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981.
982.
Ulf Arne Girhammar 《International Journal of Mechanical Sciences》2008,(12):1636-1649
An approximate second order analysis procedure for composite beam–columns with interlayer slip subjected to transverse loading and axial compressive loads is developed. The magnification factors to be applied to the first order solutions in order to estimate the deflections and internal forces obtained by the second order analysis approach are presented. The method of applying magnification factors to internal axial forces is discussed. The approximate second order analysis procedure is developed for the four Euler cases with various transverse load conditions. The procedure is applied to and the accuracy is illustrated for simply supported partially beam–columns of steel and concrete, and timber and concrete with different bending stiffness and interlayer slip properties. The deflections and internal forces obtained by the approximate method compared extremely well, except for slip forces in case of very flexible shear connectors, with those obtained by the more rigorous second order analysis approach for different composite action (partial interaction) parameters (shear connector stiffness values). The study also shows that the magnification factor associated with the deflections can be utilized to estimate also the internal actions, except shear forces in case of very flexible shear connectors, in the second order case with minimal error for simply supported beam–columns. Thus, for members with shear connector stiffness of structural significance the proposed approximate method can be used in general for simply supported beam–columns. For other boundary and loading conditions, the approximate method needs to be re-evaluated. The approach of using one magnification factor greatly simplifies the analysis task for those components. 相似文献
983.
The effect of temperature on gross slip fretting wear of cold-sprayed nickel coatings on Ti6Al4V interfaces 总被引:1,自引:0,他引:1
Fretting wear is an accumulation of damage that occurs at component interfaces that are subjected to high contact stresses coupled with low-amplitude oscillation. In metallic contacts, surface oxides, adhesion, and material transfer play a primary role in the initial stages of fretting wear degradation. Given these behaviors, the focus of this study was to determine the effect of temperature on inter-metallic fretting wear between Ti6Al4V (titanium, 6% aluminum, 4% vanadium) and cold-sprayed, commercially pure nickel coatings. The results presented herein show that increased temperature decreases friction through the formation of a uniform NiO layer, and by a reduction of Ni2O3 in contacts. In addition, it was found that a localized minimum friction coefficient is achieved at approximately 300 °C, above which friction increases slightly due to annealing of the cold-sprayed coatings. 相似文献
984.
A. G. Zayats 《Measurement Techniques》2008,51(11):1224-1233
Algorithms for choosing the optimum frequency band for the correlation processing of steady signals are proposed and specific
examples are considered. The particular features of the problem of filtering received signals for optimum and nonparametric
detection algorithms are considered.
Translated from Izmeritel'naya Tekhnika, No. 11, pp. 55–61, November, 2008. 相似文献
985.
We present a photoemission measurement of the valence band discontinuity, ΔEv, and the Fermi level, EF, position at the interface between different surface reconstructions of GaAs(100) and Ge. GaAs(100) exhibits a number of
surface reconstructions that differ in their As content and bonding configuration. The initial and final Fermi level position
is observed to move toward the conduction band as the As content of the starting surface increases. The observed change in
the final EF due to the variation in surface As content is 0.3 eV. The band offsets are the same (0.46±0.05) regardless of the starting
surface. The addition of As during the interface formation causes the Fermi level position to further move toward the conduction
bands of Ge and GaAs; however, it doesnot change the band offsets. We conclude that deposition-induced defects do not occur in sufficient density across the interface
to play a primary role in determining the GaAs/Ge(100) heterojunction potential step. 相似文献
986.
This work addresses the effect of small geometrical imperfections on adiabatic shear band (ASB) formation. The separate effect of the length and radius of short notches is systematically investigated in AM50 and Ti6Al4V alloys, using shear compression specimens. It is observed that the length of the imperfection does not influence ASB formation in these experiments. By contrast, the notch-root radius appears to be the dominant parameter for the two materials, in perfect agreement with the analytical predictions of Dinzart et al. [The catastrophic development of shear localization in thermoviscoplastic materials. J Phys 1994; IV(C8): 435–40]. The distribution of deformation energy over the gauge length is modeled numerically. The calculated average dynamic deformation energy levels are quite similar to those that are measured for the two investigated alloys. It is concluded that the global measure of the dynamic deformation energy provides valuable information about ASB failure from geometrical imperfections. 相似文献
987.
介绍了楔横轧成形过程的工艺参数及变形区参数,分析了楔横轧展宽区的金属变形情况及推导了变形区参数的工程计算公式。文末对鲤鱼钳毛坯进行了实例计算。 相似文献
988.
F. Banishoeib S. Fourier M. Breselge T.J. Cleij D. Vanderzande Le Huong Nguyen Niyazi Serdar Sariciftci 《Thin solid films》2008,516(12):3978-3988
Poly-(2,5-Thienylene Vinylene) (PTV) derivatives have been synthesised via the “dithiocarbamate precursor route” in good yield and satisfactory molecular weight. Structural characterisations of the conjugated PTV polymers reveal an optical band gap around 1.8 eV. Organic field effect transistors and organic based photovoltaic devices were made with the plain PTV, via a precursor approach. More specifically, solar cells were produced using a blend of the precursor PTV polymer and PCBM (1-(3-methoxycarbonyl) propyl-1-phenyl [6,6] C61) at various ratios, converted in situ in thin film. A promising power efficiency of 0.76% was achieved. 相似文献
989.
本文采用模型固体理论计算了In1-xGaxAsyP1-y/GaAs应变量子阱中电子和空穴的能带结构,研究了组分对能带的调制作用.结果表明,In1-xGaxAsyP1-y/GaAs量子阱的能带类型及带隙依赖于阱材料In1-xGaxAsyP1-y的组分。当y=1.0,x在0~1.0范围时,量子阱In1-xGaxAsyP1-y/GaAs的能带为类型Ⅰ;当y=0.6,x在0.32~1.0范围时,量子阱的能带为类型Ⅱ。即通过调整阱材料组分,可以方便实现这种量子阱的能带转型(即类型I-类型Ⅱ的转变)。 相似文献
990.