with untreated films. The improved catalytic performance of salt‐treated PPy:PSS multilayer films is attributed to charge screening and conformational change of PPy, along with the removal of excess PSS. Under standard AM 1.5 sunlight illumination, salt treatment is shown to boost the efficiency of multilayer PPy:PSS composite film‐based DSCs, leading to enhanced power conversion efficiency of 6.18, 6.33 and 6.37% for one, three and five layers, respectively. These values are significantly higher (ca 50%) than those for corresponding devices without CuBr₂ salt treatment (3.48, 2.90 and 2.01%, respectively). © 2016 Society of Chemical Industry     

极紫外啁啾多层膜反射镜的拟合分析

设计并制备了极紫外啁啾多层膜反射镜,利用同步辐射反射率测试装置完成了样品反射率的测试,采用单纯形算法拟合了反射率测试曲线,分析了顶层Si的氧化对拟合结果的影响.拟合结果表明,2块样品的Si-on-Mo粗糙度为0.4 nm和0.5 nm,Mo-on-Si粗糙度为0.8 nm和0.9 nm,顶层Si的氧化是影响极紫外啁啾多层膜反射镜反射率的重要因素.     

脉冲偏压频率对TiSiN/TiAlN纳米多层膜结构和性能的影响规律

目的 研究脉冲偏压频率对TiSiN/TiAlN纳米多层薄膜结构和性能的影响,优化工艺参数,以提高薄膜的性能.方法 采用脉冲偏压电弧离子镀,在M2高速钢和单晶硅基底上以不同脉冲偏压频率沉积TiSiN/TiAlN纳米多层薄膜,采用扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射仪和纳米压痕仪,研究脉冲偏压频率对TiSiN/TiAlN纳米多层薄膜的表面形貌、元素成分、截面形貌、相结构和纳米硬度的影响.结果 TiSiN/TiAlN纳米多层薄膜表面的大颗粒直径主要集中在1μm以下,随着脉冲偏压频率的变化,大颗粒的数量为184～234,所占面积为40.686～63.87μm2;主要元素为Ti元素和N元素,所占原子比分别为48％和50％,Si和Al元素的含量较少;多层结构不明显,截面形貌可观察到柱状晶的细化,80 kHz时出现片状化结构;以(111)晶面为择优取向,晶粒尺寸在20 nm左右;纳米硬度为28.3～32.3 GPa,弹性模量为262.5～286.8 GPa.结论 50 kHz时,TiSiN/TiAlN纳米多层薄膜表面大颗粒的数量最少,为184个;70 kHz时大颗粒所占面积最小,为40.686μm2;晶粒尺寸在50～60 kHz时发生细化,60 kHz时,晶粒尺寸达到最小值19.366 nm,纳米硬度和弹性模量分别达到最大值32.3 GPa和308.6 GPa,脉冲偏压频率的最佳频率范围为50～70 kHz.     

燃料电池不锈钢双极板CrN/CrC薄膜表面改性研究

采用离子镀技术在质子交换膜燃料电池不锈钢双极板表面制备了CrN/CrC多层薄膜。测试结果表明,与未镀膜的不锈钢基体相比,镀膜不锈钢的接触电阻(120N/cm2压紧力)降低2个数量级,并且耐蚀性能显著改善,腐蚀电流密度降低0.5~1个数量级。同时,镀膜不锈钢的耐久性亦大幅提升,改性薄膜可以有效保护不锈钢基体免受腐蚀损害。     

平面切换对信号传输特性影响的一种分析方法

采用"场"、"路"结合的方法研究了多层印制电路板参考平面的切换对信号完整性的影响.分析了过孔转换结构中返回电流的路径,通过"场"的方法获得两参考平面间的瞬态阻抗.将过孔转换结构等效为二端口网络,推导了基于等效电路拓扑结构的S参数与节点电压的关系,获得S参数的计算公式.计算了5 GHz内不同的过孔半径和参考面间距的回波损耗与插入损耗.结果表明:返回电流所受到的阻抗随参考平面间距的减小.而减小信号过孔的半径越小,回波损耗就越小,插入损耗越大,过孔转换结构对信号完整性的影响也越小.计算结果与全波有限元电磁仿真的结果基本吻合.     

Current Understanding of Structure–Processing–Property Relationships in BaTiO3–Bi(M)O3 Dielectrics

As part of a continued push for high permittivity dielectrics suitable for use at elevated operating temperatures and/or large electric fields, modifications of BaTiO₃ with Bi(M)O₃, where M represents a net‐trivalent B‐site occupied by one or more species, have received a great deal of recent attention. Materials in this composition family exhibit weakly coupled relaxor behavior that is not only remarkably stable at high temperatures and under large electric fields, but is also quite similar across various identities of M. Moderate levels of Bi content (as much as 50 mol%) appear to be crucial to the stability of the dielectric response. In addition, the presence of significant Bi reduces the processing temperatures required for densification and increases the required oxygen content in processing atmospheres relative to traditional X7R‐type BaTiO₃‐based dielectrics. Although detailed understanding of the structure–processing–property relationships in this class of materials is still in its infancy, this article reviews the current state of understanding of the mechanisms underlying the high and stable values of both relative permittivity and resistivity that are characteristic of BaTiO₃‐Bi(M)O₃ dielectrics as well as the processing challenges and opportunities associated with these materials.     

自组织分层金属掺杂类金刚石薄膜的研究进展

近年来,研究学者发现在沉积过程中,某些金属元素掺杂类金刚石薄膜时能够形成一种特殊的自组织分层纳米结构,这种纳米结构克服了人为调控多层薄膜的工艺复杂性及局限性,同时赋予了薄膜更加优异的性能。主要综述了国内外对金属掺杂类金刚石薄膜中自组织分层结构的影响因素、形成机理等方面的研究现状。详细阐述了金属类型及含量、沉积条件(脉冲频率、基体偏压、气流比、沉积温度、沉积时间)、沉积方法等参数对自组织分层结构的生成及富金属层厚、富碳层厚、层数等尺寸的作用规律。重点介绍了离子重排机理、金属催化机理、强离子辐照诱导机理和靶中毒机理四种自组织分层结构形成机理的特点,并探讨了目前研究工作中存在的一些不足,如自组织分层结构的形成机理尚不清晰。上述四种机理模型均具有一定的局限性,且如何设计工艺参数实现自组织分层结构的内在调控仍是一个科学难点。针对这些问题,提出了自组织分层结构碳基薄膜的未来研究方向。     

MgB2/Mo多层膜的制备与超导性质的研究

本文采用磁控溅射技术(MS)和混合物理化学气相沉积法(HPCVD)在单晶Al₂O₃基底上制备MgB₂/Mo多层膜。通过扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法对样品的表面形貌、晶体结构和超导特性进行了测量研究。实验结果表明随着后续MgB₂沉积温度的增加各膜层结晶程度进一步提高,晶粒尺寸不断增大,各自保持着良好的物质稳定性。在730℃温度下生长的MgB₂薄膜的超导转变温度T_con和零电阻温度T_c0分别为39.73K~39.53K,剩余电阻率~0.77μΩcm,表明样品处于干净极限。     

多层流延坯片的叠层工艺研究进展

流延坯片的叠层是多层陶瓷技术中最为重要的工艺之一。叠层工艺直接影响到电子器件三维结构(如通道、腔室及隔膜等)的质量。对叠层工艺如热压法叠层及其改进型技术、粘合基叠层、溶剂基叠层等进行综述,并对各种叠层方法的特点、研究进展及应用进行叙述。     

High-throughput optimization and fabrication of Bi2Te2.7Se0.3-based artificially tilted multilayer thermoelectric devices

Artificially tilted multilayer thermoelectric devices (ATMTDs) have attracted growing attention due to their ease in miniaturization and high flexibility in device design. However, most of these devices are inefficient due to the lack of effective strategy to optimize their material matching and geometrical configurations. Herein, a high-throughput optimization approach is employed to screen high-performance Bi₂Te_2.7Se_0.3-based ATMTDs from a material genome database covering 230 kinds of candidates. 14 kinds of ATMTDs are found to have ZT_zx,max values exceeding 0.3 and tilt angles greater than 15°. Bi_0.1Sb_1.9Te₃/Bi₂Te_2.7Se_0.3 ATMTD is screened out and fabricated because of its excellent transverse figure of merit, large tilt angle, and good interface compatibility. Consequently, transverse figure of merit over 0.3, thermal sensitivity greater than 0.11 mV·K^?1, and power density up to 1.1 kW·m^?2 are recorded in Bi_0.1Sb_1.9Te₃/Bi₂Te_2.7Se_0.3 ATMTD. This indicates that ATMTDs have great potential for application in the fields of temperature detection and power generation.