Photoluminescence characterization of the effects of rapid thermal annealing on AlGaAs/GaAs modulation-doped quantum wells

In this study, we describe the effects of rapid thermal annealing on the electrical and optical properties of modulation-doped quantum wells (MDQWs). The sheet carrier concentration in MDQW structures which have been annealed in contact with a piece of GaAs tends to decrease with increasing annealing time due to Si auto-compensation in the doped AlGaAs regions. The high energy cut-off point of 4.2 K PL spectra, which occurs at the Fermi energy, and the 77 K PL linewidth are accurate measures of sheet carrier density. These two parameters track variations in carrier density produced by annealing. Photoluminescence spectra also provide additional insight into annealing-induced changes such as Si migration, which causes a degradation in the mobility of the two-dimensional electron gas.     

Time‐resolved investigation of Cu(In,Ga)Se2 growth and Ga gradient formation during fast selenisation of metallic precursors

Ga segregation at the backside of Cu(In,Ga)Se₂ solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu–In–Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real‐time synchrotron‐based X‐ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross‐sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In–Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu–In–Ga phase. Surprisingly, CuInSe₂ starts to form at the surface on top of the In–Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga‐rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 min reached conversion efficiencies of up to 14.2 % (total area, without anti‐reflective coating). The evolution of the Cu(In,Ga)Se₂ diffraction signals reveals that the minimum process time for high‐quality Cu(In,Ga)Se₂ absorbers is limited by cation ordering rather than Se incorporation. Copyright © 2014 John Wiley & Sons, Ltd.     

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明:使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.     

预设升温速度对W-Cu合金性能的影响

采用Gleeble—3500D热模拟机,通过对烧结体密度、显微结构以及硬度的分析,研究了电场作用下预设升温速度对W-20Cu体系快速烧结的影响。结果表明:W-20Cu复合粉在800℃、较短时间(3min)内进行快速烧结可得到烧结性能良好、平均晶粒尺寸约0.4μm的W-Cu合金;并且随着预设升温速度的提高,电场的作用愈强,压坯所获得的热流密度愈大,这有利于烧结体的致密化;同时,预设升温速度的提高,合金的硬度呈递增趋势。     

Simulations and experiments of three-dimensional paddle shift for IC packaging

Paddle shift is one of the most serious defects which may arise during the IC encapsulation of leadframe-type packages. The term “paddle shift” means the deflection of the leadframe-pad and die as a result of the pressure difference between the top and bottom mold cavities. In extreme cases, paddle shift could lead to a substantial reduction in the reliability of package.This paper employed a computational approach to predict the paddle shift quantity during the IC packaging process. The approach was based on precise finite element (FE) models and flow-structure decoupled analyses. Two kinds of FE models were needed for the decoupled analyses, namely a 3D FE model for the mold filling analysis (i.e. fluid-flow mesh) and a 3D FE model for the structural analysis (i.e. paddle mesh). The aim of the mold filling analysis was to identify the pressure distribution acting on the paddle structure during the encapsulation process, while the objective of the structural analysis was to determine the amount of paddle shift which was caused by pressure distribution.To investigate the relationship between the package geometry and the amount of paddle shift, the present simulations considered six TQFP (Thin quad flat package) models with different geometrical parameters. The simulation results for the paddle shift were compared with the experimental results to demonstrate the accuracy of the proposed numerical approach. It was found that a good agreement exists between the two sets of results.     

A Novel Magnetic Hardening Mechanism for Nd-Fe-B Permanent Magnets Based on Solid-State Phase Transformation

Permanent magnets based on neodymium-iron-boron (Nd-Fe-B) alloys provide the highest performance and energy density, finding usage in many high-tech applications. Their magnetic performance relies on the intrinsic properties of the hard-magnetic Nd₂Fe₁₄B phase combined with control over the microstructure during production. In this study, a novel magnetic hardening mechanism is described in such materials based on a solid-state phase transformation. Using modified Nd-Fe-B alloys of the type Nd₁₆Fe_bal-x-y-zCo_xMo_yCu_zB₇ for the first time it is revealed how the microstructural transformation from the metastable Nd₂Fe₁₇B_x phase to the hard-magnetic Nd₂Fe₁₄B phase can be thermally controlled, leading to an astonishing increase in coercivity from ≈200 kAm⁻¹ to almost 700 kAm⁻¹. Furthermore, after thermally treating a quenched sample of Nd₁₆Fe₅₆Co₂₀Mo₂Cu₂B₇, the presence of Mo leads to the formation of fine FeMo₂B₂ precipitates, in the range from micrometers down to a few nanometers. These precipitates are responsible for the refinement of the Nd₂Fe₁₄B grains and so for the high coercivity. This mechanism can be incorporated into existing manufacturing processes and can prove to be applicable to novel fabrication routes for Nd-Fe-B magnets, such as additive manufacturing.     

贴片机X/Y轴快速高精度定位的实现

负载惯量和外界干扰是影响贴片机X,Y轴快速高精度定位的两个关键因素。本文针对负载惯量和外界干扰对控制性能的影响,提出了基于RBF神经网络的自适应滑模控制算法。利用RBF神经网络的万能逼近特性实现对外加干扰和被控对象模型信息的逼近,运用自适应控制算法计算前馈补偿量以补偿负载惯量和摩擦力对运动性能的影响,采用滑模控制算法以抑制其他不确定干扰对运动控制的影响。通过仿真分析可以得出,所采用的控制算法能够有效地补偿负载惯量和外界干扰对定位性能的影响,从而实现贴片机X,Y轴的快速高精度定位。     

退火对射频磁控溅射氧化锌薄膜性能的影响

采用射频磁控溅射技术在SiO2/Si上淀积高c轴取向的ZnO薄膜,在氧气和氩气的混合气氛、不同温度(400~900℃)下进行快速热退火处理。利用X-射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和透射电镜(TEM)对薄膜结构、形貌与界面状态性能进行了分析。研究结果表明,ZnO薄膜的晶粒尺寸随着退火温度的升高而增大,衍射峰强度增强,峰位随之偏移;SEM分析显示薄膜呈柱状生长,表现出较好的c轴取向性;TEM分析表明ZnO与下电极Pt是呈共格生长,晶格匹配很好。     

锑化铟离子注入退火技术研究

对锑化铟（InSb）铍离子（Be+）注入后的快速退火技术进行了研究,并对不同退火温度和时间的晶片进行了工艺实验,通过测试其PN结I-V特性,对比了不同快速退火条件对PN结特性的影响,确定在一定快速热退火条件下可以获得高质量的PN结,并对试验结果进行了分析。     

基于传输零点的广义切比雪夫型LC滤波器快速设计法

通过对不同结构的广义切比雪夫型LC滤波器的传输零点特性进行分析验证,得到适用于N阶广义切比雪夫型LC滤波器传输零点特性的结论。基于这些结论提出一种快速设计广义切比雪夫型LC滤波器的方法,大大缩短了设计滤波器的时间。并且该方法可以在实现滤波器带外截止特性的同时,实现滤波器小型化,在科学研究和工程应用中具有重要意义。