Processing of Yttria-Alumina Coated Silicon Nitride Slips by Slip Casting

Si₃N₄powders coated with 6 wt% Y₂O₃and 4 wt% Al₂O₃were prepared by coprecipitation. The resulting powders were dispersed in water at different pH values and with addition of various amounts of ammonium polyacrylate (NH₄PA) to produce 32 vol% slips. The influence of the amount of NH₄PA solution added and pH on the rheological properties of 32 vol% coated Si₃N₄slips were studied. In addition, the sintered density of cast samples was determined and related to the degree of slip dispersion. The adsorption of the NH₄PA on the coated particle surface was rather high and the surface became saturated near 0.86 mg/m²at pH 9.2. High NH₄PA concentrations (1.7–3 wt%) were necessary to obtain well dispersed 32 vol% coated Si₃N₄slips at pH 9.2. The best stabilization was obtained with the addition of 2.3 wt% NH₄PA; in this condition, the viscosity reached a minimum value of 35 mPa.s at 100 s^–1. The slip viscosity increased with increasing pH from 9.2 to 10.2. Slips with low viscosities gave a more dense packing of cast samples and consequently higher sintered density values.     

提高自蔓延高温合成陶瓷内衬钢管性能的研究

在概括了自蔓延高温合成陶瓷内衬钢管的制备原理基础上，从降低陶瓷层孔隙率，减少陶瓷层裂纹和提高陶瓷层结合强度等方面，论述了提高自蔓延高温合成陶瓷内衬钢管性能的措施，对自蔓延高温合成陶瓷内衬钢管的应用现状及展望进行了评述。     

硅光电负阻器件的构成原理与分类

将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法     

Transmittance and cathodoluminescence of AlN ceramics sintered with Ca3Al2O6 as sintering additive

Aluminum nitride ceramics were prepared by sintering with 0–4.8 mass% of Ca₃Al₂O₆ (C₃A) as a sintering additive. The transmittance in the range of 260–550 nm increased with increasing amount of C₃A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C₃A. From the results, the increase of the transmittance in the range of 260–550 nm was considered to be related to the decrease of the oxygen-induced defect density.     

Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

Spin Dependent Hopping in Ti Doped La0.67 Ca0.33 MnO3

A systematic investigation of the magnetic and transport properties of Ti doped La0.67Ca0.33MnO3 was reported. The Ti substitution for Mn ions results in a reduction in ferromagnetism and conductivity. The metal-insulator transition temperature is close to Curie temperature which decreases from 274 to 82 K as x increases from 0 to 0.17. The most important effect of Ti doping is to introduce spin clusters in the samples due to the distortion of local lattice and the inhomogeneous magnetic structure induced primarily by the random distribution of Mn ions. A maximum magnetoresistance ratio as large as 90% in 1 T at 122 K was obtained for the sample with x =0. 055, which is four times larger than that obtained for LCMO sample at 272 K. There is a remarkable field-history dependent MR in the cooling process for the doped samples while such phenomenon disappears in the warming run. The resistivity follows well the variable range hopping behavior in paramagnetic state. Both the size effect and spin dependent hopping of carriers between the spin clusters should be considered in this system.     

液晶光阀光电导层光吸收系数的研究

用化学气相沉积法制备了液晶光阀中光电导层———非晶硅薄膜,从实验中得出最佳制备工艺的参数取值。给出了用包络线法测量非晶硅薄膜光吸收系数的原理,测量了样品的光吸收系数随波长的变化规律。得到样品在最佳工艺条件下的光吸收系数高于1×103cm-1。     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。