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41.
42.
BGA焊点的质量控制 总被引:1,自引:0,他引:1
BGA是现代组装技术的新概念,它的出现促进SMT(表面贴装技术)与SMD(表面贴装元器件)的发展和革新,并将成为高密度、高性能、多功能及高I/O数封装的最佳选择.本文结合实际工作中的一些体会和经验,就BGA焊点的接收标准、缺陷表现及可靠性等问题展开论述,特别对有争议的一种缺陷空洞进行较为详细透彻的分析,并提出一些改善BGA焊点质量的工艺改进的建议. 相似文献
43.
从六个方面内容进行了评述,并强调了电子产品实施无铅化是一个系统工程。企图从电子产品实施无铅化的提出、无铅化焊料的基本特性、无铅化焊料焊接时的特点与要求等出发,从而论述电子产品实施无铅化对电子元器(组)件、CCL基板材料、PCB基板的主要要求以及相关的测试与标准的制定等,其目的是使读者有一个较全面的了解,以利于电子产品(包含原材料、元器件、PCB、组装等)制造者、特别是相关的工程技术人员,从整体的关联或系统工程上来理解、研究和解决电子产品无铅化问题,使电子产品能顺利而迅速地从有铅化(锡-铅体系)时代过渡到无铅化(目前,最佳体系为锡-银-铜系列)时代。 相似文献
44.
波峰焊接工艺技术的研究 总被引:3,自引:0,他引:3
作为一种传统焊接技术,目前波峰焊依然在电子制造领域发挥着积极作用。本文介绍了波峰焊接技术的原理,并分别从焊接前的质量控制、生产工艺材料及工艺参数这三个方面探讨了提高波峰焊质量的有效方法。 相似文献
45.
Jung-Mo Kim Jae-Pil Jung Y. Norman Zhou Jong-Young Kim 《Journal of Electronic Materials》2008,37(3):324-330
Ultrasonic bonding of Si-dice to type FR-4 printed circuit boards (PCB) with Sn-3.5wt.%Ag solder at ambient temperature was
investigated. The under-bump metallization (UBM) on the Si-dice comprised Cu/Ni/Al from top to bottom with thicknesses of
0.4 μm, 0.4 μm, and 0.3 μm, respectively. The pads on the PCBs consisted of Au/Ni/Cu with thicknesses of 0.05/5/18 μm, sequentially from top to bottom. Solder was supplied as Sn-3.5wt.%Ag foil rolled to 100 μm thickness, and inserted in the joints. The ultrasonic bonding time was varied from 0.5 s to 3.0 s, and the ultrasonic power
was 1400 W. The experimental results showed that reliable joints could be produced between the Si-dice and the PCBs with Sn-3.5wt.%Ag
solder. The joint breaking force of “Si-die/solder/FR-4” increased with bonding times up to 2.5 s with a maximum value of
65 N. A bonding time of 3.0 s proved to be excessive, and resulted in cracks along the intermetallic compound between the
UBM and solder, which caused a decrease in the bond strength. The intermetallic compound produced by ultrasonic bonding between
the UBM and solder was confirmed to be (Cu, Ni)6Sn5.
An erratum to this article can be found at 相似文献
46.
V. Sivasubramaniam N.S. Bosco J. Janczak-Rusch J. Cugnoni J. Botsis 《Journal of Electronic Materials》2008,37(10):1598-1604
The effects of particle reinforcement of Sn-4.0wt.%Ag-0.5wt.%Cu (SAC405) lead-free solder on interfacial intermetallic layer
growth and strength of the ensuing joints through short-term isothermal aging (150°C) were studied. Composite solders were
prepared by either incorporating 2 wt.% Cu (3 μm to 20 μm) or Cu2O (∼150 nm) particles into SAC405 paste. Aggressive flux had the effect of reducing the Cu2O nanoparticles into metallic Cu which subsequently reacted with the solder alloy to form the Cu6Sn5 intermetallic. While all solders had similar interfacial intermetallic growth upon reflow, both of the composite solders’
growth rates slowed through aging to reach a common growth rate exponent of approximately 0.38, considerably lower than that
of the nonreinforced solder (n = 0.58). The nanoscale reinforced solder additionally exhibited the highest tensile strength in both the initial and aged
conditions, behavior also attributed to its quick conversion to a stable microstructure. 相似文献
47.
