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41.
S. P. Ashburn M. C. Öztürk J. J. Wortman G. Harris J. Honeycutt D. M. Maher 《Journal of Electronic Materials》1992,21(1):81-86
Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited
by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid
thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The
sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides
were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures
(425° C); however, the stability of the material is poor at elevated temperatures. 相似文献
42.
Hongyu Wang Yolande Berta Gary S. Fischman 《Journal of the American Ceramic Society》1992,75(5):1080-1084
The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed-packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single-crystal whiskers, which may be evidence that the whiskers were formed by a two-stage mechanism. 相似文献
43.
针对天铁板坯连铸机一年多来发生的漏钢事故,分析了产生的原因,提出了预防改进的措施,对今后的生产有很好的指导意义。 相似文献
44.
A silicide coating was prepared on Ti3SiC2-based ceramic by pack cementation to improve the oxidation resistance of Ti3SiC2, which is a technologically important material for high temperature applications. The microstructure, phase composition and
oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly
composed of TiSi2 and SiC. A single layer of a mixture of SiO2 and TiO2 was formed on the surface of the coated sample during isothermal oxidation at 1100 °C and 1200 °C for 20h. Compared to Ti3SiC2, the parabolic rate constant of silicide coated Ti3SiC2 decreased by 2~3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than
Ti3SiC2 during the cyclic oxidation at 1100 °C for 400 times. However, during the preparation of the coating, a number of fine cracks
formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the
oxidation rate was accelerated, which degraded the oxidation resistance.
Electronic Publication 相似文献
45.
以乙醇为溶剂,正硅酸乙酯(TEOS,tetraethoxysilane)在氢氧化铵催化下水解缩聚为纳米尺度的无定型SiO2溶胶颗粒,二甲基二乙氧基硅烷(DDS,dimethyldiethoxysilane)在盐酸催化下水解缩聚为线状聚二甲基硅氧链.用混合溶胶在玻璃基片上旋转镀膜,然后于80℃空气气氛下热处理.实验证明通过DDS将疏水的双甲基链引入镀膜胶体,使膜兼具疏水性和减反射性能.利用激光散射粒度分析仪和电子显微镜研究了溶胶颗粒的粒度变化和聚集情况等溶胶微结构,用物理吸附仪研究了膜的孔结构,考察了热处理前后膜的疏水性和透射谱,得到了溶胶微结构与膜性能之间的关联. 相似文献
46.
In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review
our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal
annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and
silicon complexes (such as SiH
x
and siloxene) and defects at Si/SiO2 interfaces as luminescent centres. 相似文献
47.
本文对氧化非晶硅磷掺杂的工艺条件进行了研究,得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系,为非晶硅的有效掺杂和器件研究提供了依据。 相似文献
48.
Fracture toughness and fatigue crack propagation (FCP) of plain and modified anhydride-cured epoxy resin (EP) were studied at ambient temperature. Liquid carboxyl-terminated acrylonitrile-butadiene (CTBN) and silicon (SI) rubber dispersions were used as tougheners for the EP. The morphology of the modified EP was characterized by dynamic mechanical analysis (DMA) and by scanning electron microscopy (SEM). The fracture toughness, Kc, of the compositions decreased with increasing deformation rate. Kc of the EP was slightly improved by CTBN addition and practically unaffected by incorporation of the SI dispersion when tests were performed at low cross-head speed, v. Both modifiers improved Kc at high v, and also the resistance to FCP, by shifting the curves to higher stress intensity factor ranges, ΔK, by comparison with the plain EP. It was established that both fracture and fatigue performance rely on the compliance, JR, at the rubbery plateau, and thus on the apparent molecular mass between crosslinks, Mc. The failure mechanisms were less dependent upon the loading mode (fracture, fatigue), but differed basically for the various modifiers. Rubber-induced cavitation and shear yielding of the EP were dominant for CTBN, whereas crack bifurcation and branching controlled the cracking in SI-modified EP. The simultaneous use of both modifiers resulted in a synergistic effect for both the fracture toughness at high deformation rate and the FCP behavior. 相似文献
49.
树脂热解炭制备碳化硅晶须 总被引:6,自引:1,他引:5
用自制的配合醛树脂热解和炭源,用SIO2超细汾作原,根据碳热还原原理,利用常规加热和微波加热两种方式,分别制备了直径在纳米级的SiC晶须,X射线衍射、透射电检测结果表明:制备工艺和条件对SiC晶须的性质有较大的影响。 相似文献
50.
驻极体声传感器及其储电材料的现状 总被引:1,自引:0,他引:1
综述了驻极体声传感器及其储电材料近年来的迅猛发展。传统的FEP(tetrafluoroethylene—hexa—fluoropropylene copolymer)极体电容式声传感器及以铁电聚合物PVDF(poly vinylidene fluoride)家族为芯片的声传感器和超声抉能器仍焕发着青春活力。Si基微型驻极体声传感器的理论和实验研究已经日趋成熟,而用空间电荷型多孔聚合物驻极体压电薄膜为芯片可望研制出新一代声电和电声传感器、压力传感器和驱动器。 相似文献