Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

金属PTC陶瓷复合材料结构及其导电机理

研究了金属ＰＴＣ陶瓷复合材料的电学性能和其材料组分。结果表明，掺入金属的ＰＴＣ陶瓷材料经氮气中烧结，然后在空气中进行热处理，材料表面形成高势垒层，金属ＰＴＣ陶瓷复合材料的室温电阻较ＰＴＣ的陶瓷高。样品之中存在大量不同类型的极化，在低温时样品电阻较高，温度增加后，大量各种类型离子极化出现，在变价金属铁的变价导电作用下，削弱表面势垒，使金属ＰＴＣ陶瓷复合材料电阻降低，表现出ＮＴＣ现象。在电场作用下，正负电荷、晶粒畸变和空位缺陷等产生空间电荷极化使金属ＰＴＣ陶瓷复合材料有较高介电常数。介电损耗（ｔｇδ）频谱和介电δ温度谱上都出现一个介电峰，其主要原因是跃迁极化，金属阳离子由一个位置跃迁到另一个位置，在介电损耗所对应的频率和温度时出现跃迁极化率最大     

热释电系数的测量方法

描述热释电系数的两种测量方法。其一为电荷积分法，测试系统简单，测量数据准确，且能满足零电场条件下的测量。其二为动态电流法，采用调制热源技术，研究在特定温度条件下热释电材料的动态热释电响应。     

氮化镓低维纳米结构的制备与表征

主要是以氧化镓为原料,通过气相沉积法,制备出GaN纳米线和纳米带.通过X-射线衍射（XRD）,扫面电镜（SEM）和高分辨透射电镜（HRTEM）等测试手段对其形貌进行了表征和分析.研究了实验过程中工艺条件的改变对所制备GaN纳米结构形貌特征的影响.对两种GaN纳米材料的拉曼散射光谱进行了分析.     

Origin of visible photoluminescence from porous silicon as studied by Raman spectroscopy

In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiH _x and siloxene) and defects at Si/SiO₂ interfaces as luminescent centres.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

电致伸缩陶瓷微位移器非线性的数值方法补偿

本文通过对电致伸缩陶瓷材料的非线性进行分析。找到了补偿电致伸缩陶瓷非线性的数值方法，并对不同回程大小的电滞回线进行了分段处理，使补偿结果更为精确。     

Microstructure-related fracture toughness and fatigue crack growth behaviour in toughened, anhydride-cured epoxy resins

Fracture toughness and fatigue crack propagation (FCP) of plain and modified anhydride-cured epoxy resin (EP) were studied at ambient temperature. Liquid carboxyl-terminated acrylonitrile-butadiene (CTBN) and silicon (SI) rubber dispersions were used as tougheners for the EP. The morphology of the modified EP was characterized by dynamic mechanical analysis (DMA) and by scanning electron microscopy (SEM). The fracture toughness, K_c, of the compositions decreased with increasing deformation rate. K_c of the EP was slightly improved by CTBN addition and practically unaffected by incorporation of the SI dispersion when tests were performed at low cross-head speed, v. Both modifiers improved K_c at high v, and also the resistance to FCP, by shifting the curves to higher stress intensity factor ranges, ΔK, by comparison with the plain EP. It was established that both fracture and fatigue performance rely on the compliance, J_R, at the rubbery plateau, and thus on the apparent molecular mass between crosslinks, M_c. The failure mechanisms were less dependent upon the loading mode (fracture, fatigue), but differed basically for the various modifiers. Rubber-induced cavitation and shear yielding of the EP were dominant for CTBN, whereas crack bifurcation and branching controlled the cracking in SI-modified EP. The simultaneous use of both modifiers resulted in a synergistic effect for both the fracture toughness at high deformation rate and the FCP behavior.     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

树脂热解炭制备碳化硅晶须

用自制的配合醛树脂热解和炭源，用ＳＩＯ２超细汾作原，根据碳热还原原理，利用常规加热和微波加热两种方式，分别制备了直径在纳米级的ＳｉＣ晶须，Ｘ射线衍射、透射电检测结果表明：制备工艺和条件对ＳｉＣ晶须的性质有较大的影响。