Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

张家口电厂锅炉"四管"爆漏情况回顾、分析与反措

通过总结张家口发电厂第一台机组投产以来锅炉“四管”爆漏发生的次数、原因，分析了在防止锅炉爆管方面采取的措施，肯定了目前取得的成绩，以供借鉴。     

液芯有机光纤的研制

研制出了液态有机光纤.结果表明,有机溶液的拉曼光谱与普通样品池的方法相比,其强度增加102倍以上.     

阻燃剂的现状与发展趋势

通过对无机燃剂和有机燃剂的现状的分析，指出了阻燃剂的无卤化和无机阻燃剂的开发及改性已成为阻燃剂最主要的发展趋势。     

降低妈湾电厂空预器漏风率的措施

为降低空预器漏风率，从结构设计分折得出空、烟气压差大和密封间隙大是其漏风的主要原因，通过采取高压水冲洗，气脉冲燃气吹灰，双密封改造，空预器重新选型等一系列措施来降低漏风率。     

D-T中子穿透铁球伴生γ射线泄漏能谱实验研究

建立了系列厚度为3、6、11、16、21．8cm的铁球基准装置。用BC-501A谱仪测量了D-T中子穿透铁球伴生γ射线泄漏能谱，能量范围为0．5～5MeV。通过能谱分析，观测到铁球厚度对能谱有一定影响。利用MCNP4A程序和t-2、ENDF／B-V、ENDF／B-Ⅵ和FENDL-2等数据库对实验进行了模拟计算，并将计算结果与实验结果进行了比较。γ射线能谱实验误差为4％～6％。     

有机溶剂分离膜结构和膜材料设计理论研究

综述现存有机溶剂分离膜的不同结构特点，分析膜结构对溶剂渗透性能的影响．围绕溶剂渗透过程的溶解-扩散机理模型，重点阐述预测溶解性的溶液热力学理论和计算扩散系数的自由体积理论，强调化工热力学理论对新型溶剂分离膜开发的指导作用．在此基础上，提出膜材料和膜结构相互协调，利用物性推算法进行有机溶剂分离膜材料设计的思想．