Electrical and optical characterization of Na: CuInS2 thin films grown by spray pyrolysis

The structural, electrical and optical properties of Na-doped CuInS₂ thin films grown by spray pyrolysis were studied. These films crystallized in the sphalerite structure of CuInS₂, and showed to contain traces of indium sulfide and CuIn₅S₈ as impurity phases. All films were In-rich and showed p-type conductivity. The film conductivity was strongly affected by Na-doping, which decreased from 10⁻² to 10⁻⁵ S/cm by increasing the [Na]/[Cu] ratio from 0.005 to 0.03 in the spray solution. The band gap energy was observed to increase, from 1.4 to 1.45 eV, with increasing the [Na]/[Cu] ratio. Our results suggested that Na could be an effective acceptor impurity in sprayed CuInS₂.     

宽带无源光网络的类型与比较

介绍典型功率分配无源光网络 (PSON)的功能结构和参考配置 ,阐述各种无源光网络 (PON)的发展现状 ,并结合图例介绍各种PON的工作原理、帧结构以及相关的关键技术 ,分别从标准制定、带宽损失、传输及数据处理等方面分析APON和EPON的特点 ,并对传统的PSPON和WDM PON进行了比较 ,说明WDM PON优于PSPON .对未来网络发展作了展望 .     

Coating Effects on Transient Cooling a Hot Spherical Body

A numerical solution is carried out to treat the transient cooling problem with conduction and radiation for a hot spherical body covered with a cold coating material. The solution includes the equations of radiative transfer, coupled with a transient energy equation that contains both radiative and conductive terms. The radiative transfer equation was solved by the discrete ordinates method, and a parmetric study was performed by changing various physical parameters such as the optical thicknesses, thermal conductivity of the coating, emissivity, and diffusivity of the sphere. It was found that the properties of the coating have a direct effect on the cooling rate of the sphere.     

退火对直流磁控溅射铬膜附着性的影响

为了利用铬膜改善锆的抗腐蚀性，研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响，使用扫描电镜（SEM）观察了界面形貌及锆，铬的界面的分布，用X－射线衍射仪（XRD）分析了膜层的组成，用划痕法测定了铬膜的附着，结果表明，锆／铬界面结合良好，边界可见；与现有文献比较，获得的铬膜附着性好――均超过20N；溅射后退火使Zr-Cr界面更像扩散界面，但X－射线衍射结果未发现有界面反应产物；退火提高铬膜与Zr-2基体的附着性约50％，扩散际着附着性增加的主要因素。     

UV-vis and photoluminescent spectra of TiO<Subscript>2</Subscript> films

TiO₂ fims have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0. 10 Pa.to 0.65 Pa. The transmittance (UV-vis) and photoluminescence (PL) spectra of the films were recorded. The results of the UV-vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O₂)≥0.15 Pa, the band gap increased from 3.48 eV to 3.68eV for direct transition and from 3.27 eV to 3.34 eV for indirect transition with increasing the oxygen partial pressure. The PL spectra show convincingly that the transition for films was indirect, and there were some oxygen defect energy levels at the band gap of the films. With increasing the O₂ partial pressure, the defect energy levels decreased. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63 eV and 2.41 eV, corresponding to 0.72 eV and 0.94 eV below the conduction band for a band gap of 3.35 eV, respectively. For the films sputtered at 0.10 Pa and 0.15 Pa, there was an energy band formed between 3.12 eV and 2.06 eV, corresponding to 0.23 eV and 1.29 eV below the conduction band. ZHAO Qing-nan : Born in 1963 Funded by Natural Science Foundation of Hubei Province, China.     

选频光释光断代初探

介绍了一种新发展起来的光释光测定年龄的技术－选频光释光技术。该技术使用的设备是光释光谱仪－BG1999。一年来该谱仪运行正常，性能稳定；实验结果令人信服。     

离子束辅助沉积立方氮化硼的试验研究

运用离子束辅助沉积(IBAD)法在硅片上制备了立方氮化硼(c—BN)薄膜，研究了辅助能量、辅助束流及辅助束中氮气含量等参数对膜中c—BN含量的影响。用红外光谱(FTIR)及X射线光电子能谱(XPS)分析技术对得到的c—BN膜进行了分析。结果表明：合适的离子辅助能量能够获得c—BN含量高的薄膜；膜中c—BN的含量随辅助气体中N2含量的提高而增加；辅助束流对薄膜的形成影响不明显。     

Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience inorder to investigate the relationship of their thermal stability, optical and electrical propertieswith deposition temperature. Results indicate that the films deposited at high temperature have a less CFx bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.