A spatial variable selection method for monitoring product surface

Two-dimensional (2-D) data maps are generated in certain advanced manufacturing processes. Such maps contain rich information about process variation and product quality status. As a proven effective quality control technique, statistical process control (SPC) has been widely used in different processes for shift detection and assignable cause identification. However, charting algorithms for 2-D data maps are still vacant. This paper proposes a variable selection-based SPC method for monitoring 2-D wafer surface. The fused LASSO algorithm is firstly employed to identify potentially shifted sites on the surface; a charting statistic is then developed to detect statistically significant shifts. As the variable selection algorithm can nicely preserve shift patterns in spatial clusters, the newly proposed chart is proved to be both effective in detecting shifts and capable of providing diagnostic information for process improvement. Extensive Monte Carlo simulations and a real example have been used to demonstrate the effectiveness and usage of the proposed method.     

A performance analytical model of automated material handling system for semiconductor wafer fabrication system

To effectively analyse and evaluate the performances of closed-loop automated material handling system (AMHS) with shortcut and blocking in semiconductor wafer fabrication system, a modified Markov chain model (MMCM) has been proposed. The system characteristics, such as vehicle blockage and system’s shortcut configuration, are well considered in the MMCM. The state space explosion problem and computational challenge due to the increase of AMHS scale can be effectively eliminated. With production data from Interbay material handling system of a 300-mm semiconductor wafer fabrication line, the proposed MMCM is compared with simulation analysis model. The results demonstrate that the proposed MMCM is an effective modelling methodology for AMHS’s performance analysis at system design stage.     

半导体照明中结温的电学法测试与优化

基于电学法测试半导体照明的结温,实现了结温测试的电路,采用脉冲调制对LED的瞬态结温值进行测试.实脸发现,结温与正向电压的标定系数K值是影响结温测试精度的主要因素,分析了产生误差的主要原因,并对该系数进行修正.测试结果表明:结温的实测值与参考值有良好的一致性,存在误差的原因是采样的延时时间较长,可提高数据采样率和剔除不...     

Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles

Abstract— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO^x gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.     

多组合设备的调度控制研究综述

在半导体芯片制造中越来越广泛使用多组合设备.本文介绍了多组合设备的结构配置、生产运行过程、调度控制问题的一般特征条件、应该满足的约束及周期性调度策略;分析了问题的复杂性因素.从多组合设备的结构特征、运行过程特征两方面分类综述了调度问题的建模、分析方法、调度算法及存在的问题,最后指出了未来的研究方向.     

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials.     

用于大功率半导体激光器的新型焊料

在大功率半导体激光器列阵及叠阵的组装中,焊料的选择是极其关键的,因为焊料直接参与对激光器的导电、导热激光器所需的电流全部从焊料通过,而半导体激光器列阵或叠阵工作时电流是很大的,可达50A～100A。同时半导体激光器工作时产生的热量非常大,如焊料的导热性不好,由于电流的热效应,就会在焊料上产生巨大的热量,使焊料熔化。文中研制了一种新型的焊料,这种焊料在两层铟之间蒸镀几层金,焊料由钨/镍/金/铟/铜等多层金属构成。利用这种焊料研制出脉冲功率达100W的半导体激光器列阵。