New Insight into Microstructure Engineering of Ni-Rich Layered Oxide Cathode for High Performance Lithium Ion Batteries

Ni-rich layered LiNi_xCo_yMn_1−x−yO₂ (LNCM) with Ni content over >90% is considered as a promising lithium ion battery (LIB) cathode, attributed by its low cost and high practical capacity. However, Ni-rich LNCM inevitably suffers rapid capacity fading at a high state of charge due to the mechanochemical breakdown; in particular, the microcrack formation has been regarded as one of the main culprits for Ni-rich layered cathode failure. To address these issues, Ni-rich layered cathodes with a textured microstructure are developed by phosphorous and boron doping. Attributed by the textured morphology, both phosphorous- and boron-doped cathodes suppress microcrack formation and show enhanced cycle stability compared to the undoped cathode. However, there exists a meaningful capacity retention difference between the doped cathodes. By adapting the various analysis techniques, it is shown that the boron-doped Ni-rich layered cathode displays better cycle stability not only by its ability to suppress microcracks during cycling but also by its primary particle morphology that is reluctant to oxygen evolution. The present work reveals that not only restraint of particle cracks but also suppression of oxygen release by developing the oxygen stable facets is important for further improvements in state-of-the-art Li ion battery Ni-rich layered cathode materials.     

碳化硼厚板的激光切割工艺及其机制

介绍了碳化硼陶瓷加工中存在的主要问题,将激光技术应用于加工碳化硼陶瓷上,研究出一种新型加工方法,设计出两种有效的激光切割方法并对碳化硼陶瓷进行切割。在实验基础上分析了激光加工参数对加工的影响,采用扫描电镜(SEM)对各种激光切割工艺的断口进行分析和讨论,提出激光加工碳化硼陶瓷的自行断裂机制。实验结果表明,在特定的功率下激光能够用来加工碳化硼陶瓷厚板。对于厚度为5.5 mm碳化硼陶瓷板,Nd∶YAG激光平均功率为130 W时,激光束沿同一位置重复走刀两次即可切断,最高切割速度可达到120 mm/min,可以做到无微裂纹切割。     

硼扩散技术研究

对硼扩散浓度和扩散深度的控制技术进行了研究。通过采用两步扩散步骤、预扩散采用双面扩散的方式、再分布采用密闭碳化硅管、控制扩散温度和扩散时间,有效地控制了扩散层浓度和结深。     

Surface Growth of Boron Nitride Nanotubes through Boron Source Design

Boron nitride nanotubes (BNNTs) are promising materials due to their unique physical and chemical properties. Fabrication technologies based on gas-phase reactions reduce the control and collection efficiency of BNNTs due to reactant and product dispersion within the reaction vessel. A surface growth method that allows for controllable growth of BNNTs in certain regions using a preburied boron source is introduced. This work leverages the high solubility of boron in metals to create a boronized layer on the surface which serves as the boron source to confine the growth of BNNTs. Dense and uniform BNNTs are obtained after loading catalysts onto the boronized substrate and annealing under ammonia. Confirmatory experiments demonstrate that the boride layer provides boron for BNNTs growth. Furthermore, the patterned growth of BNNTs is realized by patterning the boronizing region, demonstrating the controllability of this method. In addition, the Ni substrate with BNNTs growth exhibits better performance in corrosion resistance and thermal conductivity than pure Ni. This study introduces an alternative strategy for the surface growth of BNNTs based on boron source design, which offers new possibilities for the controllable preparation of BNNTs for various applications.     

Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

D_(564)与液体矿提硼

介绍国产树脂 D564从液体硼矿中提硼的性能 ,通过利用四川某地卤水进行穿漏曲线研究 ,指明了现产 D564树脂的适用范围及今后提硼树脂的研究方向。     

硼粉中和改性对B/HTPB混合物流变性能影响研究

为减少硼粉表面的B2O3、H3BO3酸性杂质,无定形硼粉分别用氨水气相(B-1)、氨水液相(B-2)和NaOH溶液(B-3)进行了中和处理。通过HAAKE流变仪研究了中和硼粉B-1、B-2和B-3与HTPB混合物的流变特性,结果表明,随混合时间增加,B-1/HTPB混合物的表观黏度和屈服值增加快,B-2/HTPB混合物增加缓慢,B-3/HTPB混合物几乎不变。通过酸度、TG、IR、XRD等测试探讨了三种中和处理硼粉的机理,结果表明,B-1/HTPB流变性能的改善是由于硼粉表面物理吸附了NH3,其可能隔绝了H3BO3与HTPB的反应,而在混合过程NH3的脱附使B-1/HTPB混合物凝胶,流变性能变差,B-2/HTPB混合物流变性能的改善可能由于硼粉表面酸性H3BO3杂质与氨水生成了少量水溶性化合物,B-3/HTPB混合物良好的流变性能是由于NaOH溶液中和处理硼粉过程生成了水溶性的NaBO2,使硼粉表面的H3BO3杂质含量降低。     

AP包覆超细硼粉的改进方法

采用沉积法,以甲醇、丙酮为溶剂,AP为主要原料,对超细硼粉进行包覆。研究了溶剂、蒸发速率及氨基硅烷偶联剂对包覆效果的影响,并采用红外光谱、热分析、原子力显微镜、透射电镜等手段分析了包覆效果。结果表明,最佳的蒸发速率为10g.h-1;包覆前先对硼粉进行硅烷偶联剂预处理,会使硼粉的表面沉积更均匀,包覆效果更好;包覆后硼粒子表面规整,而且外表面存在较明显的包覆层。