浅议如何用绿色植物防治矿区环境污染

绿色植物能吸收CO2 ,释放O2 ,清除有毒污染物 ,阻滞灰尘 ,杀灭细菌等致病微生物 ;在矿区环境污染治理时 ,应切实加强矿区绿化工作 ,扩大植被覆盖率 ,保持矿区生态平衡 ,促进矿区的可持续发展。     

低温等离子体对血管内金属支架的表面改性

生物材料用于人体必须要具备生物相容性。尤其是与血液相接触的材料如血管内支架必须要具备血液相容性。材料的表面特性直接影响血液系统中是否会出现血栓。本文针对金属血管内支架的表面特性、与血液的界面反应以及用于提高血液相容性的低温等离子表面改性进行了简要综述     

高纯超细氧化铝的制备

介绍一种利用氧化铝生产过程的中间物料———铝酸钠溶液 ,生产高纯超细氧化铝的方法 ,即利用钡盐净化铝酸钠溶液 ,得到A/S >10 0 0 0的精制溶液 ,再进行种分分解 ,得到超细Al(OH) 3 ,经过酸洗 ,最终得到纯度达 99 99% ,粒度 90 %小于 2 μm高纯超细氧化铝。     

电渗析器免拆清洗实例

用静态溶垢试验和静态模拟试验选出的清洗剂清洗电渗析器，结果表明：用质量分数为2％ HCl，5％多聚磷酸盐，2％HCl 2％CaCO3，0.1mol／L NaOH依次循环清洗电渗析器可清洗掉常见电渗析器垢物和污染物．     

Preparation of Ultra—fine Aluminum Nitride in Thermal Plasma

Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor.The average size of aluminum nitride particle is 0.11μm measured by scanning electric mirror(SEM),and the purity is at least over90% evaluated by X-Ray diffraction(XRD).The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3.Typical experimental parameters such as the feed rate of raw material,the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

N‐(4‐Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4‐dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o‐nitrobenzyl cholate, with the new copolymers. Second, o‐nitrobenzyl cholate was introduced into the copolymers using 1,8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep–UV light and development with aqueous Na₂CO₃ (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 μm and an oxygen‐plasma etching rate was 1/5.3 to that of hard‐baked HPR‐204. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 2791–2798, 2002; DOI 10.1002/app.10255