用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

Oxidation of porous nanocrystalline titanium nitride. II. Scale structure and composition

We have used x-ray phase analysis to study the composition of the products of reaction between oxygen and nanocrystalline powders with particle sizes 15, 40, 55, and 80 nm, and also specimens pressed (and sintered) from them. The powders were oxidized in air at 100°C (400 h) to 500°C (5 min), while the sintered specimens were oxidized at 600–900°C for 15, 120, and 240 min. In all cases, in the initial oxidation step the oxynitride Ti(O_xN_y) is formed, which over time is oxidized to TiO, Ti₂O₃, Ti₃O₅, TiO₂ (anatase) and TiO₂ (rutile). In the range 600–800°C, formation of a continuous oxide layer and conversion of anatase to rutile slows down diffusion of oxygen in the scale. We have established that at 900°C, the growth rate of the scale thickness increases and so the reflections from the oxynitride are barely noticeable on the diffraction patterns taken from the surface of the oxidized specimen. In these diffraction patterns, along with strong reflections from the rutile, we also observed weak reflections from lower oxides and anatase, which may be due to reaction between oxygen and the titanium ions diffused to the scale surface. We have concluded that at T > 850°C, the mechanism for oxidation of TiN changes. This is due to superposition of counterdiffusion of titanium ions on the diffusion of oxygen. __________ Translated from Poroshkovaya Metallurgiya, Nos. 3–4(448), pp. 72–78, March–April, 2006.     

轴向进给比对薄壁管滚珠旋压影响的有限元分析

通过有限元数值模拟方法得出滚珠旋压中薄壁管在不同凹模旋转速度条件下轴向进给比的变化规律及工件的成形规律,并对模拟结果的等效应变分布做了分析,并与实验结果进行比较,给出薄壁管滚珠旋压时进给比的选取范围.结果表明,进给比对滚珠旋压中薄壁管直径的胀缩和工件的质量有着显著的影响.另外,从计算的模具所受的三向载荷变化情况分析了模具的使用寿命.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Pressure infiltration of boron nitride preforms with molten aluminum

The infiltration of compacted cubic BN (cBN) with molten aluminum has been investigated as a potential route for a cheap and easy method of manufacturing cBN/metal composites. CBN compacts have been infiltrated with molten Al at a temperature between 670 and 800 °C and pressure of 15 MPa in vacuum. At these temperatures no pronounced interactions between hexagonal and cubic BN with Al was observed, allowing the complete infiltration of cBN with 12 μm mean grain size. After infiltration at 800 °C, the temperature was increased without pressure to convert aluminum into borides and AlN. The hardness of the resulting materials depends on the content of hexagonal, cubic BN and the rate of conversion of Al into borides and AlN. The infiltration height of less than 1 mm obtained from infiltrating the 3 μm cBN powder green compacts gave a hardness of 22.0 ± 0.6 GPa after heat treatment.     

尖晶石型纳米钴蓝陶瓷颜料的制备

采用化学共沉淀法作为钴蓝颜料的制备方法,探讨了主要工艺因素对制备钴蓝颜料性能的影响,对制备的样品进行了测试与表征。结果表明:Co2+和Al3+物质的量比为1∶2.5时,制备的钴蓝样品颜色饱和度与明度最高,沉淀剂为尿素时制得的样品的粒度最小,粒度分布比较均匀。前驱体的洗涤过程采取水洗加醇洗的方法可有效减少样品的硬团聚现象,且前驱体的最佳煅烧温度为950℃左右。     

浦项开发35W270以上牌号无取向硅钢

钢中加Sn和Sb得到优良的磁性，铁损低和磁感高。与加B的比较，晶粒大，立方织构、高斯织构、（100）[uvw]纤维体积份数很高和γ-纤维体积份数很低，增加磁感的磁各向异性和降低铁损的磁各向异性。进行常化与未经常化的比较，最终晶粒大。（100）纤维份数：热轧板的最低，冷扎后变成最高。铁损的各向异性与织构因数之间成反比，磁感的各向异性与织构因数之问成正比。开发出了35W270-250高牌号无取向硅钢。     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

关于粉体成球机盘体几何形状的研究

通过对粉体小球在粉体成球机盘底上运动轨线的研究,利用Euler定理,结合其参数特点,得到了不同几何形状的盘底在成球过程中对粉体小球运动的影响,球面盘底较平面盘底更有利于成球的结论。