48.
Interfacial reactions between eutectic SnZn solder and bulk or thin-film Cu substrates are investigated and compared. The
thicknesses of bulk and thin-film Cu substrates are 0.5 mm and 4,000 ?, respectively. Different dominant reaction products
and interfacial microstructures are observed in these two types of interfacial reactions. In the bulk Cu type, the Cu5Zn8 phase is the dominant reaction product under reflow and solid-state annealing. However, the CuZn5 phase becomes the dominant reaction product in the thin-film Cu type. The Cu5Zn8 phase in the bulk Cu type remains as a uniform microstructure after reflow. After solid-state annealing, however, the Cu5Zn8 phase fractures and the Cu6Sn5 and Cu3Sn phases are formed at the Cu5Zn8/Cu interface. The CuZn5 phase in the thin-film Cu type ripens after reflow and the phase morphology is transformed from a uniform layer into separated
scallops. In situ observation of the interfacial microstructure after solid-state annealing reveals that prominent deformation occurs in the
solder region close to the interface in the bulk Cu type. While in the thin-film Cu type, the CuZn5 grain is extruded out of the interface. 相似文献
49.
The shear strength behavior and microstructural effects after aging for 100 h and 1,000 h at 150°C are reported for near-eutectic
Sn-Ag-Cu (SAC) solder joints (joining to Cu) made from Sn-3.5Ag (wt.%) and a set of SAC alloys (including Co- and Fe-modified
SAC alloys). All joints in the as-soldered and 100-h aged condition experienced shear failure in a ductile manner by either
uniform shear of the solder matrix (in the strongest solders) or by a more localized shear of the solder matrix adjacent to
the Cu6Sn5 interfacial layer, consistent with other observations. After 1,000 h of aging, a level of embrittlement of the Cu3Sn/Cu interface can be detected in some solder joints made with all of the SAC alloys and with Sn-3.5Ag, which can lead to
partial debonding during shear testing. However, only ductile failure was observed in all solder joints made from the Co-
and Fe-modified SAC alloys after aging for 1,000 h. Thus, the strategy of modifying a strong (high Cu content) SAC solder
alloy with a substitutional alloy addition for Cu seems to be effective for producing a solder joint that retains both strength
and ductility for extended isothermal aging at high temperatures. 相似文献
50.
Yoshikazu Takaku Lazuardi Felicia Ikuo Ohnuma Ryosuke Kainuma Kiyohito Ishida 《Journal of Electronic Materials》2008,37(3):314-323
Chemical reactions between Cu substrates and Zn-Al high-temperature solder alloys, Zn-4Al and Zn-4Al-1Cu (mass%), at temperatures
ranging from 420°C to 530°C were experimentally investigated by a scanning electron microscope using backscattered electrons
(SEM-BSE) and an electron probe microanalyzer (EPMA). Intermediate phases (IMPs), β(A2) or β′(B2), γ(D82), and ε(A3) phases formed and grew during the soldering and aging treatments. The consumption rate of the IMP for Cu substrates
is described by the square root of t in both the alloys, while the additional Cu in the molten Zn-Al alloy slightly suppresses the consumption of Cu substrates.
The growth of IMPs during soldering treatment is controlled by the volume diffusion of constituent elements, and its activation
energy increases in the order of Q
ε < Q
γ < Q
β. In view of the aging process, the growth of IMPs is considered to be controlled by the volume diffusion. In particular,
the layer thickness of γ rapidly grows over 200°C, although the thickness of the β layer grows very slowly. 相似文献