溶胶－凝胶二氧化硅驻极体薄膜的物理化学改性

实验研究了由溶胶－凝胶法制备二氧化硅驻极体薄膜的工艺。用红外透射谱、扫描电子显微镜以及驻极体等温表面电位测量和热刺激放电等实验考察了热处理和化学表面修正两个关键工艺对溶胶－凝胶二氧化硅样品驻极体性能的影响。结果表明经过高温条件下一定时间的热处理和化学表面修正，可以制备出性能优良的驻极体薄膜     

TFT有源矩阵α－Si∶H薄膜PECVD淀积工艺研究

分析了α－Ｓｉ∶Ｈ薄膜的质量和厚度对α－Ｓｉ∶ＨＴＦＴ关键性指标的影响，深入、详细地讨论了其ＰＥＣＶＤ淀积工艺，并在实验的基础上确定了最佳淀积工艺参数，从而获得了高性能的７５ｍｍ３７２×２７６像素α－Ｓｉ∶ＨＴＦＴ有源矩阵     

溶胶-凝胶法制备(Sr,Pb)TiO3纳米晶粉及表征

采用溶胶－凝胶法成功地合成了（Sr,Pb)TiO3纳米晶粉，并利用FTIR技术对凝胶的形成过程及350℃，1．5h煅烧获得的粉体材料进行了表征。实验以TG－DSC分析作为拟定煅烧温度的依据，以XRD作为煅烧产物的分析手段，最佳煅烧温度为600℃，所合成的（Sr,Pb)TiO3纳米晶粉的平均晶粒尺寸约为21nm，属钙钛矿型立方顺电相结构。     

Holmium-doped Porous Silicon Prepared by a New Electrochemical Approach and Its Photoluminescence

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特种钢用结晶器铜管破裂原因分析

通过对某特钢厂破裂的结晶器铜管进行金相实验、扫描电镜和能谱分析,并结合结晶器的生产、使用及失效过程情况,综合受力分析,认为铜管破裂原因主要是环境介质硫渗入形成硫化物,在拉应力作用下,裂纹沿脆性质点扩展导致的破坏。     

Transistors made in laser recrystallized polysilicon on insulator films

lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm²/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theI _D v-V _D curves of the devices with physical models was found in good agreement.     

Influence of silicon on the oxidation of titanium between 550 and 700°C

The oxidation behavior of Ti-Si alloys (0.25, 0.5, and 1 Wt. % Si) was investigated between 550 and 700°C; in oxygen by continuous thermogravimetry for a maximum duration of about 500 hr and, in air by daily weighing for durations from a few hundred to several thousand hours. The kinetics results revealed that the presence of silicon leads to a decrease in oxidation rate which is more evident when the temperature is raised and the silicon content is increased. Morphological and structural examinations revealed that silicon modifies the internal architecture of oxide layers when compared with unalloyed titanium; in particular, reduced porosity in the layers is observed. Analysis showed that silicon is uniformly distributed in the oxide layer. However, while part of the silicon is in solid solution in the rutile, some is also precipitated as small crystals ( <1 m at 850°C) of SiO₂, of cristobalite structure. The adherence of oxide layers to the metal substrate was measured after cooling of samples; the addition of silicon has been observed to modify, in a manner dependent on its content, the adherence of oxide layers.     

Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization

Partially crystalline Si₃N₄, with nanosized crystals and a specific surface area greater than 200 m²/g, is obtained by pyrolysis of a commercially available vinylic polysilane in a stream of anhydrous NH₃ to 1000°C. This polymer does not contain N initially. Crystallization to high-purity α-Si₃N₄ proceeds with additional heating above 1400°C under N₂. The changes in crystallinity, powder morphology, infrared spectra, and elemental compositions, for samples annealed from 1000° to 1600°C under N₂, are consistent with an amorphous-to-crystalline transformation. Although macroscopic consolidation and local densification occur at 1400°C, volatilization and accompanying weight loss limit bulk densification. The effect of temperature on specific surface area is examined and related to the sintering process. These results are applicable to pyrolysis, decomposition, and crystallization studies of ceramics synthesized by polymeric precursor routes.     

Preparation of Silicon Carbide/Aluminum Nitride Ceramics Using Organometallic Precursors

Solid solutions of 2H -SiC/AlN can be prepared at temperatures less than 1600°C by rapid pyrolysis ("hot drop") of mixtures of [(Me₃Si)_0.80((CH₂=CH)MeSi)_1.0(MeHSi)_0.35] _n (VPS) or [MeHSiCH₂] _n (MPCS) with [R₂AlNH₂]₃, where R=Et, i -Bu or simply by slow pyrolysis of the precursor mixture in the case of [Et₂AlNH₂]₃. In contrast, slow pyrolysis of mixtures of VPS or MPCS with [ i -Bu₂AlNH₂]₃ yields a composite of 2 H -AlN and 3 C -SiC at 1600°C, which transforms into a single 2 H -SiC/AlN solid solution on heating to 2000°C. The influences of the nature of the precursor and processing conditions on the structure, composition, and purity of the SiC/AlN materials are discussed.     

硅压阻式气压高度计的设计与实现

采用硅压阻式压力传感器,以ATmega88PA为控制器设计了气压高度计。内嵌全温度范围的曲面拟合算法进行温度补偿及线性化处理,解决了压力传感器的温漂和非线性问题,并用海拔高度与气压的关系计算高度。测量结果通过RS-485接口发送给上位机。测试结果表明,该气压高度计压力测量误差优于0.50‰,分辨率为0.01 h Pa,线性度为0.999 9;标准大气环境下高度测量误差为0.16 m,线性度为0.999 8。该气压高度计具有质量小、功耗低、精度高、工作可靠等优点